SSD3 Search Results

SSD30N06-39D

Abstract: MosFET
Contextual Info: SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS ON 38 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density

BAV70

Abstract: BAV99 BAW56 BAV99 application
Contextual Info: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)

SSD30P06-45D

Contextual Info: SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS ON 49mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this

30A N-CH

Contextual Info: SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS ON 38 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density

Contextual Info: BAW56 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)

SSD30N10-50D

Abstract: MosFET
Contextual Info: SSD30N10-50D 20A, 100V, RDS ON 50mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

Contextual Info: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

222 diode

Abstract: smd DAL DAP202C DA112 DA116 DA113 smd diod DA121 DA114 DA115
Contextual Info: DOC. NO. 04CB-000325 DA112 DA113 DA114 DA115 DA116 DA118 DA119 DA12O DA121 DAN2O2C DAP2O2C DAN2O2K In these single packages, there are one or two diodes as shown in the circuit diagrams. Features available in the following 3-pin packages: SSD3 SST, US/European

dpack power mosfet

Contextual Info: SSD30N10-50D 26A, 100V, RDS ON 50mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

SSD30N10-70D

Abstract: MosFET
Contextual Info: SSD30N10-70D N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS ON 78 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) KEY FEATURES    Low RDS(on) trench technology Low thermal impedance

100C

Contextual Info: SSD3055 15A, 30V,RDS ON 26mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-252 Description The SSD3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

DAN217C

Abstract: da218S da204k DA216 AN217 DAN217C equivalent DA210S DAN217
Contextual Info: DA204K DA204U DA210S DA216 DA218S DAN217 DA221 DAN217C DA223 In these single packages, there are two diodes connected in series for 2VF ratings as shown in the circuit diagrams. Features • available in the following packages: — SSD3 (SST, US/European

BAV99 DIODES

Contextual Info: BAV70 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)

Contextual Info: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)

diode ja

Contextual Info: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.

SSD30N15-60D

Abstract: MosFET
Contextual Info: SSD30N15-60D 22A , 150V , RDS ON 69mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

Contextual Info: 0,178 ' h íi 1 £ 0,125 c 0, 1 0,65mm 0,45 n n í i n n n n n n n n n n n ,018' DIA, PN L xx 0,45 0,75 0,85 0,95 1,05 1,25 1,45 PA-SSD3SM18-08 PA-SSD3SM18-14 PA-SSD3SM18-16 PA-SSD3SM18-18 PA-SSD3SM18-20 PA-SSD3SM18-24 PA-SSD3SM18-28 NOTES! 1 Plug pins a r e

baw56

Abstract: BAV99 application circuit bav99 BAV70 Diode bav99 Diode bav99 8 BAV99 application bav99 marking
Contextual Info: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication Ultra high speed switching 2.9±0.2 2.4±0.2 1.3+0.2 −0.1 ROHM : SSD3 EIAJ : − JEDEC : SOT-23

PA-SSD3SM18-16

Abstract: PA-SSD3SM18-08 PA-SSD3SM18-14 PA-SSD3SM18-18 PA-SSD3SM18-20 PA-SSD3SM18-24 PA-SSD3SM18-28
Contextual Info: 0,178 'h íi 1 £ 0,125 0,1 0,65mm 0,45 nníiíiíiíiíiíiíiíiíiíi ,018' DIA PN xx L PA-SSD3SM18-08 PA-SSD3SM18-14 PA-SSD3SM18-16 PA-SSD3SM18-18 PA-SSD3SM18-20 PA-SSD3SM18-24 PA-SSD3SM18-28 0,45 0,75 0,85 0,95 1,05 1,25 1,45 NDTESi 1 Plug pins a r e

SSD30N10-78D

Abstract: MosFET
Contextual Info: SSD30N10-78D 21A, 100V, RDS ON 78mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

Contextual Info: SSD3310 -10A, -20V,RDS ON 150mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD3310 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance

Contextual Info: SSD3403 -10A, -30V,RDS ON 200mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

SSD3055S

Abstract: 100C
Contextual Info: SSD3055S 18A, 20V,RDS ON 25mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-252 Description The SSD3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Contextual Info: BAV99 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)