SOT-89 MARKING CT Search Results

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

ic bsp 350

Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in

P025H

Abstract: STF817 STN817 n817
Contextual Info: STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type Marking STF817 817 STN817 N817 SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING • ■ 2 1 APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH

Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89

tm 1621

Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89

FJC690

Abstract: FJC790
Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T

Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T

marking E3 sot89

Abstract: my marking code sot 89 sot89 E3
Contextual Info: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

FJC690

Abstract: FJC790
Contextual Info: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T

qs marking sot-89

Abstract: QS 100 NPN Transistor FJC1308 FJC1963 SOT89 MARKING CODE B2 fairchild marking code
Contextual Info: FJC1963 NPN Epitaxial Silicon Transistor Features • • • • Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 1 9 6 3 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

EHP00

Abstract: marking 2P
Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings

Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBD1701

Abstract: MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 a1705 marking 05 SOT 89
Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

LRB751S-40T1

Abstract: SC-75 SOD3232
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751S-40T1 Features 1 Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar SC-79/SOD-523 Pb-Free Package is Available.

Contextual Info: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction