IS62C1024L-55TI
Abstract: IS62C1024L IS62C1024L-35Q IS62C1024L-35T IS62C1024L-35W IS62C1024L-45Q IS62C1024L-45T IS62C1024L-45W
Text: IS62C1024L IS62C1024L ISSI 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS62C1024L
IS62C1024L
072-word
SR81995C024L
IS62C1024L-55TI
IS62C1024L-35Q
IS62C1024L-35T
IS62C1024L-35W
IS62C1024L-45Q
IS62C1024L-45T
IS62C1024L-45W
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62C1024
Abstract: IS62C1024 IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45W
Text: ISSI ISSI IS62C1024 IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS62C1024
IS62C1024
072-word
IS62C1024-45WI
IS62C1024-45QI
IS62C1024-45TI
600-mil
525-mil
IS62C1024-55W
62C1024
IS62C1024-35Q
IS62C1024-35T
IS62C1024-35W
IS62C1024-45Q
IS62C1024-45W
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IS62C1024
Abstract: IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45T IS62C1024-45W 525mil
Text: IS62C1024 IS62C1024 ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS62C1024
IS62C1024
072-word
SR81995C024
IS62C1024-35Q
IS62C1024-35T
IS62C1024-35W
IS62C1024-45Q
IS62C1024-45T
IS62C1024-45W
525mil
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IS61C1024H-15J
Abstract: IS61C1024H-15K IS61C1024H-20J IS61C1024H-20K IS61C1024H-25J IS61C1024H-25K
Text: ISSI ISSI IS61C1024H IS61C1024H 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 15, 20, 25 ns • Low active power: 750 mW typical • Low standby power: 2 mW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
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IS61C1024H
IS61C1024H
072-word
SR81995C024
IS61C1024H-15J
IS61C1024H-15K
IS61C1024H-20J
IS61C1024H-20K
IS61C1024H-25J
IS61C1024H-25K
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IS61C1024
Abstract: IS61C1024-15M IS61C1024-20N IS61C1024-12JR IS61C1024-12KR IS61C1024-12MR IS61C1024-12NR IS61C1024-12TR IS61C1024L IS61C1024-15N
Text: IS61C1024 IS61C1024 IS61C1024L IS61C1024L ISSI ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS61C1024
IS61C1024L
IS61C1024
IS61C1024L
072-word
high-C1024L-25TI
300-mil
IS61C1024-15M
IS61C1024-20N
IS61C1024-12JR
IS61C1024-12KR
IS61C1024-12MR
IS61C1024-12NR
IS61C1024-12TR
IS61C1024-15N
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IS62C1024L-35T
Abstract: IS62C1024L-35W IS62C1024L-45Q IS62C1024L-45T IS62C1024L-45W IS62C1024L IS62C1024L-35Q
Text: IS62C1024L IS62C1024L ISSI 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS62C1024L
IS62C1024L
072-word
SR81995C024L
IS62C1024L-35T
IS62C1024L-35W
IS62C1024L-45Q
IS62C1024L-45T
IS62C1024L-45W
IS62C1024L-35Q
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0QQ011
Abstract: No abstract text available
Text: IS61C1024H ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly
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1024H
IS61C1024H
072-word
SR81995C
0QQ011
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IS61C1024
Abstract: No abstract text available
Text: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,
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IS61C1024
IS61C1024L
IS61C1024
IS61C1024L
072-word
300-mil
400-mil
IS61C1024L-20JI
IS61C1024L-20NI
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Untitled
Abstract: No abstract text available
Text: ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM J a n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly
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IS61C1024H
IS61C1024H
072-word
SR81995C024
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Untitled
Abstract: No abstract text available
Text: ISSI IS61C1024H 128K x 8 HIGH-SPEED CMOS STATIC RAM J a n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using/SS/'s high-performance CMOS technology. This highly
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IS61C1024H
IS61C1024H
072-word
32-pin
300-mil
400-mil
SR81995C024
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Untitled
Abstract: No abstract text available
Text: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process
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IS62C1024
JULY1996
IS62C1024
072-word
SR81995C024
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IS61C1024
Abstract: 102420M IS61C1024-15
Text: ISSI IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s tim e : 12, 15, 2 0 , 2 5 ns • L o w a c tiv e p o w e r: 6 0 0 m W ty p ic a l The I S S I IS61C 1024 and IS61C 1024L are very high-speed,
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IS61C1024
IS61C1024L
IS61C
1024L-12JR
1024L-12N
IS61C1024L-12KRI
1024L-12M
IS61C1024L-15JI
IS61C1024L-15NI
102420M
IS61C1024-15
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Untitled
Abstract: No abstract text available
Text: 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e ¡SSI IS 62C 1024L is a low p o w e r,131,0 7 2-w ord by 8-bit C M O S s ta tic R A M . It is fa b ric a te d u sin g ISSI's h ig h perform ance C M O S technology. T h is highly reliable process
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ISSIIS62C1024L
072-word
450-mil
R004404
00Q0400
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Untitled
Abstract: No abstract text available
Text: IS62C1024 m 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 FEATURES t DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 fiW (typical) CMOS standby • Output Enable (OE) and two Chip Enable
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IS62C1024
072-w
SR81995C024
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UEI 20 SP
Abstract: No abstract text available
Text: ISSI IS62C1024L 128K x 8 LOW POWER CMOS STATIC RAM july 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e I S S I IS 6 2 C 1 0 2 4 L is a lo w p o w e r,1 3 1 ,0 7 2 -w o rd b y 8 -b it • Low active power: 45 0 m W typical •
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IS62C1024L
525-mil
600-mil
SR81995C024L
UEI 20 SP
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