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    SSF1020 Search Results

    SSF1020 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSF-102-02-S-D
    		Samtec Connector: Wire to Board Connector: 4: 2.54: SCR: SMD Original PDF 99.93KB 1
    SSF-102-02-S-D-LC
    		Samtec Connector: Wire to Board Connector: 4: 2.54: SCR: SMD Original PDF 99.93KB 1
    SF Impression Pixel

    SSF1020 Price and Stock

    Samtec Inc

    Samtec Inc SSF-102-02-S-D-LC

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    Avnet Americas SSF-102-02-S-D-LC Bulk 6 Weeks 500
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    Samtec Inc SSF-102-02-S-D

    - Bulk (Alt: SSF-102-02-S-D)
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    Avnet Americas SSF-102-02-S-D Bulk 10 Weeks 500
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    Samtec Inc SSF-102-01-S-D

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    Avnet Americas SSF-102-01-S-D Bulk 111 Weeks 500
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    SSF1020 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dpak mosfet

    Abstract: 100V 60A Mosfet SSF1020D mosfet 30A p channel mosfet 100v 30V 60A power p MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 100V 60A Diode
    Contextual Info: SSF1020D Feathers: ID =60A „ Advanced trench process technology BV=100V „ Ultra low Rdson, typical 16mohm Rdson=20mΩ（max.） „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF1020D is a new generation of middle voltage and


    Original     		SSF1020D 16mohm 20mmax. SSF1020D dpak mosfet 100V 60A Mosfet mosfet 30A p channel mosfet 100v 30V 60A power p MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 100V 60A Diode PDF

    Mosfet

    Abstract: SSF1020
    Contextual Info: SSF1020 100V N-Channel MOSFET FEATURES ID =60A  Advanced trench process technology  Ultra low Rdson, typical 16mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product BV=100V RDS ON =16mΩ（Typ.）


    Original     		SSF1020 16mohm SSF1020 O-220) Mosfet PDF

    avalanche diode 30A

    Abstract: p channel mosfet 100v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 50V 60A MOSFET
    Contextual Info: SSF1020A ID =60A Feathers: „ Advanced trench process technology BV=100V „ Ultra low Rdson, typical 16mohm Rdson=20mΩ（max.） „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF1020A is a new generation of middle voltage and


    Original     		SSF1020A 16mohm 20mmax. SSF1020A avalanche diode 30A p channel mosfet 100v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 50V 60A MOSFET PDF

    Mosfet

    Abstract: SSF1020D
    Contextual Info: SSF1020D 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 16mΩ(typ.) ID 60A DPAK Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF1020D Mosfet SSF1020D PDF

    avalanche diode 30A

    Abstract: p channel mosfet 100v 100V 60A Mosfet
    Contextual Info: SSF1020 Feathers: ID =60A „ Advanced trench process technology BV=100V „ Ultra low Rdson, typical 16mohm Rdson=20mΩ（max.） „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF1020 is a new generation of middle voltage and high


    Original     		SSF1020 16mohm 20mmax. SSF1020 avalanche diode 30A p channel mosfet 100v 100V 60A Mosfet PDF

    hsm8100j

    Abstract: scf2025 SCF203 HSM890J
    Contextual Info: Schottky Rectifiers SCH MSP835 MS835 LSM840G LSM840J SK84 HSM840G HSM840J MS840 SD840 SD840 LSM845G LSM845J MSP845 HSM845G HSM845J MS845 SD845 SD850 SK85 SD860 SK86 SD880 HSM880G HSM880J MS880 SK88 HSM890G HSM890J MS890 SK89 SD8100 SK810 HSM8100G HSM8100J


    OCR Scan     		D0-201AD DO-215AB DO-214AB DO-201 DO-21 hsm8100j scf2025 SCF203 HSM890J PDF