SSM6J505NU Search Results
SSM6J505NU Price and Stock
Toshiba America Electronic Components SSM6J505NU,LFMOSFET P-CH 12V 12A 6UDFNB |
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SSM6J505NU,LF | Cut Tape | 10,631 | 1 |
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SSM6J505NU,LF | Reel | 16 Weeks | 3,000 |
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SSM6J505NU,LF | 5,969 |
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SSM6J505NU,LF | Reel | 3,000 |
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Toshiba America Electronic Components SSM6J505NU,LF(TTrans MOSFET P-CH Si 12V 12A 6-Pin UDFN EP T/R |
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SSM6J505NU,LF(T | 2,581 | 129 |
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SSM6J505NU,LF(T | Cut Tape | 3,000 | 1 |
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SSM6J505NU,LF(T | Cut Tape | 2,581 | 0 Weeks, 1 Days | 5 |
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SSM6J505NU,LF(T | 15 Weeks | 3,000 |
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Toshiba America Electronic Components SSM6J505NULFTMOSFET SILICON P-CHANNEL MOS (U-MOSVI) Power Field-Effect Transistor, 12A I(D), 12V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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SSM6J505NULFT | 2,700 |
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Toshiba America Electronic Components SSM6J505NULF(TTrans MOSFET P-CH 12V 12A 6-Pin UDFN Embossed T/R (Alt: SSM6J505NU,LF(T) |
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SSM6J505NULF(T | 24 Weeks | 3,000 |
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SSM6J505NU Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SSM6J505NU |
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SSM6J505 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | |||
SSM6J505NU,LF |
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FETs - Single, Discrete Semiconductor Products, MOSFET P CH 12V 12A UDFN6B | Original |
SSM6J505NU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) |
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SSM6J505NU | |
Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) |
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SSM6J505NU | |
Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) |
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SSM6J505NU | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 | |
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
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