VM MARKING CODE SOT23-5
Abstract: NET50 NET153
Text: sig n TSM105 • ■ ■ ■ ORDER CODE Part Number Package Temperature Range TSM105CLT TSM105CD Marking L D • 0 to 85°C 0 to 85°C • M105 TSM105 L = Tiny Package SOT23-5 - only available in Tape & Reel (LT) D = Small Outline Package (SO) - also available in Tape & Reel (DT)
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TSM105CLT
TSM105CD
TSM105
VM MARKING CODE SOT23-5
NET50
NET153
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XC62K
Abstract: MARKING X4 SOT23 XC62KN5002
Text: XC62K Series ETR0313_001 Negative Voltage Regulators •GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative voltage regulators, manufactured using CMOS and laser trimming technologies. The series achieves high output currents with small input-output voltage differentials, and
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XC62K
ETR0313
OT-23
150mW)
OT-89
500mW)
100mW)
300mW)
38V100mA
MARKING X4 SOT23
XC62KN5002
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Untitled
Abstract: No abstract text available
Text: XC62K Series ETR0313_002 Negative Voltage Regulators •GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative voltage regulators, manufactured using CMOS and laser trimming technologies. The series achieves high output currents with small input-output voltage differentials, and
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XC62K
ETR0313
OT-23
150mW)
OT-89
500mW)
100mW)
300mW)
38V100mA
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Untitled
Abstract: No abstract text available
Text: XC62K Series ETR0313_001 Negative Voltage Regulators •GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative voltage regulators, manufactured using CMOS and laser trimming technologies. The series achieves high output currents with small input-output voltage differentials, and
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XC62K
ETR0313
OT-23
150mW)
OT-89
500mW)
100mW)
300mW)
38V100mA
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Voltage Detector SOT-89 marking
Abstract: SC82AB ELM7530CBA-S iss 196 SC-82AB ELM7540NBA ELM7522CCA ELM7524CAA ELM7535CAA ELM7522CAA
Text: ELM75xxxxA VOLTAGE DETECTOR • GENERAL DESCRIPTION ELM 75xxxxA Series is improved CMOS voltage detector ICs available in very small package SC82AB.Compared to ELM97xxxxA Series, lower current consumption TYP.0.6 A VDD=4.5V and higher accuracy ( ± 2.0%) of detection voltage are achieved. It consists of a very low-power-consumption reference voltage source, a hysteresis comparator, an output driver, and detection voltage setting resistors.
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ELM75xxxxA
75xxxxA
SC82AB
ELM97xxxxA
ELM7522xxA,
ELM7524xxA
ELM7527xxA,
ELM7530xxA,
ELM7535xxA,
Voltage Detector SOT-89 marking
ELM7530CBA-S
iss 196
SC-82AB
ELM7540NBA
ELM7522CCA
ELM7524CAA
ELM7535CAA
ELM7522CAA
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XC62K
Abstract: E5 sot89
Text: XC62K Series ETR0313_006 Negative Voltage Regulators •GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative voltage regulators, manufactured using CMOS and laser trimming technologies. The series achieves high output currents with small input-output voltage differentials, and
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XC62K
ETR0313
OT-23
150mW)
OT-89
500mW)
100mW)
300mW)
100mA
E5 sot89
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XC62K
Abstract: XC62KN5002 sot-89 MARK n c
Text: XC62K Series ETR0313_004 Negative Voltage Regulators •GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative voltage regulators, manufactured using CMOS and laser trimming technologies. The series achieves high output currents with small input-output voltage differentials, and
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XC62K
ETR0313
OT-23
150mW)
OT-89
500mW)
100mW)
300mW)
38V100mA
XC62KN5002
sot-89 MARK n c
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IRLMS6803
Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance
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IRLMS1503PbF
leadframe01
EIA-481
EIA-541.
IRLMS6803
IRLMS1902
IRLMS2002
IRLMS4502
IRLMS5703
IRLMS6702
58AV
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IRLMS6803
Abstract: EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet
Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
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IRLMS1902PbF
EIA-481
EIA-541.
IRLMS6803
EIA-541
IRLMS1503
IRLMS2002
mosfet 4502
5703 mosfet
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in
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A8800
Abstract: AME88004EET
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006/2095-DS8800/8811-R
A8800
AME88004EET
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a8800
Abstract: AME8800CEFTZ
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006-DS8800/8811-P
a8800
AME8800CEFTZ
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Untitled
Abstract: No abstract text available
Text: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small
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BAV99
BAV99
OT-23
BAV70
BAW56.
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2815 voltage regulator
Abstract: 805 SOT-89 YB1230 voltage regulator with current limiter with mosfet voltage regulator 2805 transistor wireless sensor circuit diagram
Text: YB1230 – 600mA Low-Noise LDO Regulator Description Features The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are
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YB1230
600mA
YB1230
500mV
600mA
2815 voltage regulator
805 SOT-89
voltage regulator with current limiter with mosfet
voltage regulator 2805
transistor wireless sensor circuit diagram
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YB1231
Abstract: RF transistor marking IN SOT-89
Text: YB1231 – HV600mA Low-Noise LDO Regulator Description Features The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are
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YB1231
HV600mA
YB1231
440mV
600mA
RF transistor marking IN SOT-89
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YB1210R
Abstract: RF transistor marking IN SOT-89
Text: YB1210R 300mA, Ultra-Low-Noise, High PSRR LDO Regulator Features Description The YB1210R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1210R regulators achieve a low 320mV dropout at 300mA load current of 3.3V
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YB1210R
300mA,
YB1210R
320mV
300mA
RF transistor marking IN SOT-89
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a8800
Abstract: No abstract text available
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006/2095-DS8800/8811-T
a8800
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a8800
Abstract: a8811 a8811 sot-89 TRANSISTOR a8800 marking codes transistors a1 sot-89 RE SOT AME8811SEATZ A8800 AEFww AME8811SEFTZ transistor t 04 27
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006/2095-DS8800/8811-T
a8800
a8811
a8811 sot-89
TRANSISTOR a8800
marking codes transistors a1 sot-89
RE SOT
AME8811SEATZ
A8800 AEFww
AME8811SEFTZ
transistor t 04 27
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a8800
Abstract: a8811 TRANSISTOR a8800 TRANSISTOR T-03 A8800 AEFww a8811 sot-89 AME8800CEFTZ SOT89 a8800 AME8800AEETL AME88004EET
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006/2095-DS8800/8811-T
a8800
a8811
TRANSISTOR a8800
TRANSISTOR T-03
A8800 AEFww
a8811 sot-89
AME8800CEFTZ
SOT89 a8800
AME8800AEETL
AME88004EET
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YB1230
Abstract: RF transistor marking IN SOT-89 thermal sensor internal block diagram
Text: YB1230 600mA, Low-Noise LDO Regulator Description The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are
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YB1230
600mA,
YB1230
500mV
600mA
RF transistor marking IN SOT-89
thermal sensor internal block diagram
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A8800
Abstract: AME8800AEF
Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006/2095-DS8800/8811-S
A8800
AME8800AEF
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YB1231
Abstract: voltage regulator with current limiter with mosfet
Text: YB1231 HV600mA, Low-Noise LDO Regulator Description The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are
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YB1231
HV600mA,
YB1231
440mV
600mA
voltage regulator with current limiter with mosfet
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMP1320 Series: Low Resistance, Low Capacitance, Plastic Packaged PIN Diodes Applications • High-volume wireless applications Features • Resistance: 0.9 Ω • Capacitance: 0.3 pF • Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description
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SMP1320
J-STD-020)
200047J
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MARKING PM3
Abstract: sot-23 Pm9 SMP1321-005LF
Text: DATA SHEET SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes Applications • High-performance wireless switches Features • Capacitance: 0.18 pF typical @ 30 V • Series resistance: 1.05 Ω typical @ 10 mA • Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMP1321
J-STD-020
200048N
MARKING PM3
sot-23 Pm9
SMP1321-005LF
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