Untitled
Abstract: No abstract text available
Text: Extract from the online catalog FKICS 2,5/ 3-ST-5,08 Order No.: 1981759 The figure shows a 10-position version of the product Plug component, Nominal current: 12 A, Rated voltage III/2 : 320 V,
|
Original
|
PDF
|
10-position
CC-2009)
|
EIA-541
Abstract: IRF7862PBF TT5 marking
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
|
Original
|
PDF
|
7275A
IRF7862PbF
EIA-541
IRF7862PBF
TT5 marking
|
IRF7862
Abstract: IRF7862PBF EIA-541
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
|
Original
|
PDF
|
7275A
IRF7862PbF
IRF7862
IRF7862PBF
EIA-541
|
IRF 810
Abstract: EIA-541
Text: PD - 97275 IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
|
Original
|
PDF
|
IRF7862PbF
EIA-481
EIA-541.
IRF 810
EIA-541
|
IRF 810
Abstract: IRF7862
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance
|
Original
|
PDF
|
97275B
IRF7862PbF
IRF 810
IRF7862
|
Untitled
Abstract: No abstract text available
Text: PD - 97275B IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS RDS on max 3.3m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 4.5V VGS
|
Original
|
PDF
|
97275B
IRF7862PbF
|
Untitled
Abstract: No abstract text available
Text: PD - 97273C IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
|
Original
|
PDF
|
97273C
IRF6712SPbF
IRF6712STRPbF
|
DirectFET
Abstract: IRF6716MPbF 12M10
Text: PD - 97274A IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.2mΩ@10V 2.0mΩ@ 4.5V l Dual Sided Cooling Compatible
|
Original
|
PDF
|
7274A
IRF6716MPbF
IRF6716MTRPbF
DirectFET
IRF6716MPbF
12M10
|
Untitled
Abstract: No abstract text available
Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible 25V max ±20V max l Ultra Low Package Inductance
|
Original
|
PDF
|
97274C
IRF6716MPbF
IRF6716MTRPbF
|
Untitled
Abstract: No abstract text available
Text: PD - 97273E IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
|
Original
|
PDF
|
97273E
IRF6712SPbF
IRF6712STRPbF
|
Untitled
Abstract: No abstract text available
Text: PD - 97274 IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.2mΩ@10V 2.0mΩ@ 4.5V
|
Original
|
PDF
|
IRF6716MPbF
IRF6716MTRPbF
|
Untitled
Abstract: No abstract text available
Text: PD - 97273F IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHS Compliant and Halogen Free VDSS l Low Profile (<0.7 mm) VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 25V max ±20V max 3.8mΩ@ 10V 6.7mΩ@ 4.5V
|
Original
|
PDF
|
97273F
IRF6712SPbF
IRF6712STRPbF
|
IRF p 536 MOSFET
Abstract: IRF6716MPBF irf 536 IRF6716 mosfet 4800
Text: PD - 97274B IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.2mΩ@10V 2.0mΩ@ 4.5V l Dual Sided Cooling Compatible
|
Original
|
PDF
|
97274B
IRF6716MPbF
IRF6716MTRPbF
IRF p 536 MOSFET
IRF6716MPBF
irf 536
IRF6716
mosfet 4800
|
Untitled
Abstract: No abstract text available
Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible 25V max ±20V max l Ultra Low Package Inductance
|
Original
|
PDF
|
97274C
IRF6716MPbF
IRF6716MTRPbF
|
|
Untitled
Abstract: No abstract text available
Text: PD - 97273B IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
|
Original
|
PDF
|
97273B
IRF6712SPbF
IRF6712STRPbF
|
current rating for MQ 6
Abstract: No abstract text available
Text: PD - 97273 IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Bromide l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters
|
Original
|
PDF
|
IRF6712SPbF
IRF6712STRPbF
current rating for MQ 6
|
Untitled
Abstract: No abstract text available
Text: PD - 97273B IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
|
Original
|
PDF
|
97273B
IRF6712SPbF
IRF6712STRPbF
|
EIA-541
Abstract: No abstract text available
Text: PD - 97275A IRF7862PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
|
Original
|
PDF
|
7275A
IRF7862PbF
EIA-481
EIA-541.
EIA-541
|
NE 7555
Abstract: s 170 ph ba 3906 electronic component datasheet Bc 648 c 10 ph diode 61727 PH 336 PH 36 CH-5405 38640 CLAIX
Text: SALES REPRESENTATIVES UNITED STATES SALES OFFICES WESTERN AREA Headquarters, Sales Cirrus Logic, Inc. 3100 West Warren Ave. Fremont, CA 94538 Ph: 510-623-8300 FAX: 510-252-6020 Southern California, Sales Westlake Village The Townsgate Executive Bldg. 2659 Townsgate Road,
|
Original
|
PDF
|
|
g28 SOT23
Abstract: weston 461 st 95160 9418 transistor TO-92 9742 9943 so-8 9418 transistor 9806 9928 f56 dd pack m
Text: CONTENTS October 2000 OPERATING LIFE TEST SUMMARY . 2 HAST . 3 AUTOCLAVE TEST . 4
|
Original
|
PDF
|
S-191
g28 SOT23
weston 461
st 95160
9418 transistor TO-92
9742
9943 so-8
9418 transistor
9806
9928 f56
dd pack m
|
6R130G
Abstract: R601
Text: _ _ _ _ 6RI 30E-060/080 POW ER DIODE M O DULE "ST 6-Pack Diode • Outline Drawings Features • All the term inals and the m ounting plate are electrically isolated. These modules can be installed in the same cooling fin as other modules, thus saving installation
|
OCR Scan
|
PDF
|
6RI30E-060/080
6003Z0V
30E-060/080
6R130G
R601
|
502-HJ
Abstract: 3R3TI30E-080
Text: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t
|
OCR Scan
|
PDF
|
3R3TI30E-080
50/60HzjE3Â
502-HJ
3R3TI30E-080
|
ERD36M
Abstract: H150
Text: E R D 3 6 M 4 A FA ST RECO VERY DIODE : Features Insulated package by fully molding Super high speed sw itching • 9 —> i r > W Low V f in turn on • « « « * « : 1*9 8B*£iM! • Aimtk Connection Diagram High reliability : Applications High speed sw itchin g.
|
OCR Scan
|
PDF
|
ERD36M
SC-67Â
H150
|
ESAD33
Abstract: H150 SC-65
Text: ESAD33 CS (2oa) *±'j FA ST RECOVERY DIODE • 9 $ # : Features Soft recovery, low noise. • A f f & ii H igh reliability C onnection D iagram ■ E I i£ : A p p lic a tio n s High speed pow er sw itchin g. M a xim u m Ratings and C haracteristics : A bsolute M axim um Ratings
|
OCR Scan
|
PDF
|
ESAD33
H150
SC-65
|