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    SPP07 Search Results

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    SPP07 Price and Stock

    Infineon Technologies AG SPP07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60C3XKSA1 Tube 577 1
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    Mouser Electronics SPP07N60C3XKSA1 896
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    Newark SPP07N60C3XKSA1 Bulk 1,636 1
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    Rochester Electronics SPP07N60C3XKSA1 36 1
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    EBV Elektronik SPP07N60C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPP07N60S5

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60S5 Tube 500
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    Ameya Holding Limited SPP07N60S5 1,668
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    ComSIT USA SPP07N60S5 100
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    Velocity Electronics SPP07N60S5 194
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    Infineon Technologies AG SPP07N60C3HKSA1

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60C3HKSA1 Tube 500
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    Infineon Technologies AG SPP07N60S5XKSA1

    LOW POWER_LEGACY
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    Infineon Technologies AG SPP07N60S5HKSA1

    LOW POWER_LEGACY
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    Find more SPP07 price and stock on Findchips.com

    SPP07 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP07N600S5 Infineon Technologies N-CHANNEL POWER MOSFET Original PDF
    SPP07N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original PDF
    SPP07N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60C3 Infineon Technologies Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced Original PDF
    SPP07N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original PDF
    SPP07N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO-220AB Original PDF
    SPP07N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220AB Original PDF
    SPP07N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 700.0 mOhm; ID(max) @ TC=25°C: 6.6 A; IDpuls (max): 17.0 A; Original PDF
    SPP07N60CFDHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 6.6A TO-220 Original PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP07N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP07N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP07N65C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 650.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; Original PDF
    SPP07N65C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N65C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220 Original PDF

    SPP07 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60

    Abstract: 07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3

    07N60C2

    Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c
    Text: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated


    Original     		PDF SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 Q67040-S4309 07N60C2 s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c

    07n65c3

    Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07n65c3 PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    07N60S5

    Abstract: No abstract text available
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262-3 07N60S5

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3-1 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262

    07N60C3

    Abstract: 07n60c
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    07N60CFD

    Abstract: 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66
    Text: SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


    Original     		PDF SPP07N60CFD PG-TO220 07N60CFD 07N60CFD 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 " ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


    Original     		PDF SPP07N60CFD PG-TO220 07N60CFD

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    Untitled

    Abstract: No abstract text available
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3

    07n60c3

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3

    07N65C3

    Abstract: 07N65
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07N65C3 07N65

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07n60s5

    Abstract: infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5
    Text: SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07n60s5 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5

    07n60s5

    Abstract: 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5
    Text: SPI07N60S5 SPP07N60S5, SPB07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 Q67040-S4172 07n60s5 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5

    TRANSISTOR SMD MARKING CODE 12w

    Abstract: smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55
    Text: SPP07N60C2 SPB07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated R DS on 0.6 W · Extreme dv/dt rated


    Original     		PDF SPP07N60C2 SPB07N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4309 07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60CFD

    Abstract: SPP07N60CFD 07n60c 07N60 JESD22 PG-TO-220-3-1 coolmos cfd
    Text: SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


    Original     		PDF SPP07N60CFD PG-TO220 07N60CFD 07N60CFD SPP07N60CFD 07n60c 07N60 JESD22 PG-TO-220-3-1 coolmos cfd