SOT89 FOOTPRINT Search Results

BSS225

Contextual Info: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Ordering Code Tape and Reel Information Marking BSS225 SOT89

BSS225

Abstract: L6327
Contextual Info: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes

MARKING KD

Abstract: BSS225
Contextual Info: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes

sot89 footprint

Contextual Info: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT89 6.6 2.4 3.5 7.6 0.5 preferred transport direction during soldering 1.8 2x solder land 1.9 1.5 (2×) solder resist occupied area www.nxp.com

sot089

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 3 leads SOT89 4.75 2.25 2 1.9 1.2 0.2 0.85 1.7 1.2 4.6 solder land 0.5 1 3x 4.85 1.1 (2×) solder paste deposit 1.5 1.5 solder land plus solder paste

Contextual Info: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at

Transistor AC 51 0865 75 730

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

PMX15

Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm

Contextual Info: SOT89-3 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51796A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm

FPD3000SOT89

Abstract: FPD3000SOT89E InGaAs hemt biasing
Contextual Info: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

FPD3000SOT89

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Transistor BC 1078

Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

TLE4964-3K

Abstract: SMD CODE PACKAGE SOT89 TLE4961 TLE4964 TLE4961-5K TLE4905G TLE4935G
Contextual Info: Product Brief New Generation Hall Switches Replacement types for our legacy sensor products in SOT89 package Features TLE4961-1K, TLE4964-3K, TLE4961-5K „„ 3.0V to 32V operating supply The new family of Infineon Hall Switches includes latches and unipolar switches.

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Contextual Info: SO T8 9 PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 SC-62/TO-243 SurfaceMounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits

Contextual Info: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at 2.0GHz Single 5V Power Supply

Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m

FPD1500SOT89

Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky