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    SOT106 Price and Stock

    Nexperia BC56-16PA-QX

    Bipolar Transistors - BJT BC56-16PA-Q/SOT1061/HUSON3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC56-16PA-QX Reel 27,000 3,000
    • 1 -
    • 10 -
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    • 10000 $0.079
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    Nexperia BC68-25PA-QX

    Bipolar Transistors - BJT BC68-25PA-Q/SOT1061/HUSON3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC68-25PA-QX Reel 27,000 3,000
    • 1 -
    • 10 -
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    • 10000 $0.083
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    Nexperia BC68PA-QX

    Bipolar Transistors - BJT BC68PA-Q/SOT1061/HUSON3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC68PA-QX Reel 27,000 3,000
    • 1 -
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    • 10000 $0.084
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    Nexperia PBSS5330PASX

    Bipolar Transistors - BJT PBSS5330PAS/SOT1061/HUSON3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PBSS5330PASX Reel 15,000 3,000
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    • 1000 -
    • 10000 $0.132
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    Nexperia BC56-10PA-QX

    Bipolar Transistors - BJT BC56-10PA-Q/SOT1061/HUSON3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC56-10PA-QX Reel 9,000 3,000
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    • 1000 -
    • 10000 $0.071
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    Find more SOT106 price and stock on Findchips.com

    SOT106 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SOT1061 NXP Semiconductors Footprint for reflow soldering SOT1061 Original PDF
    SOT1061 NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm Original PDF
    SOT1062-1 NXP Semiconductors Plastic low profile fine-pitch ball grid array package; 286 balls Original PDF
    SOT1063-1 NXP Semiconductors Plastic very thin fine-pitch ball grid array package; 48 balls Original PDF
    SOT1063-1 NXP Semiconductors Footprint for reflow soldering SOT1063-1 Original PDF
    SOT1064-1 NXP Semiconductors Footprint for reflow soldering SOT1064-1 Original PDF
    SOT1064-1 NXP Semiconductors Plastic low profile fine-pitch ball grid array package; 84 balls Original PDF
    SOT1065-1 NXP Semiconductors Plastic thin fine-pitch ball grid array package; 54 balls Original PDF
    SOT1065-1 NXP Semiconductors Footprint for reflow soldering SOT1065-1 Original PDF
    SOT1066-1 NXP Semiconductors Plastic thin fine-pitch ball grid array package; 54 balls Original PDF
    SOT1068-1 NXP Semiconductors Plastic thermal enhanced ultra thin quad flat package; no leads; 16 terminals; UTLP based; body 3 x 3 x 0.55 mm Original PDF
    SOT1069-1 NXP Semiconductors Plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 x 3 x 0.8 mm Original PDF
    SOT1069-2 NXP Semiconductors HWSON8: plastic thermal enhanced very very thin small outline package, no leads; 8 terminals; Original PDF
    SOT1069-2 NXP Semiconductors Footprint for reflow soldering SOT1069-2 Original PDF

    SOT106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for


    Original     		PDF DFN2020-3 OT1061) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PBSS4330PA 30 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4330PA OT1061 PBSS5330PA. PBSS4330PA

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: PBSS85 PBSS9410PA
    Text: PBSS9410PA 100 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS9410PA OT1061 PBSS8510PA. NXP SMD TRANSISTOR MARKING CODE PBSS85 PBSS9410PA

    PMEG2020EPA

    Abstract: No abstract text available
    Text: PMEG2020EPA 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small


    Original     		PDF PMEG2020EPA OT1061 AEC-Q101 PMEG2020EPA

    transistor smd marking AJ

    Abstract: smd code marking ID smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
    Text: PBSS5330PA 30 V, 3 A PNP low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5330PA OT1061 PBSS4330PA. PBSS5330PA transistor smd marking AJ smd code marking ID smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ

    smd code A9 3 pin transistor

    Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA. smd code A9 3 pin transistor smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA

    Untitled

    Abstract: No abstract text available
    Text: Package outline HUSON3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061 X A B v b B D A A A1 E terminal 1 index area detail X C terminal 1 index area y1 C e 1 y 2 L 6x e1 Eh 3 Dh 1 Dimensions


    Original     		PDF OT1061 sot1061

    Untitled

    Abstract: No abstract text available
    Text: Package outline VFBGA48: plastic very thin fine-pitch ball grid array package; 48 balls A B D SOT1063-1 ball A1 index area E A A2 A1 detail X e1 1/2 e e ∅v ∅w b H M M C C A B C y y1 C e G F E e2 D 1/2 e C B A ball A1 index area 1 2 3 4 5 6 7 8 X 2.5 5 mm


    Original     		PDF VFBGA48: OT1063-1 OT1063

    Untitled

    Abstract: No abstract text available
    Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA

    Untitled

    Abstract: No abstract text available
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4620PA OT1061 PBSS5620PA.

    Untitled

    Abstract: No abstract text available
    Text: PBSS4330PA 30 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4330PA OT1061 PBSS5330PA. PBSS4330PA

    Untitled

    Abstract: No abstract text available
    Text: PMEG2020EPA 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small


    Original     		PDF PMEG2020EPA OT1061 AEC-Q101 PMEG2020EPA

    p-channel mosfet with diode sot89

    Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
    Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of


    Original     		PDF OT1061 OT1118 OT1061) OT1118) ap6545UP PMFPB6532UP p-channel mosfet with diode sot89 PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA

    Untitled

    Abstract: No abstract text available
    Text: Package outline HWSON8: plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 x 3 x 0.75 mm SOT1069-2 X A B D A E A2 A1 A3 terminal 1 index area detail X e1 terminal 1 index area e 1 4 C C A B C v w b y y1 C L K E2 8


    Original     		PDF OT1069-2 MO-229 sot1069-2

    SmD TRANSISTOR a75

    Abstract: No abstract text available
    Text: PBSS5580PA 80 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5580PA OT1061 PBSS4580PA. SmD TRANSISTOR a75

    Untitled

    Abstract: No abstract text available
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA.

    Untitled

    Abstract: No abstract text available
    Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4612PA OT1061 PBSS5612PA.

    smd transistor marking A6

    Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4620PA OT1061 PBSS5620PA. smd transistor marking A6 TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE

    smd transistor marking a7

    Abstract: smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7
    Text: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4630PA OT1061 PBSS5630PA. smd transistor marking a7 smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7

    SOT1061

    Abstract: SOD323F footprint
    Text: NXP low VF MEGA Schottky rectifier PMEGxEPA in SOT1061 1 and 2 A Schottky rectifiers in leadless medium-power package These low VF (MEGA) Schottky rectifiers, the first to be housed in the leadless medium-power SOT1061 package, offer high forward current capability with low forward voltage. With integrated


    Original     		PDF OT1061 OT1061 AEC-Q101 sot1061 SOD323F footprint

    PBSS5620PA

    Abstract: No abstract text available
    Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA

    Untitled

    Abstract: No abstract text available
    Text: PBSS8510PA 100 V, 5.2 A NPN low VCEsat BISS transistor Rev. 1 — 17 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS8510PA OT1061 PBSS9410PA.

    Untitled

    Abstract: No abstract text available
    Text: NXP low VF Schottky rectifier single & dual in DFN2020-3 1 and 2 A Schottky rectifiers in leadless medium-power package These low VF Schottky rectifiers, the first to be housed in the leadless medium-power DFN2020-3 (SOT1061) package, offer high forward current capability with low forward


    Original     		PDF DFN2020-3 OT1061) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PBSS9410PA 100 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS9410PA OT1061 PBSS8510PA.