SOT82 Search Results

BUX100

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

690 lc

Abstract: BUW14
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

BT148-600R

Contextual Info: TO -22 AB BT148-600R SCR 13 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SIP3 SOT82 plastic package intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other

Contextual Info: Package outline HSOP16: plastic, heatsink small outline package; 16 leads SOT822-1 A E D E2 X c y HE v A D1 e3 2x D2 bp2 w 16 12 Q A2 E1 A pin 1 index A1 (A3) A4 θ 1 Lp 11 Z e (6×) e1 (2×) bp1 (5×) e2 (4×) detail X w w bp (10×) Q 5 Unit(1) mm max

Contextual Info: Package outline Plastic single-ended package; 3 leads in-line SOT82 E A q P D L1 Q L 1 2 3 c w M b e e1 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A b c D E e e1 L L1 max. P Q q w mm 2.8 2.3 0.88 0.65 0.58 0.47 11.1 10.5 7.8 7.2

Contextual Info: Package outline LFBGA228: plastic low profile fine-pitch ball grid array package; 228 balls; body 15 x 15 x 1.05 mm D B SOT821-1 A ball A1 index area A E A2 A1 detail X C e1 e AB AA Y W V U T R P N M L K J H G F E D C B A ball A1 index area ∅v ∅w b 1/2 e

BT151

Abstract: BTA151 500R 800R BT145 bt151 specification
Contextual Info: Philips Semiconductors Product specification Thyristors sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. PINNING - SOT82 PIN

bta16 600b transistor

Abstract: bta16-600b LM317* switching STPS series 2A VOLTAGE REGULATOR TO-220 BTA06-600B bta40-600b application BTA40600B TO-220 transistor package LM338K
Contextual Info: PHOTOCOPIERS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Cont’d POWER SUPPLY Type Package L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 1.5A Series TO-220/Isowatt 220/TO-3 1.5A Series TO-220/Isowatt 220/TO-3 0.5A Series TO-220/Isowatt 220/DPAK/SOT194/SOT82

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

Contextual Info: N AUER PHILIPS/DISCRETE bSE D • bbSB'lBl QQSflSb3 ^36 « A P X Philips Sem iconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in

BUX100

Abstract: transistor ""
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

sot821

Contextual Info: Package outline Philips Semiconductors LFBGA228: plastic low profile fine-pitch ball grid array package; 228 balls; body 15 x 15 x 1.05 mm D B SOT821-1 A ball A1 index area A E A2 A1 detail X C e1 e AB AA Y W V U T R P N M L K J H G F E D C B A ball A1 index area

BUX86P

Abstract: BUX 88 BUX 88 S bux c BUX87P bux 86p
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

mmic e3

Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16
Contextual Info: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 01 — 3 March 2008 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of LFBGA183 package SOT825-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

Contextual Info: PC board footprint NXP Semiconductors Footprint for reflow soldering of HSOP16 package sr −0.075 mm around copper 0.40 SOT822-1 sr +0.075 mm around copper 1.60 4 x 0.60 (10 ×) 11.78 8.86 6.82 4.78 2.74 1.20 (2 ×) 0.45 5.90 7.62 12.90 1.10 (5 ×) sp −0.025 mm

smps with uc3842 and tl431

Abstract: lm317 SO-8 LM337 TO-3 sg3525a smps op-amp lm723 LM338K LM350K ST90R30 2K EPROM Single Schottky diode TO-220
Contextual Info: PRINTERS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Type POWER SUPPLY Cont’d Description L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 1.5A Series TO-220/Isowatt 220/TO-3 1.5A Series TO-220/Isowatt 220/TO-3 0.5A Series TO-220/Isowatt 220/DPAK/SOT194/SOT82

Contextual Info: Package outline TFBGA256: plastic thin fine-pitch ball grid array package; 256 balls; body 11 x 11 x 0.8 mm SOT829-1 B D A ball A1 index area A E A2 A1 detail X C e1 1/2 e e Y V T P M K H F D B ball A1 index area y y1 C ∅v M C A B b ∅w M C W e U R N L

Contextual Info: B TO -2 20A SOT82 Tube pack; standard product orientation; 12NC ending 127 Rev. 1 — 22 November 2012 Packing information 1. Packing method Item Material Printed plano box Tape Labels Tube Turnlock Seal Cardboard carbon coated Polypropylene Paper Polyvinylchloride

Contextual Info: Package outline HSOP16: plastic thermal enhanced small outline package; 16 leads; body width 7.5 mm; heatsink D SOT820-1 A E c y X heatsink side v HE M A Dh 16 9 A A2 Eh A 3 A1 θ pin 1 index Lp L detail X 1 8 e Z w bp M 5 10 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: Package outline LQFP80: plastic low profile quad flat package; 80 leads; body 14 x 14 x 1.4 mm SOT823-1 c y X A 60 61 41 40 ZE e A A2 E HE A 3 A1 θ w M Lp bp pin 1 index L detail X 21 80 20 1 w M bp e v M A ZD B D HD v M B 5 10 mm scale DIMENSIONS (mm are the original dimensions)

BUX86P

Abstract: BUX87P bux 86p
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

m2 m2.5 m3 bolt tensile

Abstract: torque for SELF TAPPING SCREW Crystal washer heatsink TO126 TO126 transistor torque of screw for pcb SOT-82
Contextual Info: Philips Semiconductors Mounting instructions TO126; SOT82 GENERAL DATA AND INSTRUCTIONS Heatsink compound General rules The thermal resistance from mounting base to heatsink Rth mb-h can be reduced by applying a metallic oxide compound between the contact surfaces. Values given

BU724A

Abstract: philips BU724A
Contextual Info: PHILIPS INTERNATIONAL MSE D O 711005b 0030=121 M Q P H I N BU724A 7~-33-2f — SILICON DIFFUSED POWER TRANSISTORS M onolithic high-voltage npn Darlington transistors w ith integrated speed-up diode in a SOT82 envelope, intended fo r fast switching applications such as small m otor control and switch-mode power supplies