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    SOT23 MARKING 8FB Search Results

    SOT23 MARKING 8FB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING 8FB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8FC SOT23

    Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		PDF BC817/BC818 BC817/BC818 BC807/ BC808 OT-23 BC817 BC818 BC817 8FC SOT23 TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23

    HBC817

    Abstract: hbc8
    Text: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6831 HBC817 HBC817 OT-23 183oC 217oC 260oC 10sec hbc8

    8FC SOT23

    Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		PDF BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 8FC SOT23 BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF

    transistor 8gb sot 23

    Abstract: No abstract text available
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		PDF BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 transistor 8gb sot 23

    marking 8FC

    Abstract: No abstract text available
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC817/BC818 BC807/BC808 OT-23 BC817 BC818 OT-23 marking 8FC

    HBC817

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6831 HBC817 HBC817 OT-23

    BC817

    Abstract: BC818
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818

    BC817

    Abstract: BC818 8FC SOT23
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 8FC SOT23

    BC817

    Abstract: BC818 marking code fairchild marking 8FC
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 marking code fairchild marking 8FC

    8FC SOT23

    Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817


    Original     		PDF BC817/BC818 OT-23 BC807/BC808 BC817 BC818 100mA 8FC SOT23 marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB

    Bc817 sot-23

    Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
    Text: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		PDF KC817 BC817) OT-23 Jun10 300mA KC817-16 KC817-25 KC817-40 Bc817 sot-23 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain.


    Original     		PDF KC817 BC817) OT-23 300mA KC817-16 KC817-25 KC817-40

    8fc marking code

    Abstract: BC817 BC818 marking 8FC
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Emitter Voltage : BC817


    Original     		PDF BC817/BC818 OT-23 BC807/BC808 BC817 BC818 8fc marking code BC817 BC818 marking 8FC

    SOT23 MARKING CODE 8G

    Abstract: 8FC SOT23 marking 8fb sot23 marking 8fc
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRAN SISTO R SOT-23 SW ITCHING AND AM PLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808 A BSO LU TE MAXIMUM RATINGS Ta =25TC Characteristic Symbol Collector Emitter Voltage :BC817


    OCR Scan     		PDF BC817/BC818 OT-23 BC807/BC808 BC817 BC818 SOT23 MARKING CODE 8G 8FC SOT23 marking 8fb sot23 marking 8fc