SP 8616 Search Results

SES5401-SES5403

Abstract: SES5401 SES5402 SES5403
Contextual Info: SES5401-SES5403 RECTIFIERS High Efficiency, 8A DESCRIPTION The SES5401 Series, in the econom ical, convenient TO-220 package, is sp ecifically designed for operation in power switching circu its to frequencies in excess of 100KHZ. The very low forward voltage and

UES804R

Abstract: ES804-U diode ues806 Fast Recovery Rectifier, 300V UES804 UES805 UES806
Contextual Info: U ES804-U ES806 RECTIFIERS High Efficiency, 50A FEATURES • Very Low Forward Voltage 1.15V • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • M echanically Rugged • Both Polarities Available DESCRIPTION The UES804 is sp ecifically designed

BYW29

Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401
Contextual Info: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching

ES2602

Abstract: ES2601T unitrode Applications Note
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP » F | ci347cltJB D D l l O M l 92D 11041 High Efficiency, 30ACenter-Tap FEATURES • Very Low Forward Voltage • Very Fast S w itc h in g Sp e e d • C on venient P ackage • H igh S u rge • Low Therm al R e sista n ce

ubs421

Abstract: bisyn UBS-421
Contextual Info: BISYN SYNCHRONOUS RECTIFIER UBS421 For Low-Voltage < 5.0V Loads FEATURES • Very Low On Resistance, Typically 1 4 m fi • H igh Reverse B lockin g V e c s - 40V • Can be PWM C ontrolled to Provide Regulated Voltage to Load DESCRIPTION The BISYN is a bipolar ju n c tio n tra n sisto r sp ecifica lly designed to perform the rectifying

TO-247 Package

Abstract: TO247 package
Contextual Info: POWER SCHOTTKY RECTIFIERS SD41P 60A Pk, 45V FEATURES DESCRIPTION • Econom ical Convenient TO-247 Package • Insulated M ounting Hole • Can B e C lip Mounted • M e ch an ically Rugged • Low Therm al Resistance • Extrem ely Low V f The S D 4 1 P Device, in the econ om ical, convenient TO-247 package, is sp e cific a lly

SD 1351

Abstract: ZZ-22 sd3s ZZ22 711-Z
Contextual Info: S D - 39860-003 SCALE 2 [ .47] 4 = 1 . 1170] — T H T I ! 1 _ _ 3 = t T „99 .0 3 91 3.71 [.1461 MATERIAL: SEE TABLE FIN ISH ES: SEE TABLE PRODUCT SP E C IFIC A TIO N : P A C K A G IN G : M AT ES W ITH : INCH D I M S ” XX" REFER NOT R E Q U I R E D NOT R E Q U I R E D

MC81F8616

Abstract: MC81F8816 MC81F8616L MC81F8616Q MC81F8816Q SP 8616 icom sc 1025 MC81C8616L bbc timer stt 11 PPR 1042
Contextual Info: ABOV SEMICONDUCTOR Co. Ltd. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC81F8816/8616 User’s Manual Ver. 1.01 Version 1.01 Published by FAE Team 2008 ABOV Semiconductor Co., Ltd. All rights reserved. Additional information of this manual may be served by ABOV Semiconductor offices in Korea or Distributors.

Contextual Info: 10 9 P/N O F ADAPTER M A T E R IA L OF SL E EV E 86166-1100 ZR 86167-1100 PHOSPHOR BRONZE 86166-1110 ZR 86167-1110 PHOSPHOR BRONZE I 8Ô166 8 TYPE COLOR SIN G L E MODE BLUE BE IG E 86166-1130 ZR 86167-1130 PHOSPHOR BRONZE 86167-1120 ZR MULTIM ODE BLACK AQUA

M35015

Abstract: 1773m m35014 35015-XXXSP SP 8616
Contextual Info: M ITSUBISHI MICROCOM PUTERS M 35014-XXXSP,M 35015-XXXSP S C R E E N CH A R A C T ER and P A T T E R N D IS P L A Y C O N T R O L LE R S D E S C The R I P T I O N P IN C O N F I G U R A T I O N T O P V IE W M 3 5 0 1 4 -X X X S P and M 3 5 0 1 5 -X X X S P are T V s cre e n

SD-33476-161

Abstract: FORD/MOLEX
Contextual Info: GROMMET CAP PER I C TER SEAL GROMMET SE A L SECTION RECEPTACLE N S ER T SHOWN N PRE-LOCK POSITION} SE E NOTE »2 MATERIAL RECYCLE CODE MOLDNG LOCATION CODE MOLD CAVITY ID. TERMINAL POSITION 7 TERMNAL POSITION 2 TERMNAL POSITION 0 TERMNAL POSITION 1 SECTION B-B

gj hall effect

Abstract: 272 C CDE 8 2sd 882 p COP840CJ M28B N28B
Contextual Info: bSOHEfl ODflSBOD Tlfl • _ . S e m i c o n d u c t o r August 1996 COP840CJ/COP842CJ/COP940CJ/COP942CJ 8-Bit Microcontrollers with Multi-Input Wake-Up and Brown Out Detector General Description I/O Features The COP840CJ is a member of the COP8tm feature family

SES5301

Contextual Info: RECTIFIERS SES5301-SES5303 High Efficiency, 5A FEATURES • Low Forward Voltage • Fast Recovery Times • Small Size • High Surge D ESC R IP T IO N An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast

1N645

Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Contextual Info: RECTIFIERS JAN, JANTX 1N645 JAN, JANTX & JANTXV 1N645-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • • These devices are useful in general purpose low current applications in high reliability and military equipment. Metallurgical Bond Qualified to MIL-S-19500/240

SES5803

Abstract: DO-5 Package SES5801 SES5802
Contextual Info: RECTIFIERS SES5801 SES5802 SES5803 High Efficiency, 60A D ESCRIPTIO N The SE S , super-fast recovery, rectifiers are specifically designed for operation in power switching circuits. Their super-fast recovery time and very low forward voltage drop make them particularly

Contextual Info: SIEMENS Preliminary Data sheet SDA 2546 Nonvolatile Memory 4KBIT E2PROM with l2C bus Interface Features : • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technologie E2PROM • 512 x 8 bit organization • Supply voltage 5V

10A jantx diodes

Abstract: JANTX469-1 735 01 bridge rectifier Unitrode discrete
Contextual Info: RECTIFIER ASSEMBLIES JAN &JANTX 469-1 JAN & JANTX 469-2 JAN & JANTX 469-3 Single Phase Bridges, 10 Amp, Military Approved FEATURES DESCRIPTION • • • • • • • T h is serie s of m ilitary high-current single-p h a se bridge offer the utm ost in

UPTA520

Abstract: UPTA510 UPTA530 UPTAS20
Contextual Info: POWER TRANSISTORS UPTA510 UPTA520 UPTA530 0.5 Amp, 300V, Planar NPN, Plastic FEATURES D ESCRIPTIO N • • • • U nitrode h igh voltage tra n sisto rs provide a u niq u e com b in ation of low saturation voltage, fast sw itching, an d excellent gain. They are ideally su ite d for off-line power

SP 8616

Abstract: 4cx 250 BC
Contextual Info: SIEMENS Preliminary Data sheet SDA 2546 Nonvolatile Memory 4KBIT E2PROM with l2C bus Interface Features : • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technologie E^PROM • 512 x 8 bit organization • Supply voltage 5V

N5488

Abstract: 2N5488 2n5487 5488
Contextual Info: 2N5487 2N5488 POWER TRANSISTORS 5 Amp, 150V, Planar NPN 5487-1 5487-3 5488-1 5488-3 FEATURES D ESCRIPTION • • • • • • U nitrode power tra n sistors provide a u niq u e com bination of low saturation voltage, h igh gain and fast sw itching. They

Unitrode 678-6

Abstract: UNITRODE 678-4 unitrode 695-6 696-6 z 682 Unitrode 695-1 Unitrode MARKING
Contextual Info: 678, 682, 695 696 SERIES RECTIFIER ASSEMBLIES Three Phase Bridges, 15-25 Amp, Standard and Fast Recovery Magnum FEATURES DESCRIPTION • • • • • • • T h is se rie s of three phase M A G N U M ® b rid ges offer the ultim ate in high current power s u p p ly a pplications. The fast

I100S

Abstract: TR4420
Contextual Info: T2 UNITRODE CORP 9347963 DE § ^ 3 4 7 ^ 3 OOlllOfl 3 ~ 92D UNITRODE CORP RECTIFIERS Dr~0(-n 11108 UTR4405-UTR4440 UTR5405-UTR5440 UTR6405-UTR6440 UTR4405HR-UTR4440HR UTR5405HR-UTR5440HR UTR6405HR-UTR6440HR Fast Recovery, 6 Amp to 9 Amp FEATU RES • Continuous Rating: to 9A

IN5804

Abstract: j 5804 IN5802 unitrode 1n5806 IN5802-1N5806 1N5806 JANTXV JTX 1N5811 in5806 1N5811 1N5807 JANTXV
Contextual Info: RECTIFIERS Military Approved, High Efficiency, 2.5 Amp and 6.0 Amp 1N5802,1N5804,1N5806, 1N5807,1N5809,1N5811 JAN, JANTX &JANTXV FE A T U R E S D ESCR IP TIO N • Qualified to MIL-S-19500/477 • PIV: to 150V • Low Forward Voltage T h is series of high efficiency power

TVS315

Abstract: TVS328 Unitrode Linear Integrated Circuits Data and Application tvs510 tvs515 TVS524 TVS APPLICATION TVS505 TVS305 TVS310
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS S i v l s l l FE A T U R E S D ESCR IP TIO N • Up to 500W for lm S Pulse Power Capability • Clam ping Time in Picoseconds • Direct A p p licab ility for a ll popular Microprocessors and 1C fam ilies • Metallurgical!;/ bonded assembly system