SOT88 Search Results

walkie talkie circuit

Abstract: BAP1321LX BAP64LX BAP65LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX walkie-talkie
Contextual Info: RF PIN diodes in leadless SOD882T Boost RF performance and reduce system size Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while

SOT886

Abstract: NXP 12NC ending 12NC NXP LABEL
Contextual Info: SOT886 Product orientation 12NC ending 115 and 132 Rev. 03 — 24 April 2009 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT886 115 180 x 8

Contextual Info: ON 6 SOT886 XS XSON6; reel pack; standard product orientation; 12NC ending 132 Rev. 1 — 26 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

IP4282CZ6

Abstract: "ESD Protection" IP4221CZ6-S IP4283CZ10 IP4280CZ10 IP4281CZ10 SOT1059
Contextual Info: NXP high-speed ESD protection in ultra-thin leadless packages IP4221/42 < 1.0 pF and IP4281/2/3 (< 0.7 pF) Bring ESD protection closer to the data lines These integrated ESD protection devices, housed in leadless SOT886 and SOT1059 packages, simplify circuit design, reduce routing design times, and cut pick-and-place costs. They’re cost

FAR-F6KA-1G5754-L4AA

Abstract: SAFEA1G57KE0F00 EPCOS SAW Soldering Profile BGU7005 B9444 fm radio jammer FAR-F6KA-1G5754-L4AJ SAFEA1G57Kh0F00 LQW15A military jammer application
Contextual Info: BGU7005 SiGe:C Low Noise Amplifier MMIC for GPS Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description The BGU7005 is a Low Noise Amplifier LNA for GPS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU7005 requires only one

Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)

Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

BISS 0001

Contextual Info: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC123JMB

Contextual Info: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA143Z

Abstract: PDTA143ZMB PDTC143ZMB PDTA143
Contextual Info: 83B PDTA143ZMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC143XMB

Abstract: PDTA143 PDTA143X
Contextual Info: 83B PDTA143XMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 10 k Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

SOT883

Abstract: sot-883 SC-101 JEDEC SC-101 EB11 SC101
Contextual Info: PDF: 2003 Apr 04 Philips Semiconductors Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A (1) A1 max. b b1 D

Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

NXP SMD ic MARKING CODE

Abstract: smd code marking ft sot23 marking 41 sot23 nxp
Contextual Info: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.

PDTC143XMB

Contextual Info: 83B PDTC143XMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 57

Abstract: PDTC114YMB PDTA114YMB
Contextual Info: 83B PDTC114YMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

SMD TRANSISTOR MARKING 2X

Abstract: PDTA143
Contextual Info: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

transistor smd code marking 102

Abstract: TRANSISTOR SMD 2X K
Contextual Info: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

PDTA144

Abstract: nxp MARKING CC PDTC144V
Contextual Info: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.