SOT143 DUAL DIODE Search Results

Contextual Info: Short-form product specification Philips Semiconductors BF990A Silicon N-channel dual-gate MOS-FET APPLICATIONS • UHF applications such as television tuners with 12 V supply voltage, and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143

Contextual Info: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.

mosfet marking code gg

Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

Contextual Info: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and

Contextual Info: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.

Contextual Info: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.

Contextual Info: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

marking code 11G1

Contextual Info: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.

marking code 11G1

Contextual Info: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V

BF991

Abstract: G2S-50
Contextual Info: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

BF994S

Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
Contextual Info: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.

fet dual gate sot143

Abstract: BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor
Contextual Info: BF990A P H I L IPS INTERNATIONAL_ SbE D Bi 7110flSti 0034070 5T7 M P H I N FOR D E TA ILE D INFO R M A TIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T-35-Z 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and

FM02

Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
Contextual Info: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and

Zener Diode 4148

Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80

SBMT2222A

Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
Contextual Info: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

BB219

Abstract: sod80 diodes color code SOD-80 COLOR MARKING smd glass diode color codes marking KL sot-23 sot-23 pinout DIODE COLOR BAND MARKING CODES BBY39 PHILIPS DIODE COLOR BAND MARKING marking 25 SOT-23 power
Contextual Info: VARIABLE CAPACITANCE SMD DIODES DESCRIPTION • Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated range of reverse voltage values. The devices also have very low

1N4937 SMD

Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series

smd diode schottky code marking 2U

Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Contextual Info: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/

s1P SOT23

Abstract: BBY39 S2p SOT-23 SOD-23 BB219 Diode SM 48 smd code BBY31 175 sot-23 XL SOT23 am SMD sot23
Contextual Info: Variable Capacitance SM D’ Diodes Variable Capacitance SMD Diodes Description Mechanical Data Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated

1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode

DIODE smd marking A7p

Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Contextual Info: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur­

1N4148 SOD-80

Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
Contextual Info: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23