SOT2 Search Results

zhcs1006ta

Abstract: zhcs1006
Contextual Info: SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 ZHCS1006 ✪ FEATURES: • High current capability • Low V F APPLICATIONS: • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion PARTMARKING DETAILS : S16 1 C 2 1

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

LM5112MY

Abstract: LM5112
Contextual Info: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

R-PDSO-G8 Package land pattern

Contextual Info: OPA OPA 347 OPA OPA 347 347 OPA OPA347 OPA2347 OPA4347 434 234 7 7 SBOS167C – NOVEMBER 2000– REVISED JUNE 2003 microPower, Rail-to-Rail Operational Amplifiers FEATURES DESCRIPTION ● LOW IQ: 20µA ● microSIZE PACKAGES: WCSP-8, SC70-5 SOT23-5, SOT23-8, and TSSOP-14

C2162PX2

Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Contextual Info: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply

Contextual Info: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT23 2.2 1.2 2x 1.4 (2×) 4.6 2.6 preferred transport direction during soldering 1.4 solder land 2.8 solder resist 4.5 occupied area www.nxp.com

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

PMV213SN

Abstract: PMV213
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

Contextual Info: PRN105 SOT23 Thin Film Precision Voltage Divider Network Features Applications • Wide resistance range 10 to 1MΩ • Precision voltage dividers • Tolerance ±0.1%, ratios ±0.05% • OP AMP gain control • Low temperature coefficient ±25ppm/°C • Attenuation

Contextual Info: CMV7106 CALIFORNIA MICRO DEVICES CMV7106 Low Power, Low Voltage OPAMP with RRIO and Shutdown, SOT23-6 Features • Tiny SOT23-6 Package • Guaranteed specs at 2.2V and 3V • Very Low Supply current, typically 300µA operating, Less than 1µA idle . • Rail-to-Rail Input and Output (RRIO)

FMMT493ATA

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

dl46

Abstract: china DVD player card circuit diagram SOT23-6L Marking Code dl46
Contextual Info: DVIULC6-4SC6 Ultralow capacitance ESD protection Features • 4-line ESD protection IEC 61000-4-2 ■ Protects VBUS when applicable ■ Ultralow capacitance: 0.6 pF at 825 MHz ■ Fast response time compared with varistors ■ SOT23-6L package ■ RoHS compliant

UL46

Abstract: marking UL46 552p
Contextual Info: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ Very low capacitance between lines to GND for optimized data integrity and speed

sot023

Contextual Info: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to

pesd1can4

Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Contextual Info: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206GV ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS on = 1Ω * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

TS3011

Abstract: k540 TS301
Contextual Info: TS3011 Rail-to-rail high-speed comparator Features TS3011 SOT23-5 / SC70-5 • Propagation delay: 8 ns ■ Low current consumption: 470 A typ at 5 V ■ Rail-to-rail inputs ■ Push-pull outputs ■ Supply operation from 2.2 to 5 V ■ Wide temperature range: -40°C to +125°C

ISO-7637-3

Abstract: ISO7637-3 SOT23-6L Marking Code NA SOT23 USBLC6-2SC6Y MO-178AB
Contextual Info: USBLC6-2SC6Y Automotive very low capacitance ESD protection Datasheet − production data Features • 2 data lines protection ■ Protects VBUS ■ Very low capacitance: 2.5 pF ■ Very low leakage current: 10 nA ■ SOT23-6L packages ■ RoHS compliant ■

Contextual Info: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

REF3020 equivalent

Abstract: sot-23 R30c R30A REF3012 REF3012AIDBZR REF3012AIDBZT REF3020 REF3025 REF3030 REF3033
Contextual Info: REF3012 REF3020 REF3025 REF3030 REF3033 REF3040 SBVS032F – MARCH 2002 – REVISED AUGUST 2008 www.ti.com 50ppm/°C Max, 50µA in SOT23-3 CMOS VOLTAGE REFERENCE FEATURES DESCRIPTION ● MicroSIZE PACKAGE: SOT23-3 The REF30xx is a precision, low power, low voltage dropout

5C SOT23-6

Contextual Info: REF3212-EP, REF3220-EP, REF3225-EP REF3230-EP, REF3233-EP, REF3240-EP SBVS078B – OCTOBER 2006 – REVISED AUGUST 2011 www.ti.com 4 ppm/°C, 100 A SOT23-6 SERIES VOLTAGE REFERENCES Check for Samples: REF3212-EP, REF3220-EP, REF3225-EP, REF3230-EP, REF3233-EP, REF3240-EP

L30ESD5V0C3-2

Abstract: L30ESD5V0C3
Contextual Info: L30ESD5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESD5V0C3 is a dual voltage suppressor designed to protect components which are connected to data and transmission lines against Electro Static Discharge ESD ,