ST 9519 Search Results

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

USER MANUAL ESH2-Z5

Abstract: MANUAL ESH2-Z5 ESH2-Z5 IFAXDM1414 RS ESH2-Z5 Kyoritsu KNW-242 ps2 controller adaptor to usb MS-6728 E5XKB5121WTH0110 KNW-242
Contextual Info: PEP Testing Laboratory 12-3Fl, No. 27-1, Lane 169, Kang-Ning St., Hsi-Chih, Taipei Hsien, Taiwan, R. O. C. TEL: 886-2-26922097 FAX: 886-2-26956236 NVLAP LAB CODE: 200097-0- REPORT NO. :E940698 FCC DoC TEST REPORT According to FCC Part 15 Test Κ Κ Κ Item

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

7105

Abstract: 035H IRFPE30
Contextual Info: PD - 95198 IRFP440PbF • Lead-Free www.irf.com 1 4/27/04 IRFP440PbF 2 www.irf.com IRFP440PbF www.irf.com 3 IRFP440PbF 4 www.irf.com IRFP440PbF www.irf.com 5 IRFP440PbF 6 www.irf.com IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

Contextual Info: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228

91228

Abstract: 035H IRFPE30
Contextual Info: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228

Transistor Mosfet N-CH 400V 40A

Abstract: AN-994 IRFR120 R120 Transistor Mosfet N-CH 200V 40A IRF 548
Contextual Info: PD - 95192 IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

ge-20 transistor

Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95196A IRF7328PbF HEXFET Power MOSFET lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿ Available in Tape & Reel lÿ Lead-Free VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

F7101

Abstract: IRF7101 IRF7328PBF 2675 so8
Contextual Info: PD - 95196A IRF7328PbF HEXFET Power MOSFET lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿ Available in Tape & Reel lÿ Lead-Free VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

Equivalent IRF 740

Abstract: IRF7341PbF HEXFET Power MOSFET HEXFET SO-8 IRF Power MOSFET code marking EIA-541 IRF7101
Contextual Info: PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2

IRF7101

Abstract: z 409
Contextual Info: PD - 95196 IRF7328PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free ● VDSS ● -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

jd 1803 b 107

Abstract: jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 119 Russell Street

CH-5430

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest Northeast 1 19 R ussell Street Littleton, M A 0 1 4 6 0 TE L: 5 0 8 4 8 6 -0 7 0 0 FA X : (5 0 8 ) 4 8 6 -8 2 0 9 3 0 0 Park Boulevard Suite 2 1 0 Itasca, IL 6 0 1 4 3 -2 6 3 6 TEL: (7 0 8 ) 7 7 5 -1 0 5 0

240-22

Abstract: 84107
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central

sung wei

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708)775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest

27408

Abstract: MSC 501 302 D3053 26138
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 119 Russell S treet Littleton, MA 01460 TEL: 508 486-0700 FAX: (508) 486-8209 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: (708) 775-1050 FAX: (708) 775-1058 3655 North First Street

Contextual Info: PD - 95192A IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

SAMSUNG 834

Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street

14624

Abstract: Intelatech 89324 SW 602 BP
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest

Deutsche Post

Abstract: sung wei 105th JTA Research
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 tasca, IL 60143-2636 TEL: (708 775-1050 FAX: (708)775-1058 3655 North First Street San Josa, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central

ky 708

Abstract: D-71272 bay trail l BC 546 203B
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 south Central