SOT89 HA Search Results

sot89 stencil

Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
Contextual Info: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm

Contextual Info: SOT89 W hilst this S.M Package has been available fo r m any years there is a lack o f new specifications being offered in the SOT89 package, by m ost other suppliers. Zetex has addressed this void by in trod ucing a range of high perform ance 1.5 w a tt dissipation SOT89 transistors, offering the com bined benefits o f circuit efficiency and board

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

MARKING N93

Abstract: 4446 FCX493 FCX593 fcx493ta
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

SOT89 52 10A

Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE sat < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

FCX619

Contextual Info: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound

2DB1188P

Abstract: P23Q
Contextual Info: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.

BCX5216QTA

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

Contextual Info: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state

FCX690BTA

Abstract: SOT89 MARKING CODE .3B
Contextual Info: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V  Case: SOT89  IC = 2A high Continuous Collector Current  Case material: molded plastic. “Green” molding compound.

Contextual Info: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

MARKING KN2

Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTN2007Z

Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

SOT89 transistor marking 5A

Abstract: ZXTN2011Z ZXTN2011ZTA
Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

Contextual Info: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management