SQJ912AEP Search Results
SQJ912AEP Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJ912AEP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 40V 30A PPAK SO-8 | Original | 195.25KB | |||
SQJ912AEP-T2_GE3 | Vishay Siliconix | DUAL N-CHANNEL 40-V (D-S) 175C M | Original | 647.1KB |
SQJ912AEP Price and Stock
Vishay Siliconix SQJ912AEP-T2_BE3MOSFET 2N-CH 40V 30A PPAK SO8 |
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SQJ912AEP-T2_BE3 | Reel | 3,000 |
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Vishay Siliconix SQJ912AEP-T1_GE3MOSFET 2N-CH 40V 30A PPAK SO8 |
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SQJ912AEP-T1_GE3 | Cut Tape |
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Vishay Siliconix SQJ912AEP-T2_GE3MOSFET 2N-CH 40V 30A PPAK SO8 |
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SQJ912AEP-T2_GE3 | Reel |
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Vishay Intertechnologies SQJ912AEP-T2_BE3Transistor MOSFET Array Dual N-Channel 40V 30A Automotive 8-Pin PowerPAK SO - Tape and Reel (Alt: SQJ912AEP-T2_BE3) |
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SQJ912AEP-T2_BE3 | Reel | 111 Weeks | 3,000 |
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Vishay Intertechnologies SQJ912AEP-T1_GE3Mosfet, Dual, N-Ch, 40V, Powerpak So-8L Rohs Compliant: Yes |Vishay SQJ912AEP-T1_GE3 |
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SQJ912AEP-T1_GE3 | Cut Tape | 1 |
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SQJ912AEP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111 |
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SQJ912AEP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SQJ912AEP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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SQJ912AEP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111 |
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SQJ912AEP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ912AEP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ912AEP AN609, 5992m 7115u 6663m 7026m 8570m 3175m 0115u 23-Apr-14 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
Contextual Info: Vishay Intertechnology, Inc. Automotive Body Electronics One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Body Electronics More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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NTCS6030E3. SQS840EN AEC-Q200 AEC-Q101 AEC-Q200-qualified VMN-MS6980-1411-AUBO | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |