SS1X Search Results

150v 1A schottky diode

Abstract: SS19 diode SS12 sma diode rectifier DO-214AC SS115 SS13 SS15 diode ss13
Contextual Info: SS1x Series Features: • • • • • • • • • For surface mounted application. Easy pick and place. Metal to silicon rectifier, majority carrier conduction. Low power loss, high efficiency. High current capability, low VF. High surge current capability.

SS14 DIODE schottky

Abstract: diode marking ss14 SS14 DIODE DC SS14 diode SS14 application notes DIODE ss14 SMA CASE 403D-02 footprint DIODE marking code SS14 diode SS12 sma Theta-JC, 403D-02
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: INTERCONNECT STRIPS M ates w ith : SS, SD, HSS, SL, SDL, ESS, ESD LBS SPECIFICATIONS B 1 LBS SERIES LEAD STYLE NO. PINS PER ROW For complete specifications see www.samtec.com?LBS Insulator Material: Black High Temperature Thermoplastic Flammability Rating:

FZH 191

Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Contextual Info: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7

ACE-Q101

Abstract: SS15-SS16 SS115
Contextual Info: SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction

Contextual Info: PWM +85°C DOUBLE METALLIZED AXIAL LEAD POLYPROPYLENE FILM CAPACITORS • For Pulse/Snubber Applications FEATURES • • • • • • Extremely Long 30,000 Hours Operating Life dV/dt Range Up to 750 VIp. Sec. Self Healing High Voltage LowESR High Current Carrying Capabilities (to 6 Amps. rms)

Contextual Info: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

SS16MHRSG

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

SS14 DIODE schottky

Abstract: DIODE ss14 SS14 DC DC SS14 diode 403D SS12T3 SS12T3G SS14 SS14T3 SS14T3G
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: rv, Lfv Mates w ith: TS, TD. HTS, BBS, BBD, BBL, BDL, BHS, §L TYPE STRIP NO. PINS PER ROW In PLATING OPTION W LEAD ^ STYLE W OPTION H W OTHER OPTION Specifications: SS’ SD s w Insulator Material: Black Glass Filled Polyester G 30LL" 0,76pm Gold contact

Contextual Info: F-205 SUPPLEMENT INTERCONNECT STRIPS Mates with: SS, SD, HSS, SL, SDL, ESS, ESD 1 | NO. PINS 1 | PER ROW LBS LBS SERIES LEAD STYLE SP E C IF IC A T IO N S For complete specifications see www.samtec.com?LBS Insulator Material: Black High Temperature Thermoplastic

Contextual Info: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip       Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application

SL-1XX-X-12

Abstract: sdl series SL- SERIES
Contextual Info: FACTSHEET F-200 SUPPLEMENT LBS–106–B–G–S INTERCONNECT STRIPS LBS SERIES Mates with: SS, SD, HSS, SL, SDL, ESS, ESD LBS 1 NO. PINS PER ROW PLATING OPTION LEAD STYLE Specifications: LBS –G _ =10µ" 0,25µm Gold on Tails Insulator Material: Black High Temperature

1-800-SAMTEC-9

Abstract: ht-10-sc ncl 052
Contextual Info: Mates w ith: TS, TD. HTS, BBS, BBD, BBL, BDL, BHS, TYPE STRIP PLATING OPTION NO. PINS PER ROW LEAD STYLE OPTION f f M OTHER OPTION C l Specifications: -N S S ’ SD s w In su lator M aterial: = Non Flush 30LL" 0,76pm G Black Glass Filled P olyester O p erating Te m p Range:

ss12

Contextual Info: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak

Contextual Info: SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency

Contextual Info: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020

Contextual Info: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020

Contextual Info: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020