SRAM 5V 512K X 8 Search Results

68S16000

Abstract: AB-020
Contextual Info: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1

Contextual Info: LP614096-I Series 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Preliminary Document Title 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 7, 2009 Preliminary January, 2009, Version 0.0

GVT72512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

M68AF511A

Abstract: SO32 TSOP32
Contextual Info: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AF511AL

Abstract: SO32 TSOP32
Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

HMS51232M4G

Abstract: simm 72 pinout
Contextual Info: HANBit HMS51232M4G SRAM MODULE 2Mbyte 512K x 32-Bit , 72PIN SIMM, 5V Part No. HMS51232M4G GENERAL DESCRIPTION The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.

D0-D31

Contextual Info: MP512S32JC 512K x 32 Fast SRAM PLCC Issue 1.1 December 2007 General Description Features The MP512S32JC device is a 512K x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 15, 20 or 25 ns are available. The 5V device is

HMS51232M4L

Abstract: 72-pin simm
Contextual Info: HANBit HMS51232M4L HAN SRAM MODULE 2Mbyte 512K x 32-Bit , BIT SIMM 5V LOW POWER, 72-Pin Part No. HMS51232M4L GENERAL DESCRIPTION The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4printed circuit board.

Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,

as8sf384k32

Abstract: Mixed Module
Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

Contextual Info: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

DS3802

Abstract: DS3816C-512
Contextual Info: DS3816C-512 16Mb Advanced NV SRAM with Clock www.maxim-ic.com FEATURES § § § § § § § § § § § PACKAGE OUTLINE 5V operation ±10% Surface-mount NV RAM BGA module construction 512k x 32 NV SRAM memory space and separate 64 x 8 real-time clock memory

Contextual Info: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a

Contextual Info: SRAM & FLASH Mixed Module Austin Semiconductor, Inc. 128K x 16 SRAM & 512K x 16 FLASH AS8SF384K32 PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC FEATURES • Operation with single 5V supply

5962-94611

Contextual Info: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns

54321

Abstract: 5962-9461109HMX 5962-9461107HMX 702 smd AS8S512K32 AS8S512K32A 5962-9461110 5962-9461108HTA
Contextual Info: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns

Contextual Info: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns

Contextual Info: LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION „ Fast access time : 10/12/15ns „ Low power consumption: Operating current: 200/180/150mA TYP. Standby current: 1mA (TYP.) „ Single 5V power supply „ All inputs and outputs TTL compatible

Contextual Info: ADVANCE M I I C R O N MT5LC512K8D4 R E V O L U T IO N A R Y PINOUT 512K x 8 SRAM SRAM 512Kx 8 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • H igh speed: 1 2 ,1 5 , 20, 25 an d 35ns

Contextual Info: n r¿ } l AUSTIN SEMICONDUCTOR, INC. AS88512K32 512K X 32 SRAM SRAM MODULE AVAILABLE AS MILITARY SPECIFICATIONS • • SMD 5962-94611 MIL-STD-883 PIN ASSIGNMENT Top View 68 Lead CQFP FEATURES Operation with single 5V supply High speed: 20, 25 and 35ns Built in decoupling caps for low noise

Contextual Info: ADVANCE M IC R O N 1 M T5C512K8B2 512K X 8 SRAM SRAM 512Kx 8 SRAM FEATURES • High speed: 1 2,15, 20, 25 and 35ns • High-perform ance, low -pow er, CM OS double-m etal process • M ultiple center power and ground pins for improved noise imm unity • Single +5V ±10% pow er supply

CE5 marking

Abstract: HMS1M32M8LA 72PIN-SIMM
Contextual Info: HANBit HMS1M32M8LA SRAM MODULE 4Mbyte 1Mx32Bit ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8LA GENERAL DESCRIPTION The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.

HMN5128D

Abstract: 32PIN-DIP
Contextual Info: HANBit HMN5128D Non-Volatile SRAM MODULE 4Mbit 512K x 8-Bit ,32Pin-DIP, 5V Part No. HMN5128D GENERAL DESCRIPTION The HMN5128D Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write