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    SOT122 Search Results

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    SOT122 Price and Stock

    Nexperia BUK6D385-100EX

    MOSFETs BUK6D385-100E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D385-100EX Reel 144,000 3,000
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    • 10000 $0.111
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    Nexperia PMPB23XNE,115

    MOSFETs SOT1220 N CHAN 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMPB23XNE,115 Reel 60,000 3,000
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    • 1000 -
    • 10000 $0.126
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    Nexperia BUK6D81-80EX

    MOSFETs BUK6D81-80E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D81-80EX Reel 33,000 3,000
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    • 1000 -
    • 10000 $0.11
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    Nexperia PMPB29XNE,115

    MOSFETs SOT1220 N CHAN 30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMPB29XNE,115 Reel 27,000 3,000
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    • 1000 -
    • 10000 $0.091
    		Buy Now

    Nexperia BUK9D23-40EX

    MOSFETs BUK9D23-40E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK9D23-40EX Reel 18,000 3,000
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    • 10000 $0.116
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    Find more SOT122 price and stock on Findchips.com

    SOT122 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT1220 NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Original PDF
    SOT1220_115 NXP Semiconductors DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 Original PDF
    SOT1220_125 NXP Semiconductors DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Original PDF
    SOT1221-1 NXP Semiconductors Plastic, heatsink small outline package; 6 leads(flat) Original PDF
    SOT1222-1 NXP Semiconductors Plastic, heatsink small outline package; 6 leads Original PDF
    SOT1223-1 NXP Semiconductors Plastic, heatsink small outline package; 4 leads(flat) Original PDF
    SOT1224-1 NXP Semiconductors Plastic, heatsink small outline package; 4 leads Original PDF
    SOT1225 NXP Semiconductors Plastic extremely thin small outline package; no leads; 8 terminals; body 1.6 x 1.2 x 0.4 mm Original PDF
    SOT1226 NXP Semiconductors Plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals Original PDF
    SOT1227A NXP Semiconductors Flanged ceramic package; 2 mounting holes; 2 leads Original PDF
    SOT1227B NXP Semiconductors Earless Flanged ceramic package; 2 leads Original PDF
    SOT1228A NXP Semiconductors Flanged LDMOST ceramic package; 2 mounting holes; 4 leads Original PDF
    SOT1229 NXP Semiconductors Footprint information for reflow soldering of DFN1212-6 package Original PDF
    SOT122D NXP Semiconductors studless ceramic package; 4 leads Original PDF
    SOT122E NXP Semiconductors studded ceramic package; 4 leads Original PDF
    SOT122F NXP Semiconductors studded ceramic package; 4 leads Original PDF

    SOT122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1212-6 package SOT1229 1.5 1.3 0.15 0.35 6x 0.15 0.3 0.25 (6x) 0.4 0.15 1.4 1.05 0.2 (6x) 0.84 0.94 1.04 0.4 0.35 (6x) solder lands 0.3 (6x) solder paste occupied area solder resist


    Original     		PDF DFN1212-6 OT1229 sot1229

    Untitled

    Abstract: No abstract text available
    Text: High PSRR LDOs Dual Channel LDOs with High PSRR Performance Package DFN1612-8 SOT1225 LD6935 Series Size (mm) 1.6 x 1.2 x 0.4 mm Ptot @ °C (mW) VIN (V) 600 Quiescent Output PSRR @ current noise typ 1 kHz (µA) * (µVrms) (dB) 1.75 5.5 30 50 80 IOUT (mA)


    Original     		PDF DFN1612-8 OT1225) LD6935 LD6935L/xxH LD6935L/xxP LD6935L/xxHD LD6935L/xxPD LD6935L/2826H LD6935L/2826P LD6935L/2828H

    Untitled

    Abstract: No abstract text available
    Text: Package outline HSOP4: plastic, heatsink small outline package; 4 leads SOT1224-1 B D A E X c y v HE A D1 D2 e 4 3 Q E2 E1 A A2 A3 A1 A4 pin 1 index θ Lp 1 2 b detail X w B 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A 3.9


    Original     		PDF OT1224-1 sot1224-1

    RF Wideband Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .


    Original     		PDF OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB85ENEA DFN2020MD-6 OT1220) AEC-Q101

    XB2B

    Abstract: philips 561 sot122e
    Text: PDF: 2001 Sep 03 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT122E D A Q c w1 M A M D1 N2 D2 A M N W N3 M1 X H detail X b2 b 4 C 3 H 1 b1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions


    Original     		PDF OT122E XB2B philips 561 sot122e

    SOT122D

    Abstract: c 129 transistor
    Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85


    Original     		PDF OT122D SOT122D c 129 transistor

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF NX2020P1 DFN2020MD-6 OT1220)

    BFR94A

    Abstract: No abstract text available
    Text: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.


    Original     		PDF BFR94A OT122E BFR94A BFH94. 45004B)

    Untitled

    Abstract: No abstract text available
    Text: Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85 5.58 0.15 0.10 7.50 7.23 7.24 6.99 27.43


    Original     		PDF OT122D

    Untitled

    Abstract: No abstract text available
    Text: Package outline HSOP6F: plastic, heatsink small outline package; 6 leads flat SOT1221-1 D E X c B D3 A E3 y v HE A D1 D2 e1 e3 e2 b1 (2x) b2 (2x) 6 5 4 w B w B 3 E2 E1 A A2 A1 pin 1 index Q1 detail X 2 b (2x) 1 w B e v mm max nom min A A1 3.9 0.2 0.1 A2 b


    Original     		PDF OT1221-1 sot1221-1

    Untitled

    Abstract: No abstract text available
    Text: Package outline Earless Flanged ceramic package; 2 leads SOT1227B D A F 3 U1 w1 A B D1 D c w1 A B 1 H E1 U2 E 2 A w2 b B Q w2 5 mm b c D D1 H Q U1 U2 max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.07 8.64 1.70 5.21 4.19 1.14 0.08 4.98 4.95 3.96 3.94 0.97


    Original     		PDF OT1227B sot1227b

    Untitled

    Abstract: No abstract text available
    Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB13XNE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    marking code 1f

    Abstract: NXP SMD mosfet MARKING CODE
    Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB12UN DFN2020MD-6 OT1220) marking code 1f NXP SMD mosfet MARKING CODE

    BFQ108

    Abstract: BFQ10 SOT122A 45005B
    Text: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use


    OCR Scan     		PDF BFQ108 711Gfl2b BFQ108 OT122A 45005B) BFQ10 SOT122A 45005B

    Untitled

    Abstract: No abstract text available
    Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.


    OCR Scan     		PDF bhS3T31 0031b53 BFQ68 OT122A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated


    OCR Scan     		PDF 0031b73 BFQ136 OT122A

    BFR94

    Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
    Text: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross


    OCR Scan     		PDF BFR94A OT122E BFR94A BFR94. BFR94 BS3C TRANSISTOR FQ BFR-94

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency


    OCR Scan     		PDF OT122A LEE1015T

    transistor 45 f 122

    Abstract: BFQ54 sot 122 philips bfq54
    Text: Philips Components BFQ54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _À_ _ _ _ _ PNP 4 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SOT122 package, prim arily intended fo r MATV and microwave amplifiers, such as radar systems, spectrum analysers etc.


    OCR Scan     		PDF bfq54 BFQ54 OT122 EiFQ34. IS21I2 1-IS11I2) 1-IS22I 45005B, transistor 45 f 122 sot 122 philips bfq54