Untitled
Abstract: No abstract text available
Text: r SIEM ENS/ SPCL* E LECTRONIC 1SE D | dZBbBti'l DD1S730 1 j D 1160 Application: • flame detectors in oil burners automatic street lamp switching Features: • hermetically sealed glass housing © vertical and horizontal light incidence © high power dissipation
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DD1S730
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BFT97
Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages
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BF199
BF240
BF241
BF254
BF255
BF414
BF420
BF420L
BF421
BF421L
BFT97
Siemens 1985
BFT65
bfr91a siemens
BFQ64P
BFT98T
BFS55A
BFR96S
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MS3035
Abstract: No abstract text available
Text: SIEMENS/ SPCL* ELECTRONIC 7-^/ - L f 1SE D | 6531,311 0Q1S733 7 | M 9960 Application: exposure meters in cameras # automatic light intensity control. Features: • epoxy-coated low profile cell 9 small dimensions TYP M 9960 11 a 9960 11b R10 [kO] R100
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0Q1S733
MS3035
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Untitled
Abstract: No abstract text available
Text: S IE ME NS / SPCL* ELECTRONIC T~H\ - 1SE 0 | flaabBlT 0015737 4 | _ U 1160 Features: Application: • reed greenglass housing • hermetically sealed • vertical and horizontal light incidence U 1160. • flame detectors in oil burner control devices contrast control in
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TR40-10
Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance
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23b32G
BSS123
Q62702-SS12
OQ171bO
TR40-10
SA SOT-23
MARKING CODE 028a sot 23
Q62702-SS12
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830 CE
Abstract: No abstract text available
Text: SIEMENS/ SPCLn SEMICONDS flfl 8236320 SIEMENS/ S P C L , SfcMlUurcua Dif|ö53b350 DD145bE □ 88D 14262 D 3 1 2 { T ra n s is to rs — bip olar T ra n sisto rs for high voltages P la stic p ackage TO 92 = N ^CEO PNP = P ^ CER* lc P.o. V mA mW /c B O LU_ u
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53b350
DD145bE
830 CE
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npn bc 337
Abstract: No abstract text available
Text: SIEMENS/ SPCLi SEMICONDS flflD D • ÔS3b32a DOlMaSb 4 « S I P T “- 2 ^ « 0 | Tran sisto rs — bipolar A F tran sisto rs P la s tic p ack a g e TO 92 Type NPN PNP Maximum ratings N P = = ¡c V cbo Characteristics T A = 25°C Figure fire Plo t ^CES*
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S3b32a
npn bc 337
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diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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828BD
Abstract: BD NPN transistors BD 826 NPN
Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60
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00142bQ
828BD
BD NPN transistors
BD 826 NPN
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photoresistor LDR 1000
Abstract: photoresistor LDR LT30 lt 8234 diode Heimann lt opto coupler siemens Photoresistor ldr 04 LT2011 optocoupler Photoresistor
Text: SIEMENS/ SPCLt ELECTRONIC 1SE D | 5531,31=] 00157*41 b | 1 ^ T-Mi-SI Opto-couplers Heimann opto-coupler consist of a combi nation of extremely high-intensity light emit ting diodes LED as emitters and specific photocell as detectors. Both elements are
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00157M1
photoresistor LDR 1000
photoresistor LDR
LT30
lt 8234 diode
Heimann lt
opto coupler siemens
Photoresistor
ldr 04
LT2011
optocoupler Photoresistor
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bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
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00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
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power transistor mrc 438
Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase
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23SbQS
0Q043bfl
BD434
BD440
BD442
434/BD
436/BD
BD434.
BD438.
fl23SbO
power transistor mrc 438
mrc 436
mrc 438
transistor mrc 439
mrc 442
mrc 437
transistor bd 370
siemens d213
transistor BD 370 b
mrc 439
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Untitled
Abstract: No abstract text available
Text: BEE D • aS3b3SQ OOlbbSfl 1 « S I P BCP 69 PNP Silicon AF Transistors SIEMENS/ SPCL-. SEMICONDS r - 3 3 -/? • • • • • For general AF application High colleclor current High collector gain Low collector -emitter saturation voltage Complementary type: BCP 68 NPN
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12-mm
C2130
OT-223
23b350
BCP69
j-33-17
23b320
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b32ü QG172^b S [SIP SN 7002 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • _ SIPMOS - enhancement mode Draln-source voltage Vtt = 60V Continuous drain current I d = 0.19A Drain-source on-resistance fios on = 5.00 Total power dissipation
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23b32Ã
QG172
Q67000-S063
G017301
T-55-25
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b320 QG171ÜS «SIP SIP M O S N Channel MOSFET _ SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIP M O S - depletion mode • Drain-source voltage • Continuous drain current Vfcs = 600V /D = 0.100A • Drain-source on-reslstance • Total power dissipation
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23b320
QG171Ã
Q62702-S655
-100V.
00A//J3
-100V,
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Untitled
Abstract: No abstract text available
Text: 35E D Bi Ö23tj320 001703b 5 WkSIP. NPN Silicon RF Transistor oj _ SIEMENS/ SPCL-, SEMICONDS _/a B F R 106 _ _ • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23tj320
001703b
-F1219
OT-23
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Untitled
Abstract: No abstract text available
Text: 32E D • ô 2 3 b 3 2 0 Q Q lb B S Í NPN Silicon High-Voltage Transistor S IE M E N S / • • • • • SPCL-. □ H S IP BFN 22 SEMICONDS Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage
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Q62702-F596
Q62702-F1024
103mA
E3b32Q
BFN22
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Untitled
Abstract: No abstract text available
Text: T Silicon RF Switching Diode 32E D • 023b32Q Q01b4bb 3 n-iz BA 582 I SIP SIEMENS/ SPCL-, SEMICONDS • Low-loss VHF band switch for TV/VTR tuners Cathode Type Marking Ordering code taped Package BA 582 blue/S Q62702-A829 SOD-123 Maximum Ratings Parameter
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023b32Q
Q01b4bb
Q62702-A829
OD-123
23b320
001b4b7
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BCX70J
Abstract: No abstract text available
Text: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz
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A23b32G
BCW60
BCX70
102kHz
BCX70J
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Untitled
Abstract: No abstract text available
Text: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V
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fl23b320
GG171Q3
Q62702-S510
00A/JUS
00A//JS
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Untitled
Abstract: No abstract text available
Text: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance
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123b32Q
-240V
Q62702-S653
23b320
00170e
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Untitled
Abstract: No abstract text available
Text: 35E D • ê23b32Q QQlbSTQ S « S I P Silicon Tuning Diode B B 512 SIEMENS/ SPCL-, SEMICONDS _ t 07-19 • For AM tuning applications • Specified tuning range 1.8 V Type Marking Ordering code taped Package BB 512 white/M Q62702-A479 SOD-123 Maximum Ratings
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23b32Q
Q62702-A479
OD-123
A23b32D
001bS71
T-07-19
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BF799
Abstract: No abstract text available
Text: T - NPN Silicon RF Transistor 32E D • 21-17 ' BF799 Ô23b320 OülbVflM b « S I P SIEMENS/ SPCLi SEMICONDS • • Suitable for broadband R F amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners
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BF799
23b320
Q62702-F788
Q62702-F935
fl23b3EG
BF799
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô23b320 QDlb77D b « S I P NPN Silicon RFTransistor t ^ -3 I—»7 BF 770 A SIEMENS/ SPCLi SEMICONDS • • Low-noise broadband transistor for frequencies up to 2 GHz at collector currents up to 30 mA Specially suitable for IF amplifiers in TV-sat tuners
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23b320
QDlb77D
Q62702-F1068
Q62702-F1080
023b32Q
QQlb772
BF770A
T-31-17
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