SQD40 Search Results

IC A 3120

Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)

69064

Contextual Info: SQD40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET

Contextual Info: SQD40N10-25_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SQD40P10-40L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)

Contextual Info: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)

Contextual Info: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A)

Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)

Contextual Info: SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

SQD40N06-14L

Contextual Info: SQD40N06-14L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

SQD40P10-40L

Abstract: mosfet 4433
Contextual Info: SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V

Contextual Info: SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing

SQD40P10

Abstract: SQD40P10-40L-GE3 4433 mosfet mosfet 4433 SQD40P10-40L SQD40P10-40
Contextual Info: SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V

Contextual Info: SQD40N10-25 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model SQD40P10-40L www.vishay.com Vishay Siliconix P-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SQD40N10-25-GE3

Contextual Info: SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.029 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 60 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V

Contextual Info: SQD40N06-14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SQD400AA120

Contextual Info: TRANSISTOR MODULE SQD400AA120 UL;E76102 （M） SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: SPICE Device Model SQD40N10-25 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

702 TRANSISTOR

Abstract: SQD400AA100
Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

S11092

Contextual Info: SQD40P10-40L Vishay Siliconix Automotive P-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () at VGS = - 10 V 0.040 RDS(on) () at VGS = - 4.5 V 0.048 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET