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    SPP04 Search Results

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    SPP04 Price and Stock

    Advanced Thermal Solutions Inc ATS-PP-04

    HEATSINK BRASS PUSH PIN 12MM
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    DigiKey ATS-PP-04 Bulk 3,814 1
    • 1 $0.97
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    Mouser Electronics ATS-PP-04 839
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    New Advantage Corporation ATS-PP-04 5,000 1
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    Infineon Technologies AG SPP04N80C3XKSA1

    MOSFET N-CH 800V 4A TO220-3
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    DigiKey SPP04N80C3XKSA1 Tube 430 1
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    Avnet Americas SPP04N80C3XKSA1 Tube 15 Weeks 500
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    Mouser Electronics SPP04N80C3XKSA1 500
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    Verical SPP04N80C3XKSA1 4,420 10
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    Arrow Electronics SPP04N80C3XKSA1 4,423 15 Weeks 1
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    Newark SPP04N80C3XKSA1 Bulk 499 1
    • 1 $1.52
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    Rochester Electronics SPP04N80C3XKSA1 1
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    EBV Elektronik SPP04N80C3XKSA1 16 Weeks 500
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    Rochester Electronics LLC SPP04N60C2

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60C2 Bulk 799
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    Rochester Electronics LLC SPP04N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60S5 Bulk 452
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    Infineon Technologies AG SPP04N80C3XK

    MOSFET N-CH 800V 4A TO220-3
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    Find more SPP04 price and stock on Findchips.com

    SPP04 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP04N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N50C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 4.5A TO-220AB Original PDF
    SPP04N50C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP04N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Amp., 650V 4.5A 50W, MOS-FET N-Channel enhanced Original PDF
    SPP04N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 4.5A TO-220AB Original PDF
    SPP04N60C3XKSA1 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 4.5A TO-220 Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP04N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP04N60S5BKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-220 Original PDF
    SPP04N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 1,300.0 mOhm; ID(max) @ TC=25°C: 4.0 A; IDpuls (max): 12.0 A; Original PDF
    SPP04N80C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N80C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 4A TO-220AB Original PDF

    SPP04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    04N80C3

    Abstract: JESD22 PG-TO220-3 SPP04N80C3
    Text: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 JESD22 PG-TO220-3 SPP04N80C3

    04n50c3

    Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3

    04N80C3

    Abstract: 04n80c kW10
    Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N80C3 SPA04N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA04N80C3 04N80C3 04N80C3 04n80c kW10

    04n60c2

    Abstract: spp04n60c2 04N60C
    Text: Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C2 04n60c2 04N60C

    SPP04N60S5

    Abstract: 04n60s5
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 PG-TO220-3-1, SPP04N60S5 04n60s5

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Text: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60c3

    Abstract: 04N60C DSA0031699
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		PDF SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699

    04n60s5

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 04n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201

    04N80C3

    Abstract: spp04n80c3
    Text: SPP04N80C3 SPA04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4433 04N80C3

    04N80C3

    Abstract: SPA04N80C3
    Text: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4433 04N80C3 SPA04N80C3

    5A20V

    Abstract: No abstract text available
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5 5A20V

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n50c3

    Abstract: SPA04N50C3
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SPA04N50C3

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331

    04N80C3

    Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240
    Text: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4433 04N80C3 04N80C3 SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240

    04N80C3

    Abstract: 04n80
    Text: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 04n80

    BV 20100

    Abstract: 2N2369AU 2N2907AUB
    Text: SURFACE MOUNT DEVICES PACKAGE PEAK LCC-28 VCE sa l DEVICE bvceo »C h FE TYPE VOLTS AMPS M IN/M AX SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 SPP0422 SPP0423 SPP0425 80 100 150 80 100 150 80 100 150 80 100 150 2.0 2.0 2.0 5.0


    OCR Scan     		PDF LCC-28 SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 BV 20100 2N2369AU 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR SURFACE MOUNT BIPOLAR TRANSISTORS - PNP PACKAGE 28 PIN LEADLESS CHIP CARRIER CERAMIC DEVICE TYPE PEAK BVc e O VOLTS •c AMPS I fe min/max 'C @ VCE A V VCE sat max VOLTS 'c @ ' b A A SPP0402 40 2.0 20-100 1.0/5.0 0.5 2.0/0.2 SPP0403 60 2.0 20-100


    OCR Scan     		PDF SPP0402 SPP0403 SPP0404 SPP0405 SPP0406 SPP0407 SPP0408 SPP0409 SPP0416 SPP0417

    04n60s5

    Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
    Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s


    OCR Scan     		PDF SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF