SR SMD DIODE Search Results

Contextual Info: CERLED SMD Chip Detector Photo Pin Diode SR 10 DE-B -H* *RoHS-Compliant Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-B-DLF . Ideal for sensor applications.

KP-1608P1BT

Abstract: KP-1608P1C
Contextual Info: SMD INFRARED EMITTING DIODES & PHOTOTRANSISTORS Kingbright KM2520F3C03 Part No. KP-1608P1C Material Wavelength nm Po(mW/sr) @20mA *50mA Lens Type Min. Viewing Angle Typ. Dimension 2θ1/2 2mm KM2520F3C03 KM2520SF4C03 GaAs GaAlAs 940 880 2 6 30° *10 *15

diode Sr

Abstract: DTS1005 PerkinElmer light cerled
Contextual Info: D A T A S H E E T CERLED SMD Chip Detector Photo Pin Diode SR 10 DE-B Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-B-DLF . Ideal for sensor applications.

KPA-3010F3C

Abstract: KP-2012F3C
Contextual Info: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λP (nm) Lens Type KP-3216F3C(1206) Po (mW/sr) @20mA Min. Typ. View ing Angle KPA-3010F3C(1104) Dimension 2θ θ1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C GaAs 940 water clear

Contextual Info: CERLED SMD Chip Detector Photo Pin Diode SR 10 DE -H* *RoHS-Compliant Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-DLF . Ideal for sensor applications. Available on special order in 8 mm blister

smd 0805 infrared

Abstract: phototransistor smd
Contextual Info: SMD Infrared Emitting Diodes Electrical/Optical Data S h ap e Part No. 2.0x1.25x1.1mm 0805 XZTNI54W Material (Emitted Color) GaAs L en s Peak Wave Length (nm) Water Clear 940 Vf (V) If=20mA Po=(mW/sr) If=20mA *50mA Typ. Max. Min. Typ. 1.2 1.6 0.5 1 View ing

Contextual Info: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528AF3C Material λP (nm) Lens Type KM2520F3C03 Po (mW/sr) View ing @20mA *50mA Angle Min. Typ. Dimension 2θ θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear 0.4 1.2 70° KPL-3015SF4C

PerkinElmer Optoelectronics

Abstract: diode Sr DTS1005
Contextual Info: D A T A S H E E T CERLED SMD Chip Detector Photo Pin Diode SR 10 DE Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-DLF . Ideal for sensor applications. Available on special order in 8 mm blister

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF10LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 10A >SMD m s 'i'x > trr35n s >SR SÜ >DC/DC ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA RATINGS

BZV55C12

Abstract: zener sod-80 BZV55C16 43 smd SOT-89 BZV55C6V2 BZV55C15
Contextual Info: SMD Zener Diodes Continued 500m W POWER 1.0 w <Sr % SOD-80 CASE PREFERRED ZENER VOLTAGE INDUSTRY STANDARD j 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMPS Kingbright KP-3216 P ackage Dim ensions Features •3.2m m x1.6m m SM T LED. 1.1mm THICKNESS. CATHODE MARK ' SR : ANODE •LOW POW ERCONSUM PTION. •W ID E VIEWING ANGLE. I VÂ I V7/. •ID EAL FOR BACKLIGHT AND INDICATOR. •V A R IO U S COLORS AND LENS TYPE S AVAILABLE.

2C079

Contextual Info: Kingbright SMD INFRARED EM ITTIN G DIODES A P 1 6 0 8 F 3 C 0 6 0 3 A P 2 0 1 2 F 3 C (0 8 0 5 ) A P 3 2 1 6 F 3 C (1 2 0 6 ) A P A 3 0 1 0 F 3 C (1 1 0 4 ) S J* ? M aterial P art No. À P (nm ) Po (m W /sr) @ 20 m A Len s Type Min. | V iew ing A ngle Typ.

SR2030CT-G

Abstract: SR2040CT-G SR2050CT-G SR2060CT-G SR2080CT-G SR20100CT-G SR20150CT-G
Contextual Info: Comchip Schottky Barrier Rectifiers SMD Diode Specialist SR2030CT-G Thru. SR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

Contextual Info: Schottky Barrier Rectifiers SR2030CT-G Thru. SR20150CT-G Comchip SMD Diode Specialist Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

sr5 diode

Contextual Info: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.

Contextual Info: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR320-HF Thru. SR3200-HF Forward current: 3.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.

SR520-G

Abstract: SR540-G SR560-G SR5100-G SR5150-G SR5200-G diode SMD MARKING CODE r5
Contextual Info: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.

smd diode schottky code marking l2

Contextual Info: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.

Contextual Info: O O N M P T SR T ultRa low caPacitance SteeRing diode aRRay deScRiPtion T SR ESD E T Sot SR F T I IC POE IEC Package G M L P T L L U L C R HS C REACH C A SR T aPPlicationS C L C IEC IEC IEC L L P ESD A EFT A S A P VC USB I POE A V H L V L L D P E A FT Mechanical chaRacteRiSticS

diode receptor ir

Abstract: smd code qv TDSG5160 TLME3100 diode receptor receptor ir
Contextual Info: Vishay Semiconductors General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can

Contextual Info: COMCHIP Schottky Barrier Rectifier SMD Diodes Specialist SR502-G Thru. SR510-G Forward current: 5.0A Reverse voltage: 20 to 100V RoHS Device DO-27 Features -Fast switching. 0.052 1.30 -Low forward voltage, high current capability. 0.048(1.20) -Low power loss, high efficiency.

LTE-C9301

Abstract: LTE-C1901 LTR-S320C LTR-C9303B LTR-733DBM1 LTR-5986D LTR-C1903B c1906 LTE-C1506 LTE-5238A
Contextual Info: 168 P TIR Through Hole & SMD Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wire- less data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed, wide viewing angels, high signal noise ratio and UL safety approval. The product line includes GaAs

Telefunken diode color code

Abstract: smd code qv diode receptor ir QV smd
Contextual Info: Vishay Telefunken General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.

BL-LS3528A0S1IR

Contextual Info: SMD INFRARED EMITTING DIODES BL-LS3528A0S1IR        Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available