C 245 B
Abstract: diode u2 40 sot437a philips 648
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT437A
C 245 B
diode u2 40
sot437a
philips 648
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 E E1
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OT437A
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MGS956
Abstract: TRansistor CQ 648
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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M3D159
LLE18040XL
OT437A
LLE18040XL
125002/01/pp12
MGS956
TRansistor CQ 648
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BLV2044
Abstract: chip die npn transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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BLV2044
OT437A
SCA52
127061/1200/02/pp12
BLV2044
chip die npn transistor
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philips ferrite 4330-030
Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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M3D159
LLE18010X
SCA63
125002/00/02/pp12
philips ferrite 4330-030
philips ferrite 4b1
TRansistor 648
BY239
BDT91
LLE18010X
j160 capacitor philips
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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BDT91
Abstract: BY239 LLE15370X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE15370X
SCA53
127147/00/02/pp12
BDT91
BY239
LLE15370X
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transistor oc 76
Abstract: PLB16012U Erie Electronics LTD C 829 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier
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PLB16012U
SCA53
127147/00/02/pp12
transistor oc 76
PLB16012U
Erie Electronics LTD
C 829 transistor
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LLE16350X
Abstract: BDT91 BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16350X
SCA53
127121/00/04/pp12
LLE16350X
BDT91
BY239
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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SMD Transistor G6
Abstract: BLV2044 SMD ic catalogue
Text: Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high
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BLV2044
OT437A
SMD Transistor G6
BLV2044
SMD ic catalogue
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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transistor ZA 16
Abstract: PLB16030U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PLB16030U
OT437A
OT437A.
transistor ZA 16
PLB16030U
SC15
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NF4-5V
Abstract: capacitor feed-through ERIE ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
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OT437A
AT-3-7-271SL
PLB16012U
NF4-5V
capacitor feed-through
ERIE ceramic capacitor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C
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PLB16004U
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Transistor AND DIODE Equivalent list
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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BDT85
BY239800
BY239800;
LLE16120X
Transistor AND DIODE Equivalent list
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erie feedthrough capacitors
Abstract: PLB16012U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors
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PLB16012U
OT437A
OT437A.
erie feedthrough capacitors
PLB16012U
SC15
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BY239-800
Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16120X
OT437A.
BY239-800
MGA247
BDT85
LLE16120X
SC15
resistor 3.3 k
Class D Amplifier Circuit
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PLB16004U
Abstract: SC15
Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C
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PLB16004U
OT437A
OT437A.
PLB16004U
SC15
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by239
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LLE16350X
by239
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j78 transistor
Abstract: j78 transistor equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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LLE15180X
j78 transistor
j78 transistor equivalent
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave Transistors General TYPE DESIGNATION CODE F o u r t h l e t t e r s u f f i x l e t t e r Code structure The fourth letter indicates the supply voltage: The standard structures of type designation code for
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XXX00000X
XXX0000X000X
OT439A
FO-91B)
OT443A
FO-57C)
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Transistor AND DIODE Equivalent list
Abstract: 100A101kp
Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE15370X
MBD764
Transistor AND DIODE Equivalent list
100A101kp
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