SPRAGUE CT SERIES Search Results

2N4265

Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Contextual Info: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924

TP2222A

Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A
Contextual Info: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace­ m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,

elna rsh

Abstract: marcon capacitor capacitor cross reference Rubycon CE W ce04w Nichicon CE Aluminum Electrolytic Capacitors mepco capacitor Elna ce 85 Nichicon upr Elna ce 105
Contextual Info: Aluminum Electroiytic Capacitor Cross Reference ALUMINUM ELECTROLYTIC CAPACITO RS NIC SERIES NRE-L NRELS NRSA NRSS NRE-S NSR DESCRIPTION Radial, Low Profile Anti-solvent, 85°C Low Profile, Reduced Size Anti-Solvent, 85°C Radial, Current Size, Anti-Solvent, 85°C

Sprague extralytic

Abstract: 2N6925A 2N6924A DIODE ED 11 2n6924
Contextual Info: 2N6924 2N6924A 2N6925 2N6925A ^ General ^ ^ Semiconductor ^ - Industries, Inc. Switch HIGH POWER NPN TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features General Semi­

3360D

Abstract: uln series lN336 3330-T
Contextual Info: SPRAGUE/SEfllCOND 8514019 SPRAGUE/ 03 T> GROUP S E M I C O N D S / ICS 03E 04695 • f l S 13 f i S Q D ULN-3330D THROUGH ULN-3363T OPTOELECTRONIC SWITCHES ULN-3330, ULN-3360, AND ULN-3363 OPTOELECTRONIC SWITCHES FEATURES • Photodiode with: On-Chip Amplifier

Unitrode Linear Integrated Circuits Data and Application

Abstract: capacitor 0.1uF 50v Ceramic 199D226X0025DA1 UCC3918
Contextual Info: DN-87 Design Note UCC3918 “Low On-Resistance Hot Swap Power Manager”, Evaluation Board, Schematic, and List of Materials By Dave Olson INTRODUCTION ABSOLUTE MAXIMUM RATINGS The UCC3918 evaluation kit allows the designer to evaluate the performance of the UCC3918 Low

GAE19000

Abstract: GAL10 GAJ8 SG-600A gal15000 GAL8R200 GAJ6R100 GAJ6
Contextual Info: 0514403 0000300 O SPRAGUE GOODÍTifin > o 5 " -a 3 - o SPRAGUE GOODMAN ELEKS Adjust torque: 1.5 to 7.0 oz.-in. Temperature coefficient: + 1 0 ± 10 PPM/°C, measured over temperature range of - 3 0 °C to 80 °C at 1 MHz and 50% R.H. Typical Q: 8,000 at 1 MHz, 6,000 at 50 MHz, 4,000 at

Unitrode Linear Integrated Circuits Data and Application

Abstract: unitrode Applications Note 199D226X0025DA1
Contextual Info: DN-87 Design Note UCC3918 “Low On-Resistance Hot Swap Power Manager”, Evaluation Board, Schematic, and List of Materials By Dave Olson INTRODUCTION ABSOLUTE MAXIMUM RATINGS The UCC3918 evaluation kit allows the designer to evaluate the performance of the UCC3918 Low

transistor smd z9

Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206
Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

ti c11b

Contextual Info: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

JESD22-C101A

Abstract: AGR09060GF AGR09060GU 06F150
Contextual Info: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

PT6724

Abstract: PT6725 nichicon SE
Contextual Info: PT6725 Series 13 Amp 12V Input Adjustable Integrated Switching Regulator SLTS102 Revised 6/30/2000 e g Packag in v a S e c New Spa The PT6725 is a new series of high-performance, 13 Amp Integrated Switching Regulators (ISRs) housed in a unique, space-saving 17-pin SIP

Hall Effect 3 pin ugn

Abstract: UGN3019T UGN HALL uln series 3020t UGN-3020T UGN-3019T uln3020 UGN-3501M HALL UGN
Contextual Info: H A LL EFFECT IN TEG R ATED CIRCUITS SPRAGUE SERIES 3000 M A G N ET IC A LLY -A C T IV A T ED SWITCHES TYPE U G N -3 2 0 1M , U G N /U G S -3 0 19 T, U G N -3 2 0 3 M , and UGN/UGS-3020T D IGITAL SENSORS CHARACTERISTICS These devices are m agnetically-activated electronic sw it­

motorola transistor 2N2907A

Abstract: a201 ic transistor av 29 transistor
Contextual Info: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application

RK73H2A10R0F

Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J
Contextual Info: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

100B100JW500X

Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A
Contextual Info: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

RK73H2A10R0F

Abstract: AGR09045GUM JESD22-C101A RF35 RM73B2b103j z24 mosfet
Contextual Info: Preliminary Data Sheet October 2004 AGR09045GUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

MQ-64

Contextual Info: SERIES 8126 SWITCHED-MODE POWER SUPPLY CONTROL CIRCUITS SERIES 8126 SG3526J, SG2526J AND SG1526J SWITCHED-MODE POWER SUPPLY CONTROL CIRCUITS FEATURES • 8 V t o 3 5 V O p e r a tio n • Dual 10 0 m A S o u r c e / S in k O u tp u ts • In te r n a l R e g u la to r

AGR09030GUM

Abstract: JESD22-C101A RF35
Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular