1702 NPN transistor
Abstract: St 1702 TRANSISTOR 1702 ST 1702
Text: ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, K, L, M, N and H, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
PDF
|
100mA
500mA,
1702 NPN transistor
St 1702 TRANSISTOR
1702
ST 1702
|
1702 NPN transistor
Abstract: St 1702 TRANSISTOR st1702 ST 1702 1702 S 170 TRANSISTOR
Text: ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, K, L, M, N and H, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
PDF
|
100mA
500mA,
1702 NPN transistor
St 1702 TRANSISTOR
st1702
ST 1702
1702
S 170 TRANSISTOR
|
1702 NPN transistor
Abstract: No abstract text available
Text: ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into five groups, L, M, N, O and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
PDF
|
|
1702 NPN transistor
Abstract: St 1702 TRANSISTOR st 1702 1702 st1702
Text: ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, K, L, M, N and H, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
PDF
|
100mA
500mA,
1702 NPN transistor
St 1702 TRANSISTOR
st 1702
1702
st1702
|
1702 NPN transistor
Abstract: No abstract text available
Text: ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into five groups, L, M, N, O and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
PDF
|
|
alpine 3555
Abstract: Newport Components 1013 clare 852 unitronics JI 3009-2 1131L gentech A320 54711 74146
Text: You are in the Sales Info File • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators Switch-Mode Voltage Regulators Voltage References Switched-Capacitor Voltage Converters
|
Original
|
PDF
|
|
FX3G-24M
Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
Text: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M FX3G-24M I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function
|
Original
|
PDF
|
196-EN
FX3G-14M
FX3G-24M
IL-49001
IL-42160
ZA-1600
D-40880
24743-A
FX3G-24M
FX3G-14M
mitsubishi plc FX3g 40m communication
FX3G24M
FX3G-40M
mitsubishi MODBUS RTU
mitsubishi plc FX3g 60m communication
mitsubishi plc FX3g
FX3G24M CAD
FX3G-60M
|
FR-D720S
Abstract: FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC
Text: Specifications /// Product Information EBG 184-EN MITSUBISHI ELECTRIC FACTORY AUTOMATION Type FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D740-050-EC FR-D740-080-EC
|
Original
|
PDF
|
184-EN
FR-D720S-008-EC
FR-D720S-014-EC
FR-D720S-025-EC
FR-D720S-042-EC
FR-D720S-070-EC
FR-D720S-0100-EC
FR-D740-012-EC
FR-D740-022-EC
FR-D740-036-EC
FR-D720S
FR-D700
FR-D740-022-EC
FR-D740-036-EC
FR-D720S-042-EC
FR-D740
FR-D740-120-EC
FR-D740-080-EC
FR-D740-050-EC
FR-D740-160-EC
|
Untitled
Abstract: No abstract text available
Text: 19-1068; Rev 0; 6/96 Dua l-Supply, Low -On-Re sist a nc e , SPST, CM OS Ana log Sw it c he s _Fe a t ure s ♦ Guaranteed Low Off-Leakage Currents: 1nA at +25°C 20nA at +85°C _Applic a t ions ♦ Fast Switching Speed: tON = 100ns, tOFF = 75ns
|
Original
|
PDF
|
100ns,
OT23-5
95ref
90ref
21-0057B
OT23-5
|
4606 MOSFET INVERTER
Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
Text: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Datasheet 4-wire Resistive Touch Screen Controller BU21029MUV ●General Description Unlike most resistive touch screen controllers, the BU21029MUV 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single
|
Original
|
PDF
|
BU21029MUV
BU21029MUV
12-bit
|
Untitled
Abstract: No abstract text available
Text: Datasheet 4-wire Resistive Touch Screen Controller BU21029GUL ●General Description Unlike most resistive touch screen controllers, the BU21029GUL 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single
|
Original
|
PDF
|
BU21029GUL
BU21029GUL
12-bit
|
Untitled
Abstract: No abstract text available
Text: Datasheet 4-wire Resistive Touch Screen Controller BU21029GUL ●General Description Unlike most resistive touch screen controllers, the BU21029GUL 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single
|
Original
|
PDF
|
BU21029GUL
BU21029GUL
12-bit
|
Micro Processor Intel 8008
Abstract: intel 1101 intel 8008 intel 2102 Static RAM 9012 TRANSISTOR REPLACEMENT C8008-1 8008 CPU intel 8008 cpu 8008 Intel MCB8-10
Text: inUL_ IN T E L C O RP. 3065 Bowers Avenue, Santa Clara, California 95051 * 408 246-7501 8008 8-BIT PARALLEL CENTRAL PROCESSOR UNIT mesa MICRO COMPUTER SET USERS MANUAL NOV. 1972 £ Intel Corporation 1972 REV. 2 A A W /$'& & / '4? S ’? ? / f/ INTEL MAKES IT EASY
|
OCR Scan
|
PDF
|
SIM8-01.
MP7-03.
00-overflow
01-result
Micro Processor Intel 8008
intel 1101
intel 8008
intel 2102 Static RAM
9012 TRANSISTOR REPLACEMENT
C8008-1
8008 CPU
intel 8008 cpu
8008 Intel
MCB8-10
|
|
|
IC SEM 2105
Abstract: RF POWER TRANSISTOR NPN, motorola transistor 0132 2N
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6082 The RF Line 2 5 W - 175 M H z RF POWER TRANSISTOR NPN SILIC O N NPN S IL IC O N R F POW ER T R A N S IS T O R S . . . designed fo r 12.5 V o lt V H F large-signal a m plifier applications required in commercial and industrial equipm ent operating to
|
OCR Scan
|
PDF
|
2N6082
IC SEM 2105
RF POWER TRANSISTOR NPN, motorola
transistor 0132 2N
|
Motorola 2N6083
Abstract: sem 2106 2N6083
Text: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications
|
OCR Scan
|
PDF
|
2N6083
Motorola 2N6083
sem 2106
2N6083
|
CI008
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power
|
OCR Scan
|
PDF
|
UPA1702
CI008
|
transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: I . .• I Preliminary Data Sheet No. P D - 9.1274C International n ,r IORKectitier R E PE T IT IV E A V A LA N C H E A N D IR H Y 7130C M irhy 8 1 3 ocm dv/dt R A T E D JA N SR 2N 7380 JA N SH 2N 7380 tREF: MILf ,R^ i 9A 5? ? ^ ] H EX FET T R A N S I S T O R
|
OCR Scan
|
PDF
|
1274C
7130C
10OVolt,
S5452
|
SQ-10a
Abstract: Teledyne Philbrick 1701 TELEDYNE PHILBRICK 4131-30 TELEDYNE PHILBRICK V to F 4701 Philbrick P85AU TELEDYNE PHILBRICK 1702 TELEDYNE PHILBRICK 2203 TELEDYNE PHILBRICK 1009 teledyne TP 1322 teledyne 4452
Text: TELEDYNE PHILBRICK M 1 C R C I R C U 1 T S UNITED STATES SOUTHEAST HEADQUARTERS 1640 Huron Trail WEST Allied Drive at Rte. 128 Dedham. MA 02026 Maitland. FL 82751 30423 Canwood Street Suite 212 Agoura Hills. CA 91301 Tel: 8188893827 Twx: 910.494 1949 Tel:
|
OCR Scan
|
PDF
|
SQ-10A
SQ-210
SQ-517
U5801
Teledyne Philbrick 1701
TELEDYNE PHILBRICK 4131-30
TELEDYNE PHILBRICK V to F 4701
Philbrick P85AU
TELEDYNE PHILBRICK 1702
TELEDYNE PHILBRICK 2203
TELEDYNE PHILBRICK 1009
teledyne TP 1322
teledyne 4452
|
mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
|
OCR Scan
|
PDF
|
|
Intel 1702 eprom
Abstract: intel 2708 eprom 2732 eprom 2716 2k eprom 24 pin 8080 processor intel 2758 eprom intel application note memory EPROM 2708 intel 2732 eprom intel 1702a eprom
Text: intel APPLICATION NOTE A P -72 INTRODUCTION This A pplication N ote discusses how the Intel fam ily o f 5 volt EPROIV s can be used w ith m icroprocessor systems. T he pinout evolution and philosophy are explored in detail, which leads directly to system architecture. P a r
|
OCR Scan
|
PDF
|
|
2sb370
Abstract: GET102 2sa90 2N2225 2SB450 2SB450A ASY82 SFT121 SFT142 usaf521es071
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
2sb370
GET102
2sa90
2N2225
2SB450
2SB450A
ASY82
SFT121
SFT142
usaf521es071
|
27b4
Abstract: No abstract text available
Text: intéT ARTICLE REPRINT AR-260 March 1983 f l f S> Jir »<• * <Vi <y * a ' ¿X T * < * < ° %• M A R C H 1963 IN T E L C ORPO RATIO N , 1983. OftOCft NUM BER: 210968-001 4-6 Technical articles_ E-PROMs graduate to 256-K density with scaled n-channel process
|
OCR Scan
|
PDF
|
AR-260
256-K
2725t>
27b4
|
