SOT-363 N-CHANNEL MOSFET Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3134KDW Dual N-Channel MOSFET SOT-363 FEATURE  Lead Free Product is Acquired  Surface Mount Package  N-Channel Switch with Low RDS on  Operated at Low Logic Level Gate Drive

A03 transistor

Abstract: marking A03 BSS84 MMBT4401
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

S2N7002DW

Abstract: MosFET
Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA     Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0

2n7002kdW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1 Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half.

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

MOSFET "MARKING CODE 7V"

Abstract: SOT-363 mosfet A495 5G12
Contextual Info: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.

Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

Dual N-Channel mosfet sot-363

Abstract: sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet
Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

k72 transistor

Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
Contextual Info: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN5L06DW

Abstract: DMN5L06DW-7
Contextual Info: DMN5L06DW NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-363 Very Low Gate Threshold Voltage Low Input Capacitance A Fast Switching Speed D2

Contextual Info: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW N channel+P Channel MOSFET FEATURE z Surface Mount Package z Low RDS on z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K

Si1501DL

Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363

STK1828

Abstract: SUF520J kst60
Contextual Info: SUF520J Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • Two STK1828 Chips in SOT-363 Package. Ordering Information

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

2N7002KDW

Abstract: 2N7002KD sot363 marking 31 Small Signal MOSFET
Contextual Info: 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits

Si1553DL

Contextual Info: Si1553DL New Product Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = –4.5 V "0.44 1.800 @ VGS = –2.5 V "0.32 SOT-363

Contextual Info: Si1553DL New Product Vishay Siliconix Complimentary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = –4.5 V "0.44 1.800 @ VGS = –2.5 V "0.32 SOT-363