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    SPP04 Search Results

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    SPP04 Price and Stock

    Rochester Electronics LLC SPP04N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60S5 Bulk 42,120 371
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    Rochester Electronics LLC SPP04N60C2

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60C2 Bulk 19,000 656
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    Rochester Electronics LLC SPP04N60C3XKSA1

    LOW POWER_LEGACY
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    DigiKey SPP04N60C3XKSA1 Bulk 4,500 247
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    Infineon Technologies AG SPP04N80C3XK

    MOSFET N-CH 800V 4A TO220-3
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    Grayhill Inc 62B22-SPP-040C

    ROTARY ENCODER OPTICAL 16PPR
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    DigiKey 62B22-SPP-040C Bulk 25
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    Avnet Americas 62B22-SPP-040C Bulk 111 Weeks 25
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    Newark 62B22-SPP-040C Bulk 1
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    RS 62B22-SPP-040C Bulk 11 Weeks 25
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    Sager 62B22-SPP-040C 1
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    Find more SPP04 price and stock on Findchips.com

    SPP04 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP04N50C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N50C3HKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 4.5A TO-220AB Original PDF
    SPP04N50C3XKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP04N60C2
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C2
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3
    		Infineon Technologies Cool MOS Power Amp., 650V 4.5A 50W, MOS-FET N-Channel enhanced Original PDF
    SPP04N60C3HKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 4.5A TO-220AB Original PDF
    SPP04N60C3XKSA1
    		Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 4.5A TO-220 Original PDF
    SPP04N60S5
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5
    		Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60S5
    		Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP04N60S5
    		Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP04N60S5BKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-220 Original PDF
    SPP04N80C3
    		Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 1,300.0 mOhm; ID(max) @ TC=25°C: 4.0 A; IDpuls (max): 12.0 A; Original PDF
    SPP04N80C3
    		Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N80C3XKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 4A TO-220AB Original PDF

    SPP04 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BV 20100

    Abstract: 2N2369AU 2N2907AUB
    Contextual Info: SURFACE MOUNT DEVICES PACKAGE PEAK LCC-28 VCE sa l DEVICE bvceo »C h FE TYPE VOLTS AMPS M IN/M AX SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 SPP0422 SPP0423 SPP0425 80 100 150 80 100 150 80 100 150 80 100 150 2.0 2.0 2.0 5.0


    OCR Scan     		LCC-28 SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 BV 20100 2N2369AU 2N2907AUB PDF

    Contextual Info: BIPOLAR SURFACE MOUNT BIPOLAR TRANSISTORS - PNP PACKAGE 28 PIN LEADLESS CHIP CARRIER CERAMIC DEVICE TYPE PEAK BVc e O VOLTS •c AMPS I fe min/max 'C @ VCE A V VCE sat max VOLTS 'c @ ' b A A SPP0402 40 2.0 20-100 1.0/5.0 0.5 2.0/0.2 SPP0403 60 2.0 20-100


    OCR Scan     		SPP0402 SPP0403 SPP0404 SPP0405 SPP0406 SPP0407 SPP0408 SPP0409 SPP0416 SPP0417 PDF

    04N80C3

    Abstract: JESD22 PG-TO220-3 SPP04N80C3
    Contextual Info: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 JESD22 PG-TO220-3 SPP04N80C3 PDF

    04n50c3

    Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
    Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Contextual Info: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3 PDF

    04N80C3

    Abstract: 04n80c kW10
    Contextual Info: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA04N80C3 04N80C3 04N80C3 04n80c kW10 PDF

    04n60c2

    Abstract: spp04n60c2 04N60C
    Contextual Info: Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C2 04n60c2 04N60C PDF

    SPP04N60S5

    Abstract: 04n60s5
    Contextual Info: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 PG-TO220-3-1, SPP04N60S5 04n60s5 PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD PDF

    04n60s5

    Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
    Contextual Info: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s


    OCR Scan     		SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF PDF

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C PDF

    04n60c3

    Contextual Info: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 PDF

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Contextual Info: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 PDF

    04n60c3

    Abstract: 04N60C DSA0031699
    Contextual Info: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699 PDF

    Contextual Info: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201 PDF

    04N80C3

    Abstract: spp04n80c3
    Contextual Info: SPP04N80C3 SPA04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4433 04N80C3 PDF

    04n80

    Abstract: 04N80C3 SPP04N80C3
    Contextual Info: SPP04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated


    Original     		SPP04N80C3 P-TO220-3-1 Q67040-S4433 04N80C3 04n80 04N80C3 SPP04N80C3 PDF

    04N80C3

    Abstract: SPA04N80C3
    Contextual Info: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4433 04N80C3 SPA04N80C3 PDF

    5A20V

    Contextual Info: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5 5A20V PDF

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Contextual Info: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 PDF

    04n50c3

    Abstract: SPA04N50C3
    Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SPA04N50C3 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 PDF

    04N80C3

    Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240
    Contextual Info: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4433 04N80C3 04N80C3 SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240 PDF

    04N80C3

    Abstract: 04n80
    Contextual Info: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 04n80 PDF