SOURCE GATE Search Results

X02A

Abstract: CMXDM7002A 2N7002
Contextual Info: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

ID09

Contextual Info: Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90

sd301

Abstract: SD306
Contextual Info: D -M O S A BSO LU T E M A XIM U M R A T IN G S T a = 25°C unless otherwise noted (cont’d) v SB (V) Parameter V DS (V) Drain-to-Source V SD Source-to-Drain V DB M Drain-to-Substrate Source-to-Substrate V GS (V) Gate-to-Source V GB <v l Gate-to-Substrate

Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62708N TENTATIVE DATA 8CH HIGH CURRENT SOURCE DRIVER The TD62708N is comprised of eight source current o utput stages and EN ABLE inputs which can gate the outputs. TD62708N features a large output source current o f 1.8A

2sk439

Abstract: 2SK359 dsx20 DSA003731
Contextual Info: 2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS ±5 V Drain current ID

Contextual Info: RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

Contextual Info: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology

Contextual Info: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

2SK1215

Abstract: 2SK359 DSA003638
Contextual Info: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 Z 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage

2SK359

Abstract: DSA0037337 DSA003733
Contextual Info: 2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 2 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 12 @ VGS =10V 7.8 17 @ VGS =4.5V 7 Block Diagram

TSM40N03P

Contextual Info: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram

2N3797

Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D

Contextual Info: TSM070N07PQ56 65V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 65 V RDS on (max) 7 mΩ Qg 125 nC Features ● ● ● Block Diagram Low On-Resistance

AFP02N3-213

Abstract: um 5506 AFP02N3-212
Contextual Info: Low Noise Packaged PHEMT Chips AFP02N3-212, AFP02N3-213 Features 213 Drain • Low Noise Figure, 0.75 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz Source Source ■ High MAG, > 10.0 dB @ 12 GHz Gate Drain Source ■ 0.25 µm Ti/Pd/Au gates ■ Passivated Surface

TSM4424

Abstract: TSM4424CS
Contextual Info: TSM4424 20V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V 20 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 4.5V 4.5 35 @ VGS = 2.5V 3.5 45 @ VGS = 1.8V 2.0 Block Diagram

D1094UK

Abstract: idq06
Contextual Info: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED G 4 PLS N D M (2 PLS) SOT 171 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6

Contextual Info: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED G 4 PLS N D M (2 PLS) SOT 171 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6

s237 2.5 m

Abstract: TA-228 FSS237 S237
Contextual Info: Ordering number:ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions • Ultralow ON resistance. · 2.5V drive. unit:mm 2116 [FSS237] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source

HUF75829D3S

Abstract: AN9321 AN9322 HUF75829D3 HUF75829D3ST TB334
Contextual Info: HUF75829D3, HUF75829D3S Data Sheet February 2000 File Number 4795.1 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75829D3S HUF75829D3

HUF75842P3

Abstract: HUF75842S3S HUF75842S3ST TB334 75842P 75842S
Contextual Info: HUF75842P3, HUF75842S3S Data Sheet December 2000 File Number 4815.1 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75842P3 HUF75842S3S

AN9321

Abstract: HUFA75829D3 HUFA75829D3S HUFA75829D3ST TB334
Contextual Info: HUFA75829D3, HUFA75829D3S Data Sheet November 2000 File Number 4966 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75829D3S HUFA75829D3