SS39 Search Results

Contextual Info: SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SS393 TOSHIBA TOSHIBA DIODE 1 SS393 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 M A X IM U M RATINGS (Ta = 25°C)

1SS395

Contextual Info: TOSHIBA SS395 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - -EB 2 M A X IM U M RATINGS (Ta = 25°C)

SS391

Contextual Info: T O SH IB A SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: SS3957 PACKAGE STYLE:101 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 1000 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

Contextual Info: SS394 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS394 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2.5 - 0 . 3 • • h 0.25 1.5 -0 .1 5 Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5:mA - e - 2 M A X IM U M RATINGS (Ta = 25°C)

SS3613

Abstract: SS3612
Contextual Info: SS3611 SS3612 SS3613 SS3614 SS3957 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5093, REV. - HERMETIC AXIAL LEAD RECTIFIER DESCRIPTION: A 200/400/600/800/1000 VOLT, 1 AMP, 5000 NANOSECOND RECTIFIER. All ratings are at TA = 25oC unless otherwise specified.

ss39et

Abstract: ss49et
Contextual Info: DESCRIPTION The SS39ET/SS49E/SS59ET Series Low-cost Linear Halleffect sensors are small, versatile devices that are operated by the magnetic field from a permanent magnet or an electromagnet. The linear sourcing output voltage is set by the supply voltage

Contextual Info: SS394 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS394 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2.5 - 0 . 3 • • + 0.25 1 . 5 - 0 .1 5 Small Package Low Forward Voltage : Vjr 2 = 0.23V (Typ.) @Ijr = 5mA - e - 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA SS399 1 SS399 TO SHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr = 1.0V Typ. :V r = 400V (Min.)

Contextual Info: SS393 TOSHIBA TOSHIBA DIODE 1 SS393 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package Unit in mm VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 M A X IM U M RATINGS (Ta = 25°C)

236m

Contextual Info: SS392 TO SHIBA TOSHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9 + 0.25

1SS392

Contextual Info: TOSHIBA SS392 TOSHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5/¿A (MAX.) SC-5 9 M A X IM U M RATINGS (Ta = 25°C)

1SS391

Contextual Info: SS391 TOSHIBA TO SHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • Low Forward Voltage Small Package Ip = 5mA : VF 2) = 0.23V (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 4 FO-55112-C HONEYWELL PART NUMBER 3 2 1 REV DOCUMENT C 0088198 CHANGED BY RS 04APR12 CHECK CMH SS39ET NOTES 1 - SOLDERING INSTRUCTIONS: EXPOSURE TO HIGH TEMPERATURES SHOULD BE KEPT AT A MINIMUM HONEYWELL RECOMMENDS AN INFRARED REFLOW PROCESS WITH PEAK TEMPERATURES NOT EXCEEDING 245

Contextual Info: SS395 TO SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS39 5 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23 V (Typ.) @Ijn = 5mA 1.25 + 0.1 oo + ' 2 - -ES 2 od + i MAXIMUM RATINGS (Ta = 25°C)

1SS397

Contextual Info: SS397 TOSHIBA 1 SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vjr = 1.0V Typ. VR —400V (Min.)

1SS399

Contextual Info: TOSHIBA SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)

Contextual Info: SS392 TO SHIBA TO SHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING + 0.5 2 . 5 - 0 .3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9

Contextual Info: SS399 TO SHIBA 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr = 1.0V Typ. :V r = 400V (Min.)

SS39ET

Abstract: SS49E SS59ET Honeywell SS59ET ss49e hall effect SS59E
Contextual Info: DESCRIPTION The SS39ET/SS49E/SS59ET Series Low-cost Linear Halleffect sensors are small, versatile devices that are operated by the magnetic field from a permanent magnet or an electromagnet. The linear sourcing output voltage is set by the supply voltage

1SS395

Contextual Info: SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 = 0*23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - 2 -E ft oö M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SS396 TO SHIBA TOSHIBA DIODE 1 SS396 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package + 0.25 .1.5-0.15 VF 3 = 0.54V (Typ.) Ir = 5/*A (Max.)