SQD10 Search Results

Contextual Info: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested

Contextual Info: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance

Contextual Info: SPICE Device Model SQD100N03-3m4 www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

SQD100N03-3m4_RC

Contextual Info: SQD100N03-3m4_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SQD100N03-3m2L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

65113

Contextual Info: SQD100N04-3m6L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

f 0452 N-Channel MOSFET

Contextual Info: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V

Contextual Info: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V

Contextual Info: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330

Contextual Info: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested

Contextual Info: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330

Contextual Info: SPICE Device Model SQD100N03-3m2L www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SQD100N04-3m6_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SQD100N03-3m4 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0034 ID (A) • AEC-Q101 Qualifiedd 100

KTY87-205

Abstract: R40 AH philips kty87
Contextual Info: •i bbsa'm Ü03S733 417 ■ APX KTY87-205 N AMER PHILIPS/DISCRETE b ^E D SILICON TEMPERATURE SENSORS The KTY87 are high precision temperature sensors w ith a positive temperature coefficient o f resistance fo r temperature measuring and temperature control. I n the temperature range 10 °C to 110 °C the

DPAK/TO-252

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the

SQJ469ep

Abstract: SQ4483BE
Contextual Info: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of

sq4435

Abstract: SQP120N10-09
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.

BYD33Q

Abstract: BYW97G BYM26G BYV95B BYV97G sod81 SOD64 Package sod-87
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers FAST SOFT-RECOVERY CONTROLLED-AVALANCHE RECTIFIERS ratings type number V RRM max. V characteristics Vr max. (V) ' f (a v ) 'fsm

BYD77B

Abstract: byv28 PHILIPS BYV27 SOD87 BYD73B BYD73D BYD73F BYD73G sod81
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers ULTRA-FAST LOW-LOSS CONTROLLED-AVALANCHE RECTIFIERS OVERVIEW leaded SOD64 3.5 A SOD91 0.55 A surface-mount SOD87 SOD106 1.9 A

B2W03

Abstract: BZG04-8V2
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers VOLTAGE REGULATOR DIODES LEADED BZD23 BZT03 B2W03 p 2 package Vz range11 V) P to. T .p r ZS M (W) (°C) (W) 3.6 to 270 7.5 to 270

smd diode byg

Abstract: smd diode byg 20 BYG90-40 MARKING js smd F70 Package smd diode 3l BYG90-20 BYG90-30 byg 100 diode smd byg
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diodes BYG90-40 series FEATURES • Low switching losses • Capability of absorbing very high surge current cathode identifier • Fast recovery time • Guard ring protected • Plastic SMD package.

Alc201A

Abstract: s m r707 f8313 ALC201 OZ-165 SD socket chematic Realtek RTL8100c schematic schematic diagram vga ati p834 W83518D
Contextual Info: Schematic Diagrams System Block Diagram 888E S C H E M A T IC CK TITAN Clocking OB ILITY M9 preW PG10 Intel gnt# ó PREQ1Í GNT#1 TSB43AB21 Pentiun 4 PREQ3# GNT#3 LAN RTL81ÛÛ /Northwood processor PREQ2# GNT#2 PGA478 DDR-SGRAM PCI1520 PG2,3 MINI PCI INT#A