SOT428 CURRENT RATINGS Search Results

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT428 PIN SYMBOL PARAMETER MAX. UNIT Drain-source voltage Drain current DC Total power dissipation Drain-source on-state resistance 60 12 50 0.15 V A W n MIN.

Transistor SMD SOT363 SC70

Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Contextual Info: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved

transistor 647

Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN130-200D SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance

Contextual Info: Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES • • • • • BUX84S SYMBOL QUICK REFERENCE DATA Fast switching Excellent thermal stability High thermal cycling performance Low thermal resistance Surface mounting package

Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN063-150D SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance

PBYR1025D

Abstract: PBYR10-25d
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1025D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION

smd transistor 647

Abstract: b 647 transistor SMD Transistor 502
Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN025-100D SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance

cd 40118

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR325CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor FEATURES SYMBOL PSMN010-55D QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Logic level compatible VDSS = 55 V

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION

PBYR1025CTDT3

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1025CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR345CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

smd transistor 647

Abstract: BUX84 BUX84S SC18
Contextual Info: Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES BUX84S SYMBOL • Fast switching • Excellent thermal stability • High thermal cycling performance • Low thermal resistance • Surface mounting package QUICK REFERENCE DATA

marking code 38 SMD Transistor

Abstract: smd diode marking 2v SMD TRANSISTOR MARKING code TJ transistor smd code marking tm transistor smd code marking nc g SMD footprint design TRANSISTOR SMD catalog transistor smd marking 457 PHP55N03LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

cd 40118

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

phd50n03

Abstract: SMD fet MARKING 34 MARKING code V0 SMD TRANSISTOR SMD MARKING CODE 97 smd TRANSISTOR code marking 013
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP50N03LT, PHB50N03LT PHD50N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR325CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

cd 40118

Abstract: d 132 smd code diode schottky diode cross reference
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN025-100D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 47 A

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN063-150D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 29 A

BYW29ED-200

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29EB, BYW29ED series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance

PHB101NQ03LT

Abstract: "thermal via" PCB D2PAK "thermal via" PCB D-PAK
Contextual Info: PHB/PHD101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB101NQ03LT in SOT404 D2-PAK

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR745B, PBYR745D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR345CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA