SOT23 REVERSE VOLTAGE 600V Search Results

mcr100-6 sot-23

Abstract: mcr100g mcr100-6 sot23 MCR100L MCR100-8 SOT89 MCR100 MCR100-6 SCR 400 V 0,8 A MCR100G-6-x-T92-B marking a2s sot-23 sot89 scr
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

mcr100-6 sot-23

Abstract: mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

Thyristors

Abstract: MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

Mcr100

Abstract: mcr100-6 sot-23 MCR100-6 SCR 400 V 0,8 A scr mcr100-6 mcr100-6 sot23
Contextual Info: UNISONICTECHNOLOGIESCO., LTD MCR100 SCR SEN SI T I V E GAT E SI LI CON CON T ROLLED RECT I FI ERS REV ERSE BLOCK I N G T H Y RI ST ORS ̈ 3 2 1 SOT-89 1 TO-92 FEAT U RES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

DIODES K29

Contextual Info: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

Contextual Info: Advanced Power Electronics Corp. AP2332GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Small Package Outline Surface Mount Device G RoHS-compliant, Halogen-free 600V R DS ON 300Ω ID 27mA S Description D Advanced Power MOSFETs from APEC provide the designer with the best

BSS127

Abstract: marking D09 BSS127S
Contextual Info: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)

BSS127S

Contextual Info: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V 160 Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: SMS501DE 0.03A , 600V , RDS ON 700Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOT-23 DESCRIPTION The SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.

Contextual Info: AP2332GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device S ▼ Halogen Free & RoHS Compliant Product SOT-23 BVDSS 600V RDS ON

Contextual Info: AP2332GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Small Package Outline Surface Mount Device S Halogen Free & RoHS Compliant Product SOT-23 BVDSS 600V RDS ON 300 ID 27mA G

MCR100L

Abstract: mcr100-4
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS  3 2 1 SOT-223 SOT-23 DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 2 1 SOT-23 DESCRIPTION TO-92 1 PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,

512-1N4750A

Abstract: 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187
Contextual Info: ZENER DIODES CONT. For quantities greater than listed, call for quote. For quantities greater than listed, call for quote. MOUSER STOCK NO. Mfr. Mfr. Part No. 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 Package

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS127 Power MOSFET 0.021A, 600V SMALL-SIGNAL-TRANSISTOR  DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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power BJT DARLINGTON PAIR NPN

Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V

reverse phase dimmer

Abstract: of bel 187 transistor 120 volt dimmer circuit with triac bel 187 NPN TRANSISTOR detailed pinout of bel 187 transistor 220 volt dimmer circuit CREE Q5 Q8 LED Triac AC INRUSH CURRENT LIMITER 220 pwm dimmer SCHEMATIC dimmer 220 volts
Contextual Info: National Semiconductor Application Note 1995 Tim Sullivan October 23, 2009 Introduction A supplied bill of materials describes the parts used on this demonstration board. A schematic and layout have also been included along with measured performance characteristics.