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    ST 120 TRANSISTOR Search Results

    ST 120 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ST 120 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1893

    Abstract: No abstract text available
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N1893 Features • • • • 120 Volts 0.5 Amps Meets MIL-S-19500/182 Collector-Base Voltage 120 Collector Current: 0.5 mA Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings


    Original     		PDF 2N1893 MIL-S-19500/182 MSC0271A 20Vdc, 500mAdc) 2N1893

    2SD882U-P

    Abstract: No abstract text available
    Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120


    Original     		PDF 2SD882U-P O-126 2SD882U-P

    2SD882U-P

    Abstract: No abstract text available
    Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V


    Original     		PDF 2SD882U-P O-126 t10ms) 200mA 500mA, 250mA, 2SD882U-P

    2SD882U-P

    Abstract: No abstract text available
    Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V


    Original     		PDF 2SD882U-P O-126 t10ms) 200mA 500mA, 250mA, 2SD882U-P

    2SD882U-P

    Abstract: No abstract text available
    Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V


    Original     		PDF 2SD882U-P O-126 t10ms) 200mA 500mA, 250mA, 2SD882U-P

    ic 4000

    Abstract: 2SD882U-P 2SD882U
    Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V


    Original     		PDF 2SD882U-P O-126 t10ms) 200mA 500mA, 250mA, ic 4000 2SD882U-P 2SD882U

    2SD797Y

    Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)


    Original     		PDF 108T2 BLX55 SDT8302 SDT8304 SML44302 SML44307 2SD797Y 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802

    2u 62 diode

    Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20


    Original     		PDF SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808

    Untitled

    Abstract: No abstract text available
    Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO =-120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC 3 2 Applications ■


    Original     		PDF 2STA1694 2STC4467 20MHz 2STA1694

    ST16N10

    Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
    Text: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF ST16N10 ST16N10 O-252 O-251 O-252 O-251 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package

    2STA1694

    Abstract: 2STC4467
    Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier


    Original     		PDF 2STA1694 2STC4467 2STA1694 2STC4467

    2STA1694

    Abstract: 2STC4467 JESD97
    Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier


    Original     		PDF 2STA1694 2STC4467 2STA1694 2STC4467 JESD97

    2STA1694

    Abstract: 2STC4467
    Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier


    Original     		PDF 2STC4467 2STA1694 2STA1694 2STC4467

    2STA1694

    Abstract: 2STC4467 JESD97
    Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier


    Original     		PDF 2STC4467 2STA1694 2STA1694 2STC4467 JESD97

    ESM2040DV

    Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50


    Original     		PDF D66ES7 2SC3054 D64DS7 D64DS7T D64ES7T GE10009 ETG36-040C ETG36-040D PTC6072 PTC6063 ESM2040DV ESM2 ESM2040D ke92 KE924503 m*11014 2SD644 SD6062 esm749a

    Untitled

    Abstract: No abstract text available
    Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■


    Original     		PDF 2STC4467 2STA1694 2STC446and

    Untitled

    Abstract: No abstract text available
    Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■


    Original     		PDF 2STA1694 2STC4467 2STA16and

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6

    JESD97

    Abstract: M252 SD56120M
    Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■


    Original     		PDF SD56120M 860MHz SD56120M JESD97 M252

    Untitled

    Abstract: No abstract text available
    Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■


    Original     		PDF SD56120M 860MHz SD56120M

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 5006 | Thick Film Hybrid 1C STK390-120 1-Channel + Supply Switching Convergence Correction Circuit lc max = 4A Overview Package Dimensions The ST K 390-120 is a high-accuracy convergence correction circuit hybrid IC designed to complement the


    OCR Scan     		PDF STK390-120 A03345 2200pF 120pF) A03346

    BFQ28

    Abstract: Q62702-F527 CJCO D 843 Transistor
    Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		PDF fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR -COPTO} bâ 8961726 TEXAS IN ST R DE | f l T b l ? a b 0037Dbl 62C 3 7 0 6 1 OPTO 4 D TIPL762, TIPL762A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 7"-33 - / 3 120 W at 25°C Free-Air Temperature 6 A Continuous Collector Current


    OCR Scan     		PDF 0037Dbl TIPL762, TIPL762A TIPL762 TIPL762A CI0370t

    2SD1763

    Abstract: 2Sb1186 2SD1763 transistor
    Text: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I


    OCR Scan     		PDF 2SD1763 2SB1186 O-220FP SC-67 Para60 2SD1763 2SD1763 transistor