SOT122 Search Results

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

BFQ108

Abstract: BFQ10 SOT122A 45005B
Contextual Info: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of DFN1212-6 package SOT1229 1.5 1.3 0.15 0.35 6x 0.15 0.3 0.25 (6x) 0.4 0.15 1.4 1.05 0.2 (6x) 0.84 0.94 1.04 0.4 0.35 (6x) solder lands 0.3 (6x) solder paste occupied area solder resist

Contextual Info: High PSRR LDOs Dual Channel LDOs with High PSRR Performance Package DFN1612-8 SOT1225 LD6935 Series Size (mm) 1.6 x 1.2 x 0.4 mm Ptot @ °C (mW) VIN (V) 600 Quiescent Output PSRR @ current noise typ 1 kHz (µA) * (µVrms) (dB) 1.75 5.5 30 50 80 IOUT (mA)

Contextual Info: Package outline HSOP4: plastic, heatsink small outline package; 4 leads SOT1224-1 B D A E X c y v HE A D1 D2 e 4 3 Q E2 E1 A A2 A3 A1 A4 pin 1 index θ Lp 1 2 b detail X w B 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A 3.9

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

Contextual Info: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated

BFR94

Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Contextual Info: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency

XB2B

Abstract: philips 561 sot122e
Contextual Info: PDF: 2001 Sep 03 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT122E D A Q c w1 M A M D1 N2 D2 A M N W N3 M1 X H detail X b2 b 4 C 3 H 1 b1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

SOT122D

Abstract: c 129 transistor
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85

Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

BFR94A

Contextual Info: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.

Contextual Info: Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85 5.58 0.15 0.10 7.50 7.23 7.24 6.99 27.43

Contextual Info: Package outline HSOP6F: plastic, heatsink small outline package; 6 leads flat SOT1221-1 D E X c B D3 A E3 y v HE A D1 D2 e1 e3 e2 b1 (2x) b2 (2x) 6 5 4 w B w B 3 E2 E1 A A2 A1 pin 1 index Q1 detail X 2 b (2x) 1 w B e v mm max nom min A A1 3.9 0.2 0.1 A2 b

Contextual Info: 0'  SOT1220 ' 1   DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the

Contextual Info: Package outline Earless Flanged ceramic package; 2 leads SOT1227B D A F 3 U1 w1 A B D1 D c w1 A B 1 H E1 U2 E 2 A w2 b B Q w2 5 mm b c D D1 H Q U1 U2 max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.07 8.64 1.70 5.21 4.19 1.14 0.08 4.98 4.95 3.96 3.94 0.97

Contextual Info: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

transistor 45 f 122

Abstract: BFQ54 sot 122 philips bfq54
Contextual Info: Philips Components BFQ54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _À_ _ _ _ _ PNP 4 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SOT122 package, prim arily intended fo r MATV and microwave amplifiers, such as radar systems, spectrum analysers etc.

marking code 1f

Abstract: NXP SMD mosfet MARKING CODE
Contextual Info: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using