SSP1N55 Search Results

SSP1N55 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SSP1N55		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF	101.14KB	1

SSP1N55 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	GG1247Ã SSP1N60/1N55 O-220 SSP1N60 SSP1N55	PDF
SSP1N60 Abstract: ssp1n55 Contextual Info: N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Improved high temperature reliability 1. Gate 2. Drain	OCR Scan	SSP1N60/1N55 O-220 SSP1N60 SSP1N55 SSP1N55 300us,	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance

OCR Scan

GG1247Ã SSP1N60/1N55 O-220 SSP1N60 SSP1N55

PDF

SSP1N60

Abstract: ssp1n55
Contextual Info: N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Improved high temperature reliability 1. Gate 2. Drain

OCR Scan

SSP1N60/1N55 O-220 SSP1N60 SSP1N55 SSP1N55 300us,

PDF