SS16 DIODE SCHOTTKY Search Results

SS16 DIODE

Abstract: 403D SS16
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

"Power Diode"

Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

403D

Abstract: SS16 SS16T3
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16 DIODE schottky

Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

diode MARKING CODE SS16

Abstract: 403D SS16 Diode SS16T3
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16 Diode

Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS14 DIODE

Abstract: SS14
Contextual Info: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

SS14

Contextual Info: SS12-M3, SS13-M3, SS14-M3, SS15-M3, SS16-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

SS14 DIODE schottky G

Abstract: DIODE marking code SS14 SS16 DIODE schottky diode marking ss14 diode ss15 SS14 DIODE SS14 DIODE schottky SS13 SS14 SS15
Contextual Info: CYStech Electronics Corp. Spec. No. : C338AS Issued Date : 2004.03.10 Revised Date : Page No. : 1/1 1.0Amp. Surface Mount Schottky Barrier Diodes CSMASS1XAS Series Features • Low forward voltage drop • High current capability • High reliability • High surge current capability

ss12

Contextual Info: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak

SS16T3G

Abstract: SBRA8160
Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip       Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application

lm358 li ion charger circuit

Abstract: RMS TO DC converter using LM358 lm358 sum Lithium Ion Cells 12V DC DC 3A charger 1N5819 MIC4574 MIC4575 MIC4576 UPL1V470MEH ME 9435 motorola
Contextual Info: Application Note 15 Micrel Application Note 15 Practical Switching Regulator Circuits by Brian Huffman Overview A golden power supply that will satisfy every design requirement does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.

diode marking ss14

Abstract: SS14 DIODE FM1100-S FM120-S SS13 SS14 SS15 SS16 SS16 DIODE schottky
Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Features SMA-S Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)

SS14 DIODE

Abstract: FM1100-L FM120-L SS13 SS14 SS15 SS16
Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120-L THRU FM1100-L Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)

FM120 marking

Abstract: SS14 DIODE schottky FM1100 FM120 SS13 SS14 SS15 SS16 ss14 diode f.m 120 01
Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.177(4.4) 0.012(0.3) Typ.

SS14 DIODE schottky

Abstract: MBRA1100T3 S110 SS14 DIODE MBRA120T3 SS13 SS14 SS15 SS16 diode marking ss14
Contextual Info: Formosa MS MBRA120T3 thru MBRA1100T3 Chip Schottky Barrier Diodes Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)

SS12-S110

Abstract: SS14 DIODE SS13 SS14 SS15 SS16 SS18
Contextual Info: SS12-S110 Chip Schottky Barrier Diodes Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8)

FM150L

Abstract: FM160L SS15 SS16 DIODE marking code SS15
Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.

LL5817

Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time