SPA SEMICONDUCTOR LF Search Results

2SD439E

Abstract: 2SC536E 2SC536E,F zkb transformer 2SD439 2SC536EF sirio 2SC536 sanyo 2SC536e b559
Contextual Info: SANYO SEMICONDUCTOR CORP lfiE D I ? cn ? G 7 t . □ □□ M 'i lS T~33- 2SD439 N P N / pnp Epitaxial P lan a r 2 00 9 A S ilic o n T ra n sisto rs Low Frequency Power Amp, Medium Speed Switching Applications 2SB559 372E Features . Large allowable collector dissipation and wide ASO.

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK2073

Abstract: 3SK251 spa semiconductor lf SVC355 tuner 92 2SK715
Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y Devices 1 . AM, F'M T u n e r ANT V LAI 137 LAI 193 ♦ B F Amp ★ T u n i nR Diode use SV C 321SPA SVC352 SYC323 SVC353 SVC333 SVC 3 5 4 SVC341 SVC355 SVC3Í2 SVC363 SVC364 SVC343 SVC34 4 S VC 34 5 S VC 3 4 6

18 ML 2A ptc

Abstract: Q6025LX FHN20G FHN26G2 pico electronics transformers 1500w tvs diode SMD FHN26G2, ROHS DIODE 3A do-214 RECTIFIER D6025L 1.5ke series
Contextual Info: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide DO W Lit N te LO lfu A se D .co C m AT /c A at LO alo G gs S A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest

POWER TRANSFORMER E154515

Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD

PCP116

Abstract: svc253
Contextual Info: SA^ÊYO VAR 1ABLE-CAPACI TANCE DI ODES IOCAP Case Outlines(unit:m m ) For^gackage pins, see a catalog, } J3g jg Featur-es ode ♦High capacitance ra tio ♦Single type and twin type av ailable ie/Cathode ♦Good lin e a r ity * High Q A . Af Cmax-Cmin ^ -fc-AC CDn-CD3.-X100.

SFAI608G

Abstract: 601-G SFA1608 1607G otis Marking Losa SFA1603G
Contextual Info: TAIWAN SEMICONDUCTOR s SFA1601G - SFA1608G 16.0 AMPS. Glass Passivated Super Fast Rectifiers tò RoHS T.QL-2 2 QAC COMPLIANCE . | 85M .7Q| 17fif4 4 4 1 n*A J14^-t ÜLLilü Ja=. JSSLLL& 11.V9 S7 04 y 1 14) inson?) •S34|'1SI> '.ilSi'.t-1) Features '> '> ❖

sj 2025

Abstract: 2SK597 00Gt
Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

2SD1397

Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Contextual Info: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.

ic 30359

Contextual Info: SA N Y O SEMICONDUCTOR CORP r-3 3-, 2SC3985 2041 N P N P l a n a r S i l i c o n D a r li n g t o n T r a n s i s t o r Driver Applications 2218A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

wj 5 77

Abstract: 2SC3985 DDD3710 PA 2027A a 1201 sanyo
Contextual Info: SA N Y O SEMICONDUCTOR CORP r-3 3-, 2SC3985 2041 N P N P l a n a r S i l i c o n D a r li n g t o n T r a n s i s t o r Driver Applications 2218A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain

TRANSISTOR FS 2025

Abstract: 21AJ BUSH(M)UL sanyo SILICON TRANSISTOR FS 2025 sj 2025 sj 2038 2SC3085 DDD3710 B1181 LT 450 mbr
Contextual Info: SANYO SEMICONDUCTOR CORF r - 3 3 -i 2SC3085 N PN Triple Diffused Planar Silicon Transistor 2017 Switching Regulator A . 1* _ 1055A Features . High breakdown voltage VCBQ^500V . Fast switching speed. ~ . Wide ASO. Absolute Maxima Ratings at Ta=25°C Collector to Base Voltage

2SC3576

Abstract: VEBO-15V high vebo
Contextual Info: Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • LF general-purpose amplifiers, various drivers, muting circuit. unit:mm 2033 [2SC3576]

Contextual Info: Ordering n u m b e r: EN 2 4 6 0 2SA1574/2SC4070 No.2460 i sm Y O PNP/ NPN Epitaxial Planar Silicon Transistors i. Switching Applications with BiasfResistance • 'I V Làdi' _{ 1é '“''1 - 1*■ */ :. J< l#k£ A p p lic a tio n s S w itch in g c i r c u i t ,

2SA1509

Abstract: 2SC3899
Contextual Info: Ordering number: EN 2103 A 2SA1509/2SC3899 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i ""V Applications . Switching circuits, inverter circuits, /*./ 4!^%^ % Í interface c i r c ^ t s , ^¿ver^ircu.jfctá

SC3699

Contextual Info: Ordering number: EN 2103A 2SA1509/2SC3899 PN P/ NPN E pitaxial P lan ar Silicon T ran sisto rs SAiYO Switching Applications with Bias Resistance i ""V Applications . Switching circuits, inverter circuits, /*./ 4!^%^ % Í interface c i r c ^ t s , ^¿ver^ircu.jfctá

C4048

Abstract: 2SA1564 13KA 2SC404
Contextual Info: O rde rin g n u m b e r: E N 2 3 8 1 2SA1564/2SC4048 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O Switching Applications _ with Bias Resistance i Applications . Switching circuit, inverter circuit, interface circ^lV» dt^iör cÖöuit Features

Contextual Info: Ordering number:EN 2 1 5 8 A 2 S B 1 2 2 9 /2 S D 1 8 3 5 PNP/ N P N Epitaxial Planar SiliconTransistors i High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes

JTAG MIPS

Abstract: Cy7C601 cy7c602 6001K 7C601 CY7C604
Contextual Info: r PRELIM INARY CYPRESS SEMICONDUCTOR CYM6001K = SPARCore CPU Module Features • Available at 2 5 ,33, and 40 MHz Functional Description • Complete SPARC® CPU solution, includingcache • Each SPARCore module features: — SPARC integer and floating-point

spa 40

Contextual Info: MCP Multi-Chip Package FLASH MEMORY 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY MB84VB2000-io/MB84VB2001-io • FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate CE.

Contextual Info: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50102-2E MCP Multi-Chip Package FLASH MEMORY CMOS 8M (X 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY M B 84 V B 200 0-1 0/M B 84V B 2 001 -10 • FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate UE.