SQ231 Search Results
SQ231 Price and Stock
Vishay Siliconix SQ2318AES-T1_BE3MOSFET N-CH 40V 8A SOT23-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SQ2318AES-T1_BE3 | Reel | 33,000 | 3,000 |
|
Buy Now | |||||
Vishay Siliconix SQ2310ES-T1_BE3MOSFET N-CH 20V 6A SOT23-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SQ2310ES-T1_BE3 | Cut Tape | 24,803 | 1 |
|
Buy Now | |||||
Vishay Siliconix SQ2315ES-T1_GE3MOSFET P-CH 12V 5A SOT23-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SQ2315ES-T1_GE3 | Digi-Reel | 15,677 | 1 |
|
Buy Now | |||||
![]() |
SQ2315ES-T1_GE3 | 6,000 | 1 |
|
Buy Now | ||||||
Vishay Siliconix SQ2315ES-T1_BE3MOSFET P-CH 12V 5A SOT23-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SQ2315ES-T1_BE3 | Digi-Reel | 6,399 | 1 |
|
Buy Now | |||||
Vishay Siliconix SQ2318CES-T1_GE3MOSFET N-CH 40V 8A SOT23-3 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SQ2318CES-T1_GE3 | Cut Tape | 2,945 | 1 |
|
Buy Now |
SQ231 Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
SQ2310ES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 6A SOT23 | Original | 244.01KB | ||||
SQ2310ES-T1_BE3 | Vishay Siliconix | MOSFET N-CH 20V 6A SOT23-3 | Original | 244.02KB | 11 | |||
SQ2310ES-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SOT23 | Original | 10 | ||||
SQ2315ES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 12V SOT23 | Original | 289.23KB | ||||
SQ2318AES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 40V SOT23 | Original | 280.05KB | ||||
SQ2319ADS-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 40V 4.6A SOT23-3 | Original | 277.51KB | ||||
SQ2319ADS-T1_BE3 | Vishay Siliconix | MOSFET P-CH 40V 4.6A SOT23-3 | Original | 278.35KB | 11 | |||
SQ2319ES-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 4.6A TO-236 | Original | 10 |
SQ231 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
SQ2318ESContextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2318ES | |
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318ES AEC-Q101 2002/95/EC O-236 OT-23) SQ2318ES* OT-23 SQ2318ES-T1-GE3 2002/95/EC. 2002/95/EC | |
Contextual Info: New Product SQ2315ES Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc |
Original |
SQ2315ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2315ES OT-23 SQ2315ES-T1-GE3 11-Mar-11 | |
sq2310es
Abstract: SQ2310ES-T1-GE3
|
Original |
SQ2310ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2310ES* OT-23 SQ2310ES-T1-GE3 18-Jul-08 sq2310es SQ2310ES-T1-GE3 | |
SQ2319ES
Abstract: SQ2319ES-T1-GE3 2211
|
Original |
SQ2319ES 2002/95/EC AEC-Q101 O-236 OT-23) OT-23 SQ2319ES-T1-GE3 18-Jul-08 SQ2319ES SQ2319ES-T1-GE3 2211 | |
Contextual Info: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2315ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2315ES OT-23 SQ2315ES-T1-GE3 2011/65/EU 2002/95/EC. | |
SQ2315ESContextual Info: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2315ES AEC-Q101 2002/95/EC O-236 OT-23) OT-23 SQ2315ES-T1-GE3 2002/95/EC. 2002/95/EC SQ2315ES | |
Contextual Info: SQ2318AES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQ2318AES AN609, 6793u 2708u 0865m 6101m 0786m 3038m 9949m 02-Jun-14 | |
Contextual Info: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC |
Original |
SQ2315ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2315ES OT-23 SQ2315ES-T1-GE3 11-Mar-11 | |
tjm sot23Contextual Info: SQ2318ES Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC |
Original |
SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 11-Mar-11 tjm sot23 | |
Contextual Info: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2315ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2315ES OT-23 SQ2315ES-T1-GE3 11-Mar-11 | |
Si2319ES
Abstract: SQ2319ES-T1-GE3 SQ2319ES P-Channel TrenchFET Power MOSFET SOT-23 sd marking 8H S10 SOT23 MARKING 8h marking SQ2319
|
Original |
SQ2319ES 2002/95/EC AEC-Q101 O-236 OT-23) Si2319ES OT-23 SQ2319ES-T1-GE3 18-Jul-08 SQ2319ES-T1-GE3 SQ2319ES P-Channel TrenchFET Power MOSFET SOT-23 sd marking 8H S10 SOT23 MARKING 8h marking SQ2319 | |
Contextual Info: SQ2319ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.075 RDS(on) () at VGS = - 4.5 V 0.145 ID (A) - 4.6 Configuration Single TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 |
Original |
SQ2319ES AEC-Q101 2002/95/EC O-236 OT-23) OT-23 SQ2319ES-T1-GE3 2002/95/EC. 2002/95/EC | |
|
|||
Contextual Info: SQ2310ES_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
SQ2310ES AN609, 2561u 2488u 1910m 3084u 1343m 8678m 0307m 03-Jan-11 | |
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQ2310ES www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.5 V 0.042 ID (A) 6 Configuration Single |
Original |
SQ2310ES AEC-Q101 2002/95/EC O-236 OT-23) SQ2310ES* OT-23 SQ2310ES-T1-GE3 25electronic 2002/95/EC. | |
Contextual Info: SQ2315ES_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
SQ2315ES AN609, 9776u 6258u 9459u 7793m 3070m 1178m 4328m 02-Mar-11 | |
Contextual Info: SPICE Device Model SQ2318AES www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
SQ2318AES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQ2315ESContextual Info: New Product SQ2315ES Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc |
Original |
SQ2315ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2315ES OT-23 SQ2315ES-T1-GE3 18-Jul-08 | |
Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 11-Mar-11 | |
SQ2310ESContextual Info: SQ2310ES Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.5 V 0.042 ID (A) 6 Configuration Single D TO-236 (SOT-23) |
Original |
SQ2310ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2310ES* OT-23 SQ2310ES-T1-GE3 11-Mar-11 SQ2310ES | |
Contextual Info: SQ2319ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.075 RDS(on) () at VGS = - 4.5 V 0.145 ID (A) - 4.6 Configuration Single TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 |
Original |
SQ2319ES AEC-Q101 2002/95/EC O-236 OT-23) OT-23 SQ2319ES-T1-GE3 2002/95/EC. 2002/95/EC | |
SQ2319ESContextual Info: SQ2319ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.075 RDS(on) () at VGS = - 4.5 V 0.145 ID (A) - 4.6 Configuration Single TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 |
Original |
SQ2319ES O-236 OT-23) AEC-Q101 2002/95/EC OT-23 SQ2319ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2319ES |