SPEED PHOTO DIODE Search Results
SPEED PHOTO DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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CUZ6V8 |
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Zener Diode, 6.8 V, USC |
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CEZ5V6 |
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Zener Diode, 5.6 V, ESC |
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CUZ6V2 |
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Zener Diode, 6.2 V, USC |
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CUZ30V |
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Zener Diode, 30 V, USC |
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SPEED PHOTO DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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nec 2741
Abstract: PS2741
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PS2741 PS2741 PS2741-E4 PS2741-F4 PS2741-E3, PS2741-F3, nec 2741 | |
PS2006
Abstract: PS2006-1 5082-4350
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PS2006, PS2006 PS2006/PS2006( PS2006-1 5082-4350 | |
TPS808
Abstract: TLN107A
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TPS808 TPS808 900mm TLN107A, TLN107A | |
TLN107A
Abstract: TPS806 photo diode amplifier TLN107
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TPS806 TPS806 900mm TLN107A, TLN107A photo diode amplifier TLN107 | |
TPS805
Abstract: TLN107A
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TPS805 TPS805 900nm TLN107A, TLN107A | |
Contextual Info: TO SHIBA TPS808 TOSHIBA PHOTO IC PHOTO IC FOR PHOTO INTERRUPTER SILICON EPITAXIAL PLANAR TPS808 U nit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • +0 2 . 4 + 0.3 TPS808 is a photo IC integrating photo diode, am plifier circuit 3 -0 .2 |
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TPS808 TPS808 900mm TLN107A, | |
Contextual Info: TOSHIBA TPS805 TOSHIBA PHOTO IC PHOTO IC FOR PHOTO INTERRUPTER SILICON EPITAXIAL PLANAR TPS80 5 Unit in mm 4 PHOTOELECTRIC COUNTER LhJ POSITION AND ROTATIONAL SPEED SENSOR +o +o 4 .4 -0 .2 • TPS805 is a photo IC integrating photo diode, amplifier circuit |
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TPS805 TPS80 TPS805 900nm TLN107A, TLN107A | |
laser diode for rw drive
Abstract: NJL8130R I-V amplifier
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NJL8130R NJL8130R laser diode for rw drive I-V amplifier | |
650nm laser diode highspeed
Abstract: NJL8131R I-V amplifier
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NJL8131R NJL8131R 650nm laser diode highspeed I-V amplifier | |
TPS807
Abstract: TLN107A
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TPS807 TPS807 900nm TLN107A, TLN107A | |
Contextual Info: T O SH IB A TPS808 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS808 Unit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • TPS808 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip. |
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TPS808 TPS808 900mm TLN107A, TLN107A | |
Contextual Info: T O SH IB A TPS806 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS806 U nit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR 4 ,4 -1-0 - 0.2 +0 2.4 ± 0.3 TPS806 is a photo IC integrating photo diode, amplifier circuit |
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TPS806 TPS806 900mm TLN107A, TLN107A | |
Contextual Info: TOSHIBA TPS806 TOSHIBA PHOTO IC • ■ SILICON EPITAXIAL PLANAR MF PHOTO IC FOR PHOTO INTERRUPTER U nit in mm PHOTOELECTRIC COUNTER p 47 +0 POSITION AND ROTATIONAL SPEED SENSOR 4 .4 -0 .2 +0 2.4 ±0.3 • TPS806 is a photo IC integrating photo diode, amplifier circuit |
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TPS806 900mm TLN107A, TLN107A TPS806 | |
Contextual Info: TOSHIBA TPS807 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR T• P■ <MF; R f l 7m PHOTO IC FOR PHOTO INTERRUPTER Unit in mm 4 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR +0 4.4 - 0 .2 • TPS807 is a photo IC integrating photo diode, amplifier circuit |
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TPS807 TLN107A, TLN107A 900nm TPS807 | |
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TPS807Contextual Info: T O SH IB A TPS807 TO SH IBA PHOTO IC SILICON EPITAXIAL PLANAR TPS807 PHOTO IC FOR PHOTO INTERRUPTER U n it in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • TPS807 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip. |
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TPS807 TPS807 900nm TLN107A, TLN107A | |
TPS805Contextual Info: T O SH IB A TPS805 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS805 Unit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • • • • • TPS805 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip. |
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TPS805 TPS805 900nm TLN107A, TLN107A Dis85 | |
Contextual Info: DATA SHEET NEC PHOTO DIODE ELECTRON DEVICE PH310 PLASTIC MOLDED PIN PHOTO DIODE NEPOC SERIES DESCRIPTION PH310 is a photo diode w ith PIN structure. It has a wide ^ r î^ ll ; i:; ?; i; i:; ?; ?; ?; ?; ?Í i:>: photo-receiving area and high speed response enabling applica |
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PH310 PH310 | |
Contextual Info: Photo Diode Product No: MTD5010N Peak Sensitivity Wavelength: 850nm The MTD5010N is a photo diode in a TO-18 metal can domed package. It is well suited for high reliability and high speed applications. FEATURES APPLICATIONS > Ultra High Speed > Optical Switches |
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MTD5010N 850nm MTD5010N | |
Contextual Info: Photo Diode Product No: MTD5010W Peak Sensitivity Wavelength: 850nm The MTD5010W is a photo diode in a TO-18 metal can flat top package. It is well suited for high reliability and high speed applications. FEATURES APPLICATIONS > Ultra High Speed > Optical Switches |
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MTD5010W 850nm MTD5010W | |
PH302Contextual Info: NEC PHOTO DIODE ELECTRON DEVICE PH302 PLASTIC MOLDED PIN PHOTO DIODE -NEPOC SERIES— DESCRIPTION PH302 is a photo diode with PIN structure. It has a wide photo-receiving area and high speed response enabling applications for various remote controlling equipments. The resin material itself used for the package has |
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PH302 PH302 | |
Contextual Info: PHOTO IC Photo IC for laser beam synchronous detection S9703 series High sensitivity, high-speed response S9703 series photo IC uses a single-element high-speed PIN photodiode designed for laser beam synchronous detection. The current amplifier is available with two gain levels 6 times and 20 times according to laser power to be used. Hamamatsu also provides S9684 series photo IC that |
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S9703 S9684 S9703) S9703-01) SE-171 KPIC1058E01 | |
PD15-22C
Abstract: IS09001
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IS09001 QS9000 PD15-22C PD15-22C | |
dvd laser diode 10 pin 700 mwContextual Info: NJL6202R-1 HIGH SPEED PIN PHOTO DIODE GENERAL DESCRIPTION OUTLINE typ. Unit : mm Active area: 0.7X0.7mm The NJL6202R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast 1.16 ±0.15 0.9 ±0.15 1.0 0.5 ±0.15 0.3 1.8 ±0.15 |
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NJL6202R-1 NJL6202R-1 at1-99% 780nm/650nm 300MHz 780nm 350MHz 650nm dvd laser diode 10 pin 700 mw | |
650-nm
Abstract: PH533
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PH533 PH533 650-nm |