SOT443 Search Results

LZ14

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES LZ1418E100R PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

BP317

Abstract: RZ1214B65Y L-Band
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A

LZ1418E100R

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b

transistor 38W

Abstract: transistor 38W 3 pin 38w transistor PZB16035U SC15 transistor 38W 16
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

BP317

Abstract: RZ1214B35Y
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

transistor Common Base amplifier

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: SOT443A Blister pack; standard product orientation; 12NC ending 114 Rev. 1 — 28 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: PZ1418B15U PZ1418B30U SC15 el 817
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B15U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A

d 1047 transistor

Abstract: PZ1418B30U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A

RZ1214B65Y

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

LZ1418E100R

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

d 1047

Abstract: sot443a
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A

sot443a

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

JH transistor

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZ1418B15U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RZ1214B35Y PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR

transistor w2a

Abstract: w2a 40 w2a transistor RZ1214B65Y
Contextual Info: Philips Sem iconductors Product specification NPN microwave power transistor RZ1214B65Y PINNING - SOT443A FE A T U R E S • Interdigitated structure pro vid es high em itter efficiency PIN • D iffused em itter ballasting resistor providing excellent current sh aring and w ithstanding a high V S W R

PZ1418B15U

Abstract: PZ1418B30U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

GL008

Abstract: PZ1721B25U Philips SSB
Contextual Info: Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent