SOUTH SEA SEMICONDUCTOR Search Results

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

SSS2209

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

BSS138

Contextual Info: BSS138 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 50V 0.22A SOT-23 RDS(ON) (Ω) Max D 3.5 @VGS = 10V G 6.0 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

tjm sot23

Contextual Info: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

sss2309

Contextual Info: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

SSM4431

Contextual Info: SSM4431 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 6.0A - 30V 1 70 @VGS = - 5V 2 3 4 D (5, 6, 7, 8) 80 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.

SSM4435A

Contextual Info: SSM4435A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 25 @VGS = - 10V - 8.0A - 30V 7 45 @VGS = - 5V 6 5 1 2 3 4 D (5, 6, 7, 8) 60 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.

Contextual Info: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)

Contextual Info: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

Contextual Info: SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary SO-8 8 VDS V 7 RDS(ON) (mΩ) Max ID (A) 6 5 30 @VGS = 4.0V 6A 20V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.

SSD3055LA

Contextual Info: SSD3055LA N-Channel Enhancement Mode MOSFET Product Summary VDS V TO-252 RDS(ON) (mΩ) Max ID (A) D 65 @VGS = 10V 15A 25V G 85 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

TLO 81

Abstract: P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT SSM8405
Contextual Info: SSM8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 25 @VGS = 10V 30V 7A 35 @VGS = 5V 1 2 40 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)

Contextual Info: SSM4415 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 8 25 @VGS = - 20V - 8.0A - 30V SO-8 35 @VGS = - 10V 6 5 1 2 3 4 D (5, 6, 7, 8) FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. G (4)

SSN2N7002A

Contextual Info: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A

P-Channel mosfet 40V

Abstract: SSM8445
Contextual Info: SSM8445 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 40V 6.8A 45 @VGS = 5V 1 2 50 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)

MOSFET "MARKING CODE 7V"

Abstract: SOT-363 mosfet A495 5G12
Contextual Info: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.

ssg8

Abstract: SSG8206A 7A TSSOP-8
Contextual Info: SSG8206A Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 16V 7A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 20 @VGS = 4.0V 1 35 @VGS = 2.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TSSOP-8 package.

210t2

Abstract: SSM8958
Contextual Info: SSM8958 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 30V 6A 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 1 2 60 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2) G2 (4) 60 @VGS = - 10V

ssg8

Abstract: MOSFET TSSOP-8 dual n-channel SSG8405
Contextual Info: SSG8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 25 @VGS = 10V 30V 6.5A 35 @VGS = 5V 1 40 @VGS = 4.5V 2 3 6 5 4 D (1) D (8`) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V

Contextual Info: SSM9923 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 30 @VGS = -4.5V -5.5A -20V 1 45 @VGS = -2.5V 2 3 4 90 @VGS = -1.8V D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.

SSS3462

Abstract: tlo 72
Contextual Info: SSS3462 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max D 60 @VGS = 10V 3.2A 60V SOT-23 G 85 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

SSG4935A

Contextual Info: SSG4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 27 @VGS = - 10V - 6.5A - 30V 42 @VGS = - 5V 1 50 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). G (4)

tic 2250

Contextual Info: SSS2316 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 20 @VGS = 4.5V G 30 @VGS = 2.5V 5A 20V S 45 @VGS = 1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S