MC 140 transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance
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BUK7614-55
SQT404
MC 140 transistor
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control
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BT136B
BT136BRepetitive
SQT404
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diode c550
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes PBYR20100CT, PBYR20100CTB series Schottky FEATURES • • • • • SYMBOL Low forward volt drop Fast switching Reverse surge capability
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PBYR20100CT,
PBYR20100CTB
PBYR20100CT
diode c550
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible
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PHP21N06LT,
PHB21N06LT
PHD21N06LT
PHP21N06LT
T0220AB)
PHB21N06LT
OT428
OT428
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A
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IRF640,
IRF640S
IRF640
T0220AB)
IRF640S
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP2N50E,
PHB2N50E,
PHD2N50E
PHP2N50E
T0220AB)
PHB2N50E
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy SYMBOL FEATURES • • • • • QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching
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PHP3N40E,
PHB3N40E,
PHD3N40E
PHP3N40E
PHD3N40E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for
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BUK563-60A
SQT404
SYMBOL00
BUK563-60A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-200A
SQT404
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transistor P7n
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP7N40E, PHB7N40E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance
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PHP7N40E,
PHB7N40E
PHP7N40E
T0220AB)
PHB7N40E
transistor P7n
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching
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PHP3N40E,
PHB3N40E,
PHD3N40E
PHP3N40E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged SYMBOL FEATURES • • • • • • BYW29EB, BYW29ED series QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability
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BYW29EB,
BYW29ED
BYW29EB
OT404
OT428
OT428
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diode BY229
Abstract: philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide
Text: Philips Semiconductors Power Diodes Selection Guide Schottky Rectifiers The trend towards lower supply voltages In computers and high speed logic circuits has produced a need for rectifiers with very low forward voltages. The 20 V/ 25 V range of power schottky diodes is intended for use in d.c. To d.c.
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10/700HS
BR211-140
BR211-160
BR211-180
BR211-200
BR211-220
BR211-240
BR211-260
BR211-280
BR211SM-140
diode BY229
philips Power MOSFET Selection Guide
BY229-400, fast recovery diode
Philips Semiconductors Power Diodes Selection Guide
BY229F800
by329x
BY359-1500
PBYR2040CT
BY459X-1500
Philips Semiconductors Selection Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance
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PHP130N03LT,
PHB130N03LT
PHP130N03LT
T0220AB)
PHP130NQ3LT,
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP7N40E, PHB7N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP7N40E,
PHB7N40E
PHP7N40E
PHB7N40E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK465-60H
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies
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SQT404
BUK462-60A
101is.
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11n06
Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance
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PHP11N06LT,
PHB11N06LT,
PHD11N06LT
PHP11N06LT
T0220AB)
11n06
11n06LT
transistor smd YR
11N06L
smd transistor 5c
SMD footprint design
smd transistor 5c l
5c smd transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP6N60E,
PHB6N60E
PHP6N60E
T0220AB)
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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PHB60N06T
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP3N60E, PHB3N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance
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PHP3N60E,
PHB3N60E
PHP3N60E
T0220AB)
PHB3N60E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK562-100A
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance
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PHP6N50E,
PHB6N50E
PHP6N50E
T0220AB)
PHB6N50E
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK464-200A
SQT404
777ali
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