SOT363 ON MARKING DS Search Results

Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

k72 diode

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description

Contextual Info: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the

diode K72

Abstract: K72 marking diode k72 diode
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance

Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching

Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching

Contextual Info: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA • Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed Description

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

marking 32 SOT-363

Abstract: sot-363 Marking G1 NTJD4001NT1G marking 82 sot363 MARKING TE SOT363 419B-02 NTJD4001N NTJD4001NT1 NTJD4001NT2G TE SC88
Contextual Info: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N-Channel, SC-88 Features •ăLow Gate Charge for Fast Switching •ăSmall Footprint - 30% Smaller than TSOP-6 •ăESD Protected Gate •ăPb-Free Package is Available V BR DSS RDS(on) TYP ID Max 1.0 W @ 4.0 V

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5 @ VGS = 10V 10 @ VGS = -5V ID TA = 25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.24A 0.22A Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it ideal for high efficiency power management

Contextual Info: DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it

Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

DMN33D8L

Contextual Info: DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits ID max TA = +25°C RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V 30V 250 mA 200 mA 100 mA Description

Contextual Info: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits ID max TA = +25°C RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V 30V 250 mA 200 mA 100 mA Description

Contextual Info: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V •          ID TA = +25°C 170mA SOT363 200mA Description This new generation MOSFET has been designed to minimize the

Contextual Info: DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits Package RDS(ON) (MAX) 190mΩ @ VGS = 10V 30V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°C • Low On-Resistance  Low Input Capacitance

Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the