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    SPECTRE MODEL Search Results

    SPECTRE MODEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    SPECTRE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Spectre RT Industrial Routers ERT31x Series PRODUCT FEATURES • • • • • • The Spectre RT industrial router connects Ethernet equipment in tough environments where office-grade equipment can’t handle the job. With Ethernet, USB, I/O and auxiliary ports it’s a flexible device with the built-in


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    PDF ERT31x RS232, IEC60068-2-27, IEC60068-2-6, 10-500Hz,

    TRANSISTOR+3GW

    Abstract: GSM router
    Text: Cellular Router - Wi-Fi Spectre 3G-W Series PRODUCT FEATURES • • • • • • The Spectre 3G-W cellular router is a single box solution that provides local M2M network connectivity via its built-in Wi-Fi hotspot, Ethernet 10/100 and I/O ports and connects to the Internet via CDMA and HSPA+


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    PDF RS232, 55022/B TRANSISTOR+3GW GSM router

    GSM router

    Abstract: No abstract text available
    Text: B&B ELECTRONICS RT3G-3xx_R000_4012ds 2012 B&B Electronics. All rights reserved SPECTRE 3G Cellular Router • Designed for M2M applications  Modbus TCP to Modbus RTU  Modular design to fit application requirements  Dual SIM Cards for redundant backhaul


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    PDF 4012ds upload/14 RS232, GSM router

    GSM router

    Abstract: No abstract text available
    Text: B&B ELECTRONICS RT3G-3xx_R000_4012ds 2012 B&B Electronics. All rights reserved SPECTRE 3G Cellular Router • Designed for M2M applications  Modbus TCP to Modbus RTU  Modular design to fit application requirements  Dual SIM Cards for redundant backhaul


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    PDF 4012ds upload/14 RS232, GSM router

    4017c

    Abstract: ATMEL EEPROM 256 scmos3ee Wafer diode 81 bp
    Text: SILICON SCMOS3EE: Digital and Mixedsignal 0.5 µm CMOS with High Voltage and EEPROM Capabilities FOUNDRY SOLUTIONS FOR CONSUMER, INDUSTRIAL AND AUTOMOTIVE APPLICATIONS. Atmel SCMOS3EE is a 0.5 µm digital and mixed-signal CMOS technology with optional functions, including


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    PDF 4017C-FOUN-09/04/600 4017c ATMEL EEPROM 256 scmos3ee Wafer diode 81 bp

    analog bipolar DRIVER

    Abstract: BICMOS ATMEL CORPORATION
    Text: SILICON BiCMOS2: Complex Mixed-signal 1.0 µm BiCMOS Technology FOUNDRY SOLUTIONS FOR TELECOM, RF AUDIO OR VIDEO APPLICATIONS. Atmel BiCMOS2 is a 1.0 µm Bipolar and CMOS merged technology. It is well suited for complex mixed-signal processing, as it offers designers the possibility of using


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    PDF 4025B-FOUN-09/04/600 analog bipolar DRIVER BICMOS ATMEL CORPORATION

    Wafer

    Abstract: No abstract text available
    Text: SILICON SCMOS3E: Digital and Mixed-signal 0.5 µm CMOS - EPROM/OTP High Temperature Capability FOUNDRY SOLUTIONS FOR CONSUMER, INDUSTRIAL, AUTOMOTIVE AND HARSH ENVIRONMENT APPLICATIONS. Atmel SCMOS3E is a 0.5 µm digital and mixed-signal CMOS technology, with optional functions including


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    PDF 4024B-FOUN-09/04/600 Wafer

    bsim3 model

    Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
    Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications


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    180-nm

    Abstract: 180NM mos CMOS/0.18-um CMOS technology
    Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Semiconductor solutions offers a Highlights leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features: •


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    PDF 180-nm TGD01612-USEN-02 180NM mos CMOS/0.18-um CMOS technology

    transistor C640

    Abstract: transistor c640 npn c640 transistor START499 START499TR transistor bf 171
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


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    PDF START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor c640 npn c640 transistor START499TR transistor bf 171

    BF 295

    Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


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    PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz BF 295 C785 transistor BF295 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740

    180NM mos

    Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
    Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS


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    PDF 180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology

    transistor bf 968

    Abstract: transistor BF 506 832E-3
    Text: START540 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70


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    PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 transistor bf 968 transistor BF 506 832E-3

    SOT343 C5

    Abstract: SPICE 2G6 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


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    PDF START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR

    transistor C640

    Abstract: c640 transistor transistor c640 npn st P 1806 BF 235 RC 7535 bipolar transistor 2.4 ghz s-parameter bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier START499
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


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    PDF START499 42GHz OT343 START499TR START499 OT343 transistor C640 c640 transistor transistor c640 npn st P 1806 BF 235 RC 7535 bipolar transistor 2.4 ghz s-parameter bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier

    bsim3v3

    Abstract: C08p
    Text: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells


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    130nm CMOS

    Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
    Text: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:


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    PDF 130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR

    Wireless Integrated Circuits

    Abstract: Peregrine SP6T CATV DISTRIBUTION NETWORK PE4256 microwave transceiver 3ghz pin photodetector flip chip Germanium "Wireless Integrated Circuits"
    Text: Semiconductor Technology Integration-by-parts: An approach to the RFIC market One semiconductor manufacturer is applying a basic concept to wireless integrated circuits, starting at the antenna rather than the baseband side for its integration efforts. By Dan Nobbe


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    transistor C640

    Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


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    PDF START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor bf 179 transistor c640 npn START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368

    C785 transistor

    Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


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    PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz C785 transistor transistor C740 BF 245 B simulation model BF 245 A spice transistor c785

    TRANSISTOR C436

    Abstract: 155E-15 L005 transistor
    Text: START420 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family


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    PDF START420 OT343 OT343 START420TR START420 500MHz-5GHz TRANSISTOR C436 155E-15 L005 transistor

    Untitled

    Abstract: No abstract text available
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


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    PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 500MHz-5GHz

    transformo

    Abstract: No abstract text available
    Text: ASPECTS RÉCENTS d e l’ ° ACOUSTIQUE SOUS-MARINE RUSSE Mikhaïl GALAKTIONOV Sur la couverture : Plat 1 : Modélisation du champ acoustique 400 Hz dans les conditions “chenal double”, la source est dans le chenal supérieur. dos plat : Modélisation du champ acoustique (400 Hz) dans les conditions “chenal


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    circuit integre

    Abstract: No abstract text available
    Text: CONDENSATEURS CERAM1QUE FLUIDISES CLASSE 2 DIPPED CERAMIC CAPACITORS CLASS 2 TCN 72 a TCN 80 Moddle normalise/Standard model CN 72-1 CN 72-5 CN 73-1 CN 73-5 CN 74-5 CN 75-5 CN 76-5 CN 77-1 CN 77-5 CN 78-1 CN 78-5 CN 79-5 CN 80-5 Appellation commerciale/Commercial type


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    PDF 12C1F circuit integre