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    SQJ960EP Price and Stock

    Vishay Siliconix SQJ960EP-T1_GE3

    MOSFET 2N-CH 60V 8A PPAK SO8
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    DigiKey SQJ960EP-T1_GE3 Reel 3,000 3,000
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    SQJ960EP-T1_GE3 Cut Tape 1,181 1
    • 1 $2.09
    • 10 $1.734
    • 100 $1.38
    • 1000 $0.99079
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    SQJ960EP-T1_GE3 Digi-Reel 1
    • 1 $2.09
    • 10 $1.734
    • 100 $1.38
    • 1000 $0.99079
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    Vishay Intertechnologies SQJ960EP-T1_GE3

    Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ960EP-T1_GE3)
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    Avnet Americas SQJ960EP-T1_GE3 Reel 20 Weeks 3,000
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    SQJ960EP-T1_GE3 Reel 3,000
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    Mouser Electronics SQJ960EP-T1_GE3 79,715
    • 1 $2.09
    • 10 $1.74
    • 100 $1.38
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    Newark SQJ960EP-T1_GE3 Reel 3,000
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    Vishay Intertechnologies SQJ960EP-T1-GE3

    Trans MOSFET N-CH 60V 8A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
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    Verical SQJ960EP-T1-GE3 3,000 3,000
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    TTI SQJ960EP-T1-GE3 Reel 3,000
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    Chip1Stop SQJ960EP-T1-GE3 3,000
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    EBV Elektronik SQJ960EP-T1-GE3 26 Weeks 3,000
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    SQJ960EP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SQJ960EP-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 8A 8SO Original PDF
    SQJ960EP-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 8A Original PDF

    SQJ960EP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK


    Original     		PDF SQJ960EP AEC-Q101 SQJ960EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK


    Original     		PDF SQJ960EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ960EP 2002/95/EC AEC-Q101 SQJ960EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ960EP AEC-Q101 2002/95/EC SQJ960EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ960EP AEC-Q101 2002/95/EC SQJ960EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ960EP 2002/95/EC AEC-Q101 SQJ960EP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ960EP Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQJ960EP 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK


    Original     		PDF SQJ960EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ960EP AEC-Q101 2002/95/EC SQJ960EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ960EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQJ960EP AN609, 3581m 3403u 7364m 9824m 6985m 9008u 7570m 31-Mar-11

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original     		PDF VMN-PL0469-1505 sq4435 SQP120N10-09

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


    Original     		PDF AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		PDF AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309