Hall TLE 4905
Abstract: EW-460 hall sot223 asahi EW-410 tle4905 TLE4905G EW-400 EW-450 EW-510
Text: Cross reference list Hall IC switches Asahi Part No. Asahi Type Package EW 400 EW 410 EW 450 EW 460 EW 500 EW 510 EW 550 EW 560 Latch Latch Switch Switch Latch Latch Switch Switch SOT223 like SOT223 like SOT223 like SOT223 like P-SSO-3 like P-SSO-3 like P-SSO-3 like
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OT223
Hall TLE 4905
EW-460
hall sot223
asahi
EW-410
tle4905
TLE4905G
EW-400
EW-450
EW-510
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PZT2907
Abstract: No abstract text available
Text: 1.5W SOT223 BIPOLAR TRANSISTORS HIGH POWER TRANSISTORS SOT223 PACKAGE The latest comprehensive data to fully support these parts is readily available. SOT223 6.5 0°-7° 1.6 3.0 7.0 max 3.5 B C E 2.3 0.7 15° 15° 0.65 0.32 max 4.6 4.6 2.0 min 6.3 2.3 1.5 min
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OT223
BCP54
BCP55
PZT2907
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Untitled
Abstract: No abstract text available
Text: FAX# 408 944-0970 TITLE 3 LEAD SOT223 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # SOT223-3LD-PL-1 Rev A ECN 013112HC08 Originator S. YEH Change New release UNIT MM Reason New
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OT223
OT223-3LD-PL-1
013112HC08
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MCR08BT1
Abstract: 3SOT-223 SC-73
Text: MCR08BT1 Thyristor; logic level Rev. 03 — 29 November 2004 Product data sheet SOT223 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features • Sensitive gate ■ Surface mount package. 1.3 Applications
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MCR08BT1
OT223
OT223
sym037
MCR08BT1
3SOT-223
SC-73
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design ideas
Abstract: TS16949 ZXTN5551G ZXTP5401G
Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package
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ZXTP5401G
OT223,
-150V
-600mA
ZXTN5551G
OT223
ZXTP5401GTC
ZXTP5401GTA
D-81541
design ideas
TS16949
ZXTN5551G
ZXTP5401G
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Untitled
Abstract: No abstract text available
Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package
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ZXTP5401G
OT223,
-150V
-600mA
ZXTN5551G
OT223
ZXTP5401GTA
ZXTP5401GTC
D-81541
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zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
522-ZXTP2008GTA
ZXTP2008GTA
zxtP
Bv 42 transistor
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sot223 device Marking
Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
sot223 device Marking
transistor 355
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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ZXTP19100CG
Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP19100CG
OT223
-100V
-130mV
ZXTN19100CG
OT223
ZXTP19100CGTA
D-81541
ZXTP19100CG
ZXTP19100C
TS16949
ZXTN19100CG
ZXTP19100CGTA
30W dc motor current driver
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ZXTP25 20V 6A
Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP25020DG
OT223
-65mV
ZXTN25020DG
OT223
ZXTP25020DGTA
D-81541
ZXTP25 20V 6A
ZXTP25020DG
ZXTN25020DG
TS16949
ZXTP25020DGTA
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MCR08BT1
Abstract: No abstract text available
Text: SO T2 23 MCR08BT1 Thyristor; logic level Rev. 4 — 2 November 2011 Product data sheet SOT223 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features and benefits Sensitive gate Surface mount package.
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MCR08BT1
OT223
OT223
sym037
SC-73)
MCR08BT1
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X5T949
Abstract: sot223 transistor pinout ZX5T949G
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T949G
OT223
OT223
ZX5T949GTA
X5T949
sot223 transistor pinout
ZX5T949G
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ZXTP19060CG
Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP19060CG
OT223
-80mV
ZXTN19060CG
OT223
ZXTP19060CGTA
D-81541
ZXTP19060CG
TS16949
ZXTN19060CG
ZXTP19060CGTA
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ZXTN2005G
Abstract: ZXTN2005GTA ZXTN2005GTC
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
ZXTN2005G
ZXTN2005GTA
ZXTN2005GTC
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sot223 transistor pinout
Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
sot223 transistor pinout
sot223 device Marking
ZXTP2008G
ZXTP2008GTA
ZXTP2008GTC
zxtP
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zxtn
Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
R26100
zxtn
sot223 device Marking
ZXTN2005GTC
ZXTN2005G
ZXTN2005GTA
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X5T955
Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
"PNP Transistor"
ZX5T955G
ZX5T955GTA
ZX5T955GTC
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ZXTN25020DG
Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
ZXTN25020DG
TS16949
ZXTN25020DGTA
ZXTP25020DG
ON950
ZXTN25
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zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
ZXTP2014GTA
ZXTP2014GTC
zxtP
ZXTP2014G
ZXTP2014GTA
ZXTP2014GTC
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marking 8A sot223
Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
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FZT717
OT223
FZT717TA
marking 8A sot223
sot223 transistor pinout
transistor pnp 12V 1A Continuous Current Peak
FZT717
FZT717TA
12v pnp transistor
zetex 320
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X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
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T0263
Abstract: Cyrix 486 dx2 cyrix DX2 12v 30A regulator Cyrix 486 processor amd k5 12v 10A regulator cyrix cx486dx T0-220 CX486DX2
Text: [MíñilG=§[¡=D 5V to 3V Conversion Solutions Quick Reference Guide TEL: 805-498-2111 FAX: 805-498-3804 Application Package Solution Description ASIC & other low voltage circuits T0220, SOT223, T092 T0220, SOT223 T092, SOT223 T0220, SOT223, T092 T0220, SOT223
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Am486®
Cx486DX/DX2
EZ55Z3L
EZ1086
EZ1085
250mA
T0263
Cyrix 486 dx2
cyrix DX2
12v 30A regulator
Cyrix 486
processor amd k5
12v 10A regulator
cyrix cx486dx
T0-220
CX486DX2
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN power transistor BDP31 FEATURES • SOT223 package. DESCRIPTION NPN power transistor in a plastic SOT223 package for general purpose, medium power applications. PNP complement is BDP32. PINNING - SOT223 PIN
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OT223
BDP32.
BDP31
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56359B
Abstract: No abstract text available
Text: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms
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OT223
OT186;
OT263;
T0220AB
OT223
OT223)
56359B
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