SOT23-3 FOOTPRINT Search Results
SOT23-3 FOOTPRINT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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SOT23-3 FOOTPRINT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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apr 3600Contextual Info: REF3012 REF3020 REF3025 REF3030 REF3033 REF3040 SBVS032E – MARCH 2002 – REVISED MARCH 2004 50ppm/°C Max, 50µA in SOT23-3 CMOS VOLTAGE REFERENCE FEATURES DESCRIPTION ● MicroSIZE PACKAGE: SOT23-3 The REF30xx is a precision, low power, low voltage dropout |
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REF3012 REF3020 REF3025 REF3030 REF3033 REF3040 SBVS032E 50ppm/ OT23-3 apr 3600 | |
Contextual Info: MAX6330/MAX6331 Precision Shunt Regulators with Reset in SOT23-3 General Description The MAX6330/MAX6331 combine a precision shunt regulator with a power-on reset function in a single SOT23-3 package. They offer a low-cost method of operating small microprocessor µP -based systems from high-voltage |
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MAX6330/MAX6331 OT23-3 MAX6330/MAX6331 MAX6330) MAX6331) | |
SOT23-8 LAND PATTERN
Abstract: regulator sot23-8 U3 SOT23-8
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MAX6006 MAX6009 30ppm/ ICL8069, LM385, LT1004, SOT23-8 LAND PATTERN regulator sot23-8 U3 SOT23-8 | |
UL46Contextual Info: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ ■ Very low capacitance between lines to GND for |
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OT23-6L OT23-6L UL46 | |
MAX5360NEUKContextual Info: 19-1785; Rev 2; 3/11 Low-Cost, Low-Power 6-Bit DACs with 2-Wire Serial Interface in SOT23 Package Features The MAX5360/MAX5361/MAX5362 are low-cost, 6-bit digital-to-analog converters DACs in miniature 5-pin SOT23 packages with a simple 2-wire serial interface |
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MAX5360/MAX5361/MAX5362 MAX5360 MAX5361 MAX5362 MAX5360/MAX5361/MAX5362 MAX5360NEUK | |
UL46
Abstract: marking UL46 552p
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OT23-6L OT23-6L UL46 marking UL46 552p | |
diac trigger diode 30v
Abstract: bidirectional diode thyristor diac DIODE B31 triac sot23
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IDB31 IDB31 150mW OT-23 178mm 330mm diac trigger diode 30v bidirectional diode thyristor diac DIODE B31 triac sot23 | |
Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 3 leads SOT23 3.3 2.9 1.9 3 0.6 3x 0.7 (3×) solder land solder paste deposit 0.5 (3×) solder land plus solder paste 0.6 (3×) solder resist 1 occupied area |
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sot023 | |
MAX5360NEUK
Abstract: MAX5360 MAX5360LEUK MAX5360MEUK MAX5360PEUK MAX5361 MAX5361LEUK MAX5361MEUK MAX5362
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MAX5360/MAX5361/MAX5362 MAX5360 MAX5361 MAX5362 400kbps, MAX5360/MAX5361/MAX5362 MAX5360NEUK MAX5360LEUK MAX5360MEUK MAX5360PEUK MAX5361LEUK MAX5361MEUK | |
Contextual Info: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L |
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OT23-6L OT23-6L DocID023012 | |
STT6N3LLH6
Abstract: DIODE marking A2 stt6n3
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OT23-6L OT23-6L STT6N3LLH6 DIODE marking A2 stt6n3 | |
Contextual Info: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT23 2.2 1.2 2x 1.4 (2×) 4.6 2.6 preferred transport direction during soldering 1.4 solder land 2.8 solder resist 4.5 occupied area www.nxp.com |
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sot023 | |
Contextual Info: 19-2770; Rev 3; 3/11 20Mbps, +3.3V, SOT23 RS-485/ RS-422 Transmitters The MAX3293/MAX3294/MAX3295 low-power, highspeed transmitters for RS-485/RS-422 communication operate from a single +3.3V power supply. These devices contain one differential transmitter. The |
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20Mbps, RS-485/ RS-422 MAX3293/MAX3294/MAX3295 RS-485/RS-422 MAX3295 MAX3293 250kbps) MAX3294 | |
Contextual Info: SO T2 3 PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
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PMV37EN2 O-236AB) | |
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abvj
Abstract: MAX3295 MAX3293 MAX3293AUT MAX3294 MAX3294AUT MAX3293AUT-T MAX3284
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20Mbps, RS-485/ RS-422 MAX3293/MAX3294/MAX3295 RS-485/RS-422 MAX3295 MAX3293 250kbps) MAX3294 abvj MAX3293 MAX3293AUT MAX3294 MAX3294AUT MAX3293AUT-T MAX3284 | |
Contextual Info: 19-2300; Rev 3; 3/12 Ultra-High-Precision SOT23 Series Voltage Reference The MAX6033 ultra-high-precision series voltage reference features a low 7ppm/°C max temperature coefficient and a low dropout voltage (200mV, max). Low temperature drift and low noise make the MAX6033 |
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MAX6033 200mV, MAX6033 | |
A4v SOT23
Abstract: EL2170C EL2176C EL2180C EL2186C EL2280C EL2286C EL2386C EL2480C L3 SOT23-5
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EL2180C) EL2280C) EL2480C) OT23-5 EL2186C) EL2286C) A4v SOT23 EL2170C EL2176C EL2180C EL2186C EL2280C EL2286C EL2386C EL2480C L3 SOT23-5 | |
placeholder for manufacturing site codeContextual Info: SO T2 3 BAT754 series Schottky barrier diodes Rev. 3 — 9 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic |
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BAT754 O-236AB) AEC-Q101 placeholder for manufacturing site code | |
Contextual Info: SOT23-3 Voltage Regulator Evaluation Board User’s Guide 2008 Microchip Technology Inc. DS51785A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. |
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OT23-3 DS51785A DS51785A-page | |
SAs SOT23
Abstract: BSS123 E6327 Q62702-S512 Q67000-S245 sas sot23-3 bss123 infineon sot23
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BSS123 VPS05161 Q62702-S512 E6327: Q67000-S245 E6433: SAs SOT23 BSS123 E6327 Q62702-S512 Q67000-S245 sas sot23-3 bss123 infineon sot23 | |
Contextual Info: Package information - SOT23 Surface mounted, 3 pin package Package outline E e e1 b 3 leads L1 D E1 A L A1 Dim. c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 |
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Contextual Info: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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PMV20XNE O-236AB) | |
SOt23-3 footprint wave soldering
Abstract: MARKING TR SOT23-3 P MOSFET
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PMV185XN O-236AB) SOt23-3 footprint wave soldering MARKING TR SOT23-3 P MOSFET | |
Contextual Info: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 8 August 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
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NX7002BK O-236AB) |