SSM9926 Search Results

SSM9926GM

Abstract: 9926gm marking codes transistors SSs
Contextual Info: SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS 20V R DS ON 30mΩ ID 6A DESCRIPTION The SSM9926GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

Contextual Info: SSM9926TGO N-CHANNEL ENHANCEMENT MODE 8 POWER MOSFET A t PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching,

SSM9926M

Contextual Info: SSM9926M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive D2 D2 D1 D1 Low drive current SO-8 20V RDS ON 30mΩ 6A ID G2 S2 Surface-mount package BV DSS G1 S1 Description Power MOSFETs from Silicon Standard provide the

Contextual Info: SSM9926EO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance G2 S2 D2 Capable of 2.5V gate drive Low drive current S2 TSSOP-8 S1 G1 S1 D1 BV DSS 20V R DS ON 28mΩ ID 4.6A Surface-mount package Description Power MOSFETs from Silicon Standard provide the

Contextual Info: SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance G2 S2 D2 Capable of 2.5V gate drive Low drive current S2 TSSOP-8 S1 G1 S1 D1 BV DSS 20V R DS ON 28mΩ ID 4.6A Surface-mount package Description Power MOSFETs from Silicon Standard provide the

Contextual Info: SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary SO-8 8 VDS V 7 RDS(ON) (mΩ) Max ID (A) 6 5 30 @VGS = 4.0V 6A 20V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.

Contextual Info: SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET A PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V The Advanced Power MOSFETs from Silicon Standard Corp. RDS ON 28mΩ

SSM9926EM

Contextual Info: SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive D2 D2 D1 D1 Low drive current SO-8 20V RDS ON 30mΩ 6A ID G2 S2 Surface-mount package BV DSS G1 S1 Description Power MOSFETs from Silicon Standard provide the

SSM9926A

Abstract: diode ja
Contextual Info: SSM9926A Comman Drain Dual N-Channel Enhancement Mode MOSFET Product Summary SOP-8 8 VDS V ID (A) 20V 6A 7 RDS(ON) (mΩ) Max 6 5 30 @VGS = 4.0V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

Contextual Info: SS6821 Single-Cell Lithium-Ion Battery Protection IC n n FEATURES l Reduction in board size with miniature SOT-23-5 package and fewer external components. l Ultra-low quiescent current at 7µA VCC=3.5V . l Ultra-low power-down current at 0.6 µ A (V CC=2.2V).

Contextual Info: SS6802 Two-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-low quiescent current at 10µA V CC=7V, VC=3.5V . Ultra-low power-down current at 0.2 µ A (V CC =3.8V, VC=1.9V). Wide supply range: 2V to 18V. Precision over-charge protection voltage

Lithium-Ion Battery Charger sot 23-5

Abstract: 12v battery overcharge protection circuit diagram overcharge protection circuit diagram SS6821 SS6821A SS6821ACV SS6821B SS6821C SS6821D 12v battery overcharge protection circuit
Contextual Info: SS6821 Single-Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION The SS6821 battery protection IC is designed to protect a lithium-ion battery from damage or reduced lifetime due to over-charge, over-discharge, and/or over-current in single-cell lithium-ion battery powered systems, such as